The optimal thickness of transmission-mode GaN photocathode

doi:10.1088/1674-1056/21/8/087901

中国物理B ›› 2012, Vol. 21 ›› Issue (8): 87901-087901.doi: 10.1088/1674-1056/21/8/087901

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

The optimal thickness of transmission-mode GaN photocathode

王晓晖^{a b}, 石峰^a, 郭晖^a, 胡仓陆^a, 程宏昌^a, 常本康^b, 任玲^b, 杜玉杰^{b c}, 张俊举^b

a Science and Technology on Low-Light-Level Night Vision Laboratory, Xi'an 710065, China;
b Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;
c Department of Physics, Institute of Binzhou, Binzhou 256603, China

收稿日期:2011-12-16 修回日期:2012-02-27 出版日期:2012-07-01 发布日期:2012-07-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 60871012), and the National Key Laboratory of Science and Technology Foundation on Low-Light-Level Night Vision, China (Grant No. J20110104), and the Research and Innovation Plan for Graduate Students of Jiangsu Higher Education Institutions (Grant No. CXZZ11₀238).

The optimal thickness of transmission-mode GaN photocathode

Wang Xiao-Hui (王晓晖)^{a b}, Shi Feng (石峰)^a, Guo Hui (郭晖)^a, Hu Cang-Lu (胡仓陆)^a, Cheng Hong-Chang (程宏昌)^a, Chang Ben-Kang (常本康)^b, Ren Ling (任玲)^b, Du Yu-Jie (杜玉杰)^{b c}, Zhang Jun-Ju (张俊举 )^b

a Science and Technology on Low-Light-Level Night Vision Laboratory, Xi'an 710065, China;
b Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China;
c Department of Physics, Institute of Binzhou, Binzhou 256603, China

Received:2011-12-16 Revised:2012-02-27 Online:2012-07-01 Published:2012-07-01
Contact: Chang Ben-Kang E-mail:bkchang@njust.mail.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60871012), and the National Key Laboratory of Science and Technology Foundation on Low-Light-Level Night Vision, China (Grant No. J20110104), and the Research and Innovation Plan for Graduate Students of Jiangsu Higher Education Institutions (Grant No. CXZZ11₀238).

摘要/Abstract

摘要： A 150-nm-thick GaN photocathode with an Mg doping concentration of 1.6× 10¹⁷cm^-3 is activated by Cs/O in ultrahigh vacuum chamber, and quantum efficiency (QE) curve of negative electron affinity transmission-mode (t-mode) GaN photocathode is obtained. The maximum QE reaches 13.0% at 290 nm. According to the t-mode QE equation solved from the diffusion equation, the QE curve is fitted. From the fitting results, the electron escape probability is 0.32, the back-interface recombination velocity is 5× 10⁴ cm·s^-1, and the electron diffusion length is 116 nm. Based on these parameters, the influence of GaN thickness on t-mode QE is simulated. The simulation shows that the optimal thickness of GaN is 90 nm, which is better than the 150-nm GaN.

关键词: gallium nitride, transmission-mode, quantum efficiency, optimal thickness

Abstract: A 150-nm-thick GaN photocathode with an Mg doping concentration of 1.6× 10¹⁷cm^-3 is activated by Cs/O in ultrahigh vacuum chamber, and quantum efficiency (QE) curve of negative electron affinity transmission-mode (t-mode) GaN photocathode is obtained. The maximum QE reaches 13.0% at 290 nm. According to the t-mode QE equation solved from the diffusion equation, the QE curve is fitted. From the fitting results, the electron escape probability is 0.32, the back-interface recombination velocity is 5× 10⁴ cm·s^-1, and the electron diffusion length is 116 nm. Based on these parameters, the influence of GaN thickness on t-mode QE is simulated. The simulation shows that the optimal thickness of GaN is 90 nm, which is better than the 150-nm GaN.

Key words: gallium nitride, transmission-mode, quantum efficiency, optimal thickness

中图分类号: (Photoemission and photoelectron spectra)

79.60.-i

72.80.-r (Conductivity of specific materials) 73.20.-r (Electron states at surfaces and interfaces) 73.61.-r (Electrical properties of specific thin films)

王晓晖, 石峰, 郭晖, 胡仓陆, 程宏昌, 常本康, 任玲, 杜玉杰, 张俊举 . The optimal thickness of transmission-mode GaN photocathode[J]. 中国物理B, 2012, 21(8): 87901-087901.

Wang Xiao-Hui (王晓晖), Shi Feng (石峰), Guo Hui (郭晖), Hu Cang-Lu (胡仓陆), Cheng Hong-Chang (程宏昌), Chang Ben-Kang (常本康), Ren Ling (任玲), Du Yu-Jie (杜玉杰), Zhang Jun-Ju (张俊举 ). The optimal thickness of transmission-mode GaN photocathode[J]. Chin. Phys. B, 2012, 21(8): 87901-087901.

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The optimal thickness of transmission-mode GaN photocathode

The optimal thickness of transmission-mode GaN photocathode

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