InP quantum dots-based electroluminescent devices

doi:10.1088/1674-1056/ab4cdb

中国物理B ›› 2019, Vol. 28 ›› Issue (11): 118103-118103.doi: 10.1088/1674-1056/ab4cdb

所属专题： TOPICAL REVIEW — Quantum dot displays

• TOPICAL REVIEW—Quantum dot displays • 上一篇下一篇

InP quantum dots-based electroluminescent devices

Qianqian Wu(吴倩倩), Fan Cao(曹璠), Lingmei Kong(孔令媚), Xuyong Yang(杨绪勇)

1 School of Material Science and Engineering, Shanghai University, Shanghai 200072, China;
2 Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, China

收稿日期:2019-08-20 修回日期:2019-09-10 出版日期:2019-11-05 发布日期:2019-11-05
通讯作者: Xuyong Yang E-mail:yangxy@shu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51675322, 61605109, and 61735004), the National Key Research and Development Program of China (Grant No. 2016YFB0401702), Shanghai Science and Technology Committee, China (Grant No. 19010500600), Shanghai Rising-Star Program, China (Grant No. 17QA1401600), and the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning, China.

InP quantum dots-based electroluminescent devices

Qianqian Wu(吴倩倩)^1,2, Fan Cao(曹璠)², Lingmei Kong(孔令媚)^1,2, Xuyong Yang(杨绪勇)²

1 School of Material Science and Engineering, Shanghai University, Shanghai 200072, China;
2 Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, China

Received:2019-08-20 Revised:2019-09-10 Online:2019-11-05 Published:2019-11-05
Contact: Xuyong Yang E-mail:yangxy@shu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51675322, 61605109, and 61735004), the National Key Research and Development Program of China (Grant No. 2016YFB0401702), Shanghai Science and Technology Committee, China (Grant No. 19010500600), Shanghai Rising-Star Program, China (Grant No. 17QA1401600), and the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning, China.

摘要/Abstract

摘要： Indium phosphide (InP) quantum dots (QDs) have shown great potential to replace the widely applied toxic cadmium-containing and lead perovskite QDs due to their similar emission wavelength range and emission peak width but without intrinsic toxicity. Recently, electrically driven red and green InP-based quantum-dot light-emitting diodes (QLEDs) have achieved great progress in external quantum efficiency (EQE), reaching up to 12.2% and 6.3%, respectively. Despite the relatively poor device performance comparing with cadmium selenide (CdSe)-and perovskite-based QLEDs, these encouraging facts with unique environmental friendliness and solution-processability foreshadow the enormous potential of InP-based QLEDs for energy-efficient, high-color-quality thin-film display and solid-state lighting applications. In this article, recent advances in the research of the InP-based QLEDs have been discussed, with the main focus on device structure selection and interface research, as well as our outlook for on-going strategies of high-efficiency InP-based QLEDs.

关键词: indium phosphide, quantum dots, light-emitting diodes, external quantum efficiency

Abstract: Indium phosphide (InP) quantum dots (QDs) have shown great potential to replace the widely applied toxic cadmium-containing and lead perovskite QDs due to their similar emission wavelength range and emission peak width but without intrinsic toxicity. Recently, electrically driven red and green InP-based quantum-dot light-emitting diodes (QLEDs) have achieved great progress in external quantum efficiency (EQE), reaching up to 12.2% and 6.3%, respectively. Despite the relatively poor device performance comparing with cadmium selenide (CdSe)-and perovskite-based QLEDs, these encouraging facts with unique environmental friendliness and solution-processability foreshadow the enormous potential of InP-based QLEDs for energy-efficient, high-color-quality thin-film display and solid-state lighting applications. In this article, recent advances in the research of the InP-based QLEDs have been discussed, with the main focus on device structure selection and interface research, as well as our outlook for on-going strategies of high-efficiency InP-based QLEDs.

Key words: indium phosphide, quantum dots, light-emitting diodes, external quantum efficiency

中图分类号: (Quantum dots)

81.07.Ta

85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.)) 85.30.De (Semiconductor-device characterization, design, and modeling)

吴倩倩, 曹璠, 孔令媚, 杨绪勇. InP quantum dots-based electroluminescent devices[J]. 中国物理B, 2019, 28(11): 118103-118103.

Qianqian Wu(吴倩倩), Fan Cao(曹璠), Lingmei Kong(孔令媚), Xuyong Yang(杨绪勇). InP quantum dots-based electroluminescent devices[J]. Chin. Phys. B, 2019, 28(11): 118103-118103.

参考文献 43

[34]	Kim J H, Han C Y, Lee K H, An K S, Song W, Kim J, Oh M S, Do Y R and Yang H 2014 Chem. Mater. 27 197
[1]	Cho K S, Lee E K, Joo W J, Jang E, Kim T H, Lee S J, Kwon S J, Han J Y, Kim B K, Choi B L and Kim J M 2009 Nat. Photon. 3 341 doi: 10.1038/nphoton.2009.92
[35]	Cao F, Wang S, Wang F, Wu Q, Zhao D and Yang X 2018 Chem. Mater. 30 8002 doi: 10.1021/acs.chemmater.8b03671
[2]	Wang C, Shim M and Guyot-Sionnest P 2001 Science 291 2390 doi: 10.1126/science.291.5512.2390
[36]	Small C E, Tsang S W, Kido J, So S K and So F 2012 Adv. Funct. Mater. 22 3261 doi: 10.1002/adfm.201200185
[3]	Qian L, Zheng Y, Xue J and Holloway P H 2011 Nat. Photon. 5 543 doi: 10.1038/nphoton.2011.171
[37]	Kirkwood N, Singh B and Mulvaney P 2016 Adv. Mater. Interfaces 3 1600868 doi: 10.1002/admi.201600868
[4]	Shirasaki Y, Supran G J, Bawendi M G and Bulović V 2013 Nat. Photon. 7 13 doi: 10.1038/nphoton.2012.328
[38]	Yuan G, Gomez D E, Kirkwood N, Boldt K and Mulvaney P 2018 ACS Nano 12 3397 doi: 10.1021/acsnano.7b09052
[5]	Mashford B S, Stevenson M, Popovic Z, Hamilton C, Zhou Z, Breen C, Steckel J, Bulovic V, Bawendi M, Coe-Sullivan S and Kazlas P T 2013 Nat. Photon. 7 407 doi: 10.1038/nphoton.2013.70
[39]	Kim Y, Ippen C, Fischer B, Lange A and Wedel A 2015 J. Soc. Inf. Disp. 23 377 doi: 10.1002/jsid.322
[6]	Dai X, Zhang Z, Jin Y, Niu Y, Cao H, Liang X, Chen L, Wang J and Peng X 2014 Nature 515 96 doi: 10.1038/nature13829
[40]	Kim D, Fu Y, Kim S, Lee W, Lee K H, Chung H K, Lee H J, Yang H and Chae H 2017 ACS Nano 11 1982 doi: 10.1021/acsnano.6b08142
[7]	Shen H, Gao Q, Zhang Y, Lin Y, Lin Q, Li Z, Chen L, Zeng Z, Li X, Jia Y, Wang S, Du Z, Li L S and Zhang Z 2019 Nat. Photon. 13 192 doi: 10.1038/s41566-019-0364-z
[41]	Wu H, Huang F, Peng J and Cao Y 2005 Org. Electron. 6 118 doi: 10.1016/j.orgel.2005.03.009
[8]	Lin K, Xing J, Quan L N, de Arquer F P G, Gong X, Lu J, Xie L, Zhao W, Zhang D, Yan C, Li W, Liu X, Lu Y, Kirman J, Sargent E H, Xiong Q and Wei Z 2018 Nature 562 245 doi: 10.1038/s41586-018-0575-3
[42]	Wang H C, Zhang H, Chen H Y, Yeh H C, Tseng M R, Chung R J, Chen S and Liu R S 2017 Small 13 1603962 doi: 10.1002/smll.201603962
[9]	Walters G, Wei M, Voznyy O, Quintero-Bermudez R, Kiani A, Smilgies D M, Munir R, Amassian A, Hoogl S and Sargent E 2018 Nat. Commun. 9 4214 doi: 10.1038/s41467-018-06746-5
[43]	Hahm D, Chang J H, Jeong B G, Park P, Kim J, Lee S, Choi J, Kim W D, Rhee S, Lim J, Lee D C, Lee C, Char K and Bae W K 2019 Chem. Mater. 31 3476 doi: 10.1021/acs.chemmater.9b00740
[10]	Supran G J, Shirasaki Y, Song, K W, Caruge J M, Kazlas P T, Coe-Sullivan S, Andrew T L, Bawendi M G and Bulović V 2013 MRS Bull. 38 703 doi: 10.1557/mrs.2013.181
[11]	Zheng J J, Wang Y R, Yu K H, Xu X X, Sheng X X, Hu E T and Wei W 2018 Acta Phys. Sin. 67 118502(in Chinese)
[12]	Anc M J, Pickett N L, Gresty N C, Harris J A and Mishra K C 2013 ECS J. Solid State Sci. Technol. 2 R3071
[13]	Derfus A M, Chan W C and Bhatia S N 2004 Nano Lett. 4 11 doi: 10.1021/nl0347334
[14]	Hardman R 2006 Environ. Health Perspect. 114 165 doi: 10.1289/ehp.8284
[15]	Luo S, Ji H M, Gao F, Yang X G, Liang P, Zhao L J and Yang T 2013 Chin. Phys. Lett. 30 068101 doi: 10.1088/0256-307X/30/6/068101
[16]	Yang G Q, Zhang S Z, Xu B, Chen Y H and Wang Z G 2017 Chin. Phys. B 26 068103 doi: 10.1088/1674-1056/26/6/068103
[17]	Tamang S, Lincheneau C, Hermans Y, Jeong S and Reiss P 2016 Chem. Mater. 28 2491 doi: 10.1021/acs.chemmater.5b05044
[18]	Battaglia D and Peng X 2002 Nano Lett. 2 1027 doi: 10.1021/nl025687v
[19]	Byun H J, Song W S and Yang H 2011 Nanotechnology 22 235605 doi: 10.1088/0957-4484/22/23/235605
[20]	Ramasamy P, Kim N, Kang Y S, Ramirez O and Lee J S 2017 Chem. Mater. 29 6893 doi: 10.1021/acs.chemmater.7b02204
[21]	Buffard A, Dreyfuss S, Nadal B, Heuclin H, Xu X, Patriarche G, Mézailles N and Dubertret B 2016 Chem. Mater. 28 5925 doi: 10.1021/acs.chemmater.6b02456
[22]	Li Y, Hou X, Dai X, Yao Z, Lv L, Jin Y and Peng X 2019 J. Am. Chem. Soc. 141 6448 doi: 10.1021/jacs.8b12908
[23]	Lim J, Park M, Bae W K, Lee D, Lee S, Lee C and Char K 2013 ACS Nano 7 9019 doi: 10.1021/nn403594j
[24]	Ramasamy P, Ko K J, Kang J W and Lee J S 2018 Chem. Mater. 30 3643 doi: 10.1021/acs.chemmater.8b02049
[25]	Kim H Y, Park Y J, Kim J, Han C J, Lee J, Kim Y, Greco T, Ippen C, Wedel A, Ju B K and Oh M S 2016 Adv. Funct. Mater. 26 3454 doi: 10.1002/adfm.201505549
[26]	Cheng T, Wang Z, Jin S, Wang F, Bai Y, Feng H, You B, Li Y, Hayat T and Tan Z A 2017 Adv. Opt. Mater. 5 1700035 doi: 10.1002/adom.201700035
[27]	Yang X, Zhao D, Leck K S, Tan S T, Tang Y X, Zhao J, Demir H V and Sun X W 2012 Adv. Mater. 24 4180 doi: 10.1002/adma.201104990
[28]	Yang X, Divayana Y, Zhao D, Leck K S, Lu F, Tan S T, Abiyasa A P, Zhao Y, Demir H V and Sun X W 2012 Appl. Phys. Lett. 101 233110 doi: 10.1063/1.4769347
[29]	Zhang H, Hu N, Zeng Z, Lin Q, Zhang F, Tang A, Jia Y, Li L S, Shen H, Teng F and Du Z 2019 Adv. Opt. Mater. 7 1801602 doi: 10.1002/adom.201801602
[30]	Yang Y, Zheng Y, Cao W, Titov A, Hyvonen J, Manders J R, Xue J, Holloway P H and Qian L 2015 Nat. Photon. 9 259 doi: 10.1038/nphoton.2015.36
[31]	Ho M D, Kim D, Kim N, Cho S M and Chae H 2013 ACS Appl. Mater. Interfaces 5 12369 doi: 10.1021/am403173n
[32]	Jo J H, Kim J H, Lee K H, Han C Y, Jang E P, Do Y R and Yang H 2016 Opt. Lett. 41 3984 doi: 10.1364/OL.41.003984
[33]	Van Dijken A, Meulenkamp E A, Vanmaekelbergh D and Meijerink A 2000 J. Phys. Chem. B 104 1715
[34]	Kim J H, Han C Y, Lee K H, An K S, Song W, Kim J, Oh M S, Do Y R and Yang H 2014 Chem. Mater. 27 197
[35]	Cao F, Wang S, Wang F, Wu Q, Zhao D and Yang X 2018 Chem. Mater. 30 8002 doi: 10.1021/acs.chemmater.8b03671
[36]	Small C E, Tsang S W, Kido J, So S K and So F 2012 Adv. Funct. Mater. 22 3261 doi: 10.1002/adfm.201200185
[37]	Kirkwood N, Singh B and Mulvaney P 2016 Adv. Mater. Interfaces 3 1600868 doi: 10.1002/admi.201600868
[38]	Yuan G, Gomez D E, Kirkwood N, Boldt K and Mulvaney P 2018 ACS Nano 12 3397 doi: 10.1021/acsnano.7b09052
[39]	Kim Y, Ippen C, Fischer B, Lange A and Wedel A 2015 J. Soc. Inf. Disp. 23 377 doi: 10.1002/jsid.322
[40]	Kim D, Fu Y, Kim S, Lee W, Lee K H, Chung H K, Lee H J, Yang H and Chae H 2017 ACS Nano 11 1982 doi: 10.1021/acsnano.6b08142
[41]	Wu H, Huang F, Peng J and Cao Y 2005 Org. Electron. 6 118 doi: 10.1016/j.orgel.2005.03.009
[42]	Wang H C, Zhang H, Chen H Y, Yeh H C, Tseng M R, Chung R J, Chen S and Liu R S 2017 Small 13 1603962 doi: 10.1002/smll.201603962
[43]	Hahm D, Chang J H, Jeong B G, Park P, Kim J, Lee S, Choi J, Kim W D, Rhee S, Lim J, Lee D C, Lee C, Char K and Bae W K 2019 Chem. Mater. 31 3476 doi: 10.1021/acs.chemmater.9b00740

InP quantum dots-based electroluminescent devices

InP quantum dots-based electroluminescent devices

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 43

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Jingyuan Lu(陆静远), Chunfeng Cui(崔春凤), Tao Ouyang(欧阳滔), Jin Li(李金), Chaoyu He(何朝宇), Chao Tang(唐超), and Jianxin Zhong(钟建新). Adaptive genetic algorithm-based design of gamma-graphyne nanoribbon incorporating diamond-shaped segment with high thermoelectric conversion efficiency[J]. 中国物理B, 2023, 32(4): 48401-048401.
[2]	Peng Du(杜鹏), Yining Mu(母一宁), Hang Ren(任航), Idelfonso Tafur Monroy, Yan-Zheng Li(李彦正), Hai-Bo Fan(樊海波), Shuai Wang(王帅), Makram Ibrahim, and Dong Liang(梁栋). Electron beam pumping improves the conversion efficiency of low-frequency photons radiated by perovskite quantum dots[J]. 中国物理B, 2023, 32(4): 48704-048704.
[3]	Cong Wang(王聪) and Xiao-Qi Wang(王晓琦). Thermoelectric signature of Majorana zero modes in a T-typed double-quantum-dot structure[J]. 中国物理B, 2023, 32(3): 37304-037304.
[4]	Yi-Ming Duan(段一名) and Xue-Chao Li(李学超). Nonlinear optical rectification of GaAs/Ga_1-xAl_xAs quantum dots with Hulthén plus Hellmann confining potential[J]. 中国物理B, 2023, 32(1): 17303-017303.
[5]	Yuhui Dong(董宇辉), Danni Yan(严丹妮), Shuai Yang(杨帅), Naiwei Wei(魏乃炜),Yousheng Zou(邹友生), and Haibo Zeng(曾海波). Ion migration in metal halide perovskite QLEDs and its inhibition[J]. 中国物理B, 2023, 32(1): 18507-018507.
[6]	Qian-Qian Gong(宫倩倩), Yun-Long Zhao(赵云龙), Qi Zhang(张奇), Chun-Yong Hu(胡春永), Teng-Fei Liu(刘腾飞), Hai-Feng Zhang(张海峰), Guang-Chao Yin(尹广超)^†, and Mei-Ling Sun(孙美玲)^‡. High-quality CdS quantum dots sensitized ZnO nanotube array films for superior photoelectrochemical performance[J]. 中国物理B, 2022, 31(9): 98103-098103.
[7]	Yi-Ming Liu(刘一铭) and Jian-Hua Wei(魏建华). Large Seebeck coefficient resulting from chiral interactions in triangular triple quantum dots[J]. 中国物理B, 2022, 31(9): 97201-097201.
[8]	Yi-Jie Wang(王一杰) and Jian-Hua Wei(魏建华). Dynamic transport characteristics of side-coupled double-quantum-impurity systems[J]. 中国物理B, 2022, 31(9): 97305-097305.
[9]	Heng Yao(姚恒), Anjiang Lu(陆安江), Zhongchen Bai(白忠臣), Jinguo Jiang(蒋劲国), and Shuijie Qin(秦水介). Stability and luminescence properties of CsPbBr₃/CdSe/Al core-shell quantum dots[J]. 中国物理B, 2022, 31(4): 46106-046106.
[10]	Le-Tian Zhu(朱乐天), Tao Tu(涂涛), Ao-Lin Guo(郭奥林), and Chuan-Feng Li(李传锋). High-fidelity quantum sensing of magnon excitations with a single electron spin in quantum dots[J]. 中国物理B, 2022, 31(12): 120302-120302.
[11]	Junhui Huang(黄君辉), Hao Chen(陈昊), Zhiyao Zhuo(卓志瑶), Jian Wang(王健), Shulun Li(李叔伦), Kun Ding(丁琨), Haiqiao Ni(倪海桥), Zhichuan Niu(牛智川), Desheng Jiang(江德生), Xiuming Dou(窦秀明), and Baoquan Sun(孙宝权). Exciton emission dynamics in single InAs/GaAs quantum dots due to the existence of plasmon-field-induced metastable states in the wetting layer[J]. 中国物理B, 2021, 30(9): 97805-097805.
[12]	Hongyu Ma(马宏宇), Kewei Liu(刘可为), Zhen Cheng(程祯), Zhiyao Zheng(郑智遥), Yinzhe Liu(刘寅哲), Peixuan Zhang(张培宣), Xing Chen(陈星), Deming Liu(刘德明), Lei Liu(刘雷), and Dezhen Shen(申德振). Effect of surface oxygen vacancy defects on the performance of ZnO quantum dots ultraviolet photodetector[J]. 中国物理B, 2021, 30(8): 87303-087303.
[13]	Hang Su(苏杭), Kun Zhu(朱坤), Jing Qin(钦敬), Mengyao Li(李梦瑶), Yulin Zuo(左郁琳), Yunzheng Wang(王允正), Yinggang Wu(吴迎港), Jiawei Cao(曹佳维), and Guolong Li(李国龙). Large-area fabrication: The next target of perovskite light-emitting diodes[J]. 中国物理B, 2021, 30(8): 88502-088502.
[14]	Fu-Bin Yang(羊富彬), Gan Ren(任淦), and Lin-Guo Xie(谢林果). Phase- and spin-dependent manipulation of leakage of Majorana mode into double quantum dot[J]. 中国物理B, 2021, 30(7): 78505-078505.
[15]	Wei-Jiang Gong(公卫江), Yu-Hang Xue(薛宇航), Xiao-Qi Wang(王晓琦), Lian-Lian Zhang(张莲莲), and Guang-Yu Yi(易光宇). Suppression of leakage effect of Majorana bound states in the T-shaped quantum-dot structure[J]. 中国物理B, 2021, 30(7): 77307-077307.