Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells

doi:10.1088/1674-1056/23/6/068801

中国物理B ›› 2014, Vol. 23 ›› Issue (6): 68801-068801.doi: 10.1088/1674-1056/23/6/068801

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells

杨静^a, 赵德刚^a, 江德生^a, 刘宗顺^a, 陈平^a, 李亮^a, 吴亮亮^a, 乐伶聪^a, 李晓静^a, 何晓光^b, 王辉^b, 朱建军^b, 张书明^b, 张宝顺^b, 杨辉^{a b}

a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

收稿日期:2013-08-27 修回日期:2013-11-09 出版日期:2014-06-15 发布日期:2014-06-15
基金资助:
Project supported by the National Natural Science Fundation for Distinguished Young Scholars, China (Grant No. 60925017), the National Natural Science Foundation of China (Grant Nos. 61223005, 10990100, and 61176126), and the Tsinghua National Laboratory for Information Science and Technology Cross-Discipline Foundation, China.

Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells

Yang Jing (杨静)^a, Zhao De-Gang (赵德刚)^a, Jiang De-Sheng (江德生)^a, Liu Zong-Shun (刘宗顺)^a, Chen Ping (陈平)^a, Li Liang (李亮)^a, Wu Liang-Liang (吴亮亮)^a, Le Ling-Cong (乐伶聪)^a, Li Xiao-Jing (李晓静)^a, He Xiao-Guang (何晓光)^b, Wang Hui (王辉)^b, Zhu Jian-Jun (朱建军)^b, Zhang Shu-Ming (张书明)^b, Zhang Bao-Shun (张宝顺)^b, Yang Hui (杨辉)^{a b}

a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

Received:2013-08-27 Revised:2013-11-09 Online:2014-06-15 Published:2014-06-15
Contact: Zhao De-Gang E-mail:dgzhao@red.semi.ac.cn
Supported by:
Project supported by the National Natural Science Fundation for Distinguished Young Scholars, China (Grant No. 60925017), the National Natural Science Foundation of China (Grant Nos. 61223005, 10990100, and 61176126), and the Tsinghua National Laboratory for Information Science and Technology Cross-Discipline Foundation, China.

摘要/Abstract

摘要： Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well (MQW) solar cells are investigated. It is found that due to the reduction of piezoelectric polarization and the enhancement of tunneling transport of photo-generated carriers in MQWs, the external quantum efficiency (EQE) of the solar cells increases in a low energy spectral range (λ >370 nm) when the barrier thickness value decreases from 15 nm to 7.5 nm. But the EQE decreases abruptly when the barrier thickness value decreases down to 3.75 nm. The reasons for these experimental results are analyzed. We are aware that the reduction of depletion width in MQW region, caused by the high resistivity of the p-type GaN layer may be the main reason for the abnormally low EQE value at long wavelengths (λ >370 nm).

关键词: nitride materials, external quantum efficiency, polarization, p-type GaN resistivity

Abstract: Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well (MQW) solar cells are investigated. It is found that due to the reduction of piezoelectric polarization and the enhancement of tunneling transport of photo-generated carriers in MQWs, the external quantum efficiency (EQE) of the solar cells increases in a low energy spectral range (λ >370 nm) when the barrier thickness value decreases from 15 nm to 7.5 nm. But the EQE decreases abruptly when the barrier thickness value decreases down to 3.75 nm. The reasons for these experimental results are analyzed. We are aware that the reduction of depletion width in MQW region, caused by the high resistivity of the p-type GaN layer may be the main reason for the abnormally low EQE value at long wavelengths (λ >370 nm).

Key words: nitride materials, external quantum efficiency, polarization, p-type GaN resistivity

中图分类号: (Efficiency and performance of solar cells)

88.40.hj

81.05.Ea (III-V semiconductors) 78.40.Fy (Semiconductors)

杨静, 赵德刚, 江德生, 刘宗顺, 陈平, 李亮, 吴亮亮, 乐伶聪, 李晓静, 何晓光, 王辉, 朱建军, 张书明, 张宝顺, 杨辉. Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells[J]. 中国物理B, 2014, 23(6): 68801-068801.

Yang Jing (杨静), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Liu Zong-Shun (刘宗顺), Chen Ping (陈平), Li Liang (李亮), Wu Liang-Liang (吴亮亮), Le Ling-Cong (乐伶聪), Li Xiao-Jing (李晓静), He Xiao-Guang (何晓光), Wang Hui (王辉), Zhu Jian-Jun (朱建军), Zhang Shu-Ming (张书明), Zhang Bao-Shun (张宝顺), Yang Hui (杨辉). Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells[J]. Chin. Phys. B, 2014, 23(6): 68801-068801.

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Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells

Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells

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