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Acta Physica Sinica (Overseas Edition), 1995, Vol. 4(12): 923-932    DOI: 10.1088/1004-423X/4/12/007
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev  

THEORETICAL AND EXPERIMENTAL INVESTIGATION ON ANOMALOUS HALL EFFECT OF HETEROGENOUS SEMICONDUCTOR SAMPLES

JIANG WEI (姜伟), Lu Gang (鲁刚), Song Lu-wu (宋录武)
Department of Fundamental Courses, Liaoyang Petrochemical Engineering College, Liaoyang 111003, China
Abstract  Based on the theoretical results of inversion layers model and interpenetrating network model, we studied the anomalous Hall effect of heterogenous semiconductor samples, and obtained the following results: (1) the wider the sample energy gap, the higher the temper-ature at which anomalous Hall effect begins to appear; (2) the lower the sample resistivity, the higher the temperature at which anomalous Hall effect begins to appear, which is further verified in our experiment; (3) mobility is the main factor which determines what role p-n junction plays in sample Hall voltage; (4) for n-Ge sample with inversion layers structure, with the increase of p-type region, the Hall effect changes from normal n-type Hall effect to anomalous Hall effect of the single dip type, then to anomalous Hall effect of the second reversal type.
Received:  09 December 1994      Accepted manuscript online: 
PACS:  72.20.My (Galvanomagnetic and other magnetotransport effects)  
  71.20.Nr (Semiconductor compounds)  
  72.80.Ey (III-V and II-VI semiconductors)  

Cite this article: 

JIANG WEI (姜伟), Lu Gang (鲁刚), Song Lu-wu (宋录武) THEORETICAL AND EXPERIMENTAL INVESTIGATION ON ANOMALOUS HALL EFFECT OF HETEROGENOUS SEMICONDUCTOR SAMPLES 1995 Acta Physica Sinica (Overseas Edition) 4 923

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