Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor

doi:10.1088/1674-1056/27/10/104207

中国物理B ›› 2018, Vol. 27 ›› Issue (10): 104207-104207.doi: 10.1088/1674-1056/27/10/104207

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor

Lin-Dong Ma(马林东), Yu-Dong Li(李豫东), Lin Wen(文林), Jie Feng(冯婕), Xiang Zhang(张翔), Tian-Hui Wang(王田珲), Yu-Long Cai(蔡毓龙), Zhi-Ming Wang(王志铭), Qi Guo(郭旗)

1 Key Laboratory of Functional Materials and Devices for Special Environments of Chinese Academy of Sciences, Xinjiang Technical Institute of Physics & Chemistry, Urumqi 830011, China;
2 Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2018-04-28 修回日期:2018-05-24 出版日期:2018-10-05 发布日期:2018-10-05
通讯作者: Qi Guo E-mail:guoqi@ms.xjb.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 11675259) and the West Light Foundation of the Chinese Academy of Sciences (Grant Nos. 2016-QNXZ-B-8 and 2016-QNXZ-B-2).

Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor

Lin-Dong Ma(马林东)^1,2,3, Yu-Dong Li(李豫东)^1,2, Lin Wen(文林)^1,2, Jie Feng(冯婕)^1,2, Xiang Zhang(张翔)^1,2,3, Tian-Hui Wang(王田珲)^1,2,3, Yu-Long Cai(蔡毓龙)^1,2,3, Zhi-Ming Wang(王志铭)^1,2,3, Qi Guo(郭旗)^1,2

1 Key Laboratory of Functional Materials and Devices for Special Environments of Chinese Academy of Sciences, Xinjiang Technical Institute of Physics & Chemistry, Urumqi 830011, China;
2 Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China

Received:2018-04-28 Revised:2018-05-24 Online:2018-10-05 Published:2018-10-05
Contact: Qi Guo E-mail:guoqi@ms.xjb.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 11675259) and the West Light Foundation of the Chinese Academy of Sciences (Grant Nos. 2016-QNXZ-B-8 and 2016-QNXZ-B-2).

摘要/Abstract

摘要：

A pinned photodiode complementary metal-oxide-semiconductor transistor (CMOS) active pixel sensor is exposed to ⁶⁰Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of 50 rad (SiO₂)/s and a total dose of 100 krad (SiO₂), and the photodiode is kept unbiased. The degradation of dark current, full well capacity, and quantum efficiency induced by the total ionizing dose damage effect are investigated. It is found that the dark current increases mainly from the shallow trench isolation (STI) surrounding the pinned photodiode. Further results suggests that the decreasing of full well capacity due to the increase in the density, is induced by the total ionizing dose (TID) effect, of the trap interface, which also leads to the degradation of quantum efficiency at shorter wavelengths.

关键词: CMOS active pixel sensor, dark current, quantum efficiency

Abstract:

Key words: CMOS active pixel sensor, dark current, quantum efficiency

中图分类号: (Environmental and radiation effects on optical elements, devices, and systems)

42.88.+h

85.60.Dw (Photodiodes; phototransistors; photoresistors) 42.50.-p (Quantum optics)

马林东, 李豫东, 文林, 冯婕, 张翔, 王田珲, 蔡毓龙, 王志铭, 郭旗. Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor[J]. 中国物理B, 2018, 27(10): 104207-104207.

Lin-Dong Ma(马林东), Yu-Dong Li(李豫东), Lin Wen(文林), Jie Feng(冯婕), Xiang Zhang(张翔), Tian-Hui Wang(王田珲), Yu-Long Cai(蔡毓龙), Zhi-Ming Wang(王志铭), Qi Guo(郭旗). Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor[J]. Chin. Phys. B, 2018, 27(10): 104207-104207.

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Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor

Total ionizing dose effects in pinned photodiode complementary metal-oxide-semiconductor transistor active pixel sensor

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