Scalability of dark current in silicon PIN photodiode

doi:10.1088/1674-1056/27/4/048501

中国物理B ›› 2018, Vol. 27 ›› Issue (4): 48501-048501.doi: 10.1088/1674-1056/27/4/048501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Scalability of dark current in silicon PIN photodiode

Ya-Jie Feng(丰亚洁), Chong Li(李冲), Qiao-Li Liu(刘巧莉), Hua-Qiang Wang(王华强), An-Qi Hu(胡安琪), Xiao-Ying He(何晓颖), Xia Guo(郭霞)

1. School of Electronic Engineering, State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing Key Laboratory of Work Safety Intelligent Monitoring, Beijing 100876, China;
2. Department of Information, Beijing University of Technology, Beijing 100124, China

收稿日期:2017-07-31 修回日期:2018-01-11 出版日期:2018-04-05 发布日期:2018-04-05
通讯作者: Xiao-Ying He, Xia Guo E-mail:xyhe@bjut.edu.cn;guox@bupt.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFF0104801) and the National Natural Science Foundation of China (Grant Nos. 61335004, 61675046, and 61505003).

Scalability of dark current in silicon PIN photodiode

Ya-Jie Feng(丰亚洁)^1,2, Chong Li(李冲)², Qiao-Li Liu(刘巧莉)², Hua-Qiang Wang(王华强)², An-Qi Hu(胡安琪)¹, Xiao-Ying He(何晓颖)², Xia Guo(郭霞)¹

1. School of Electronic Engineering, State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing Key Laboratory of Work Safety Intelligent Monitoring, Beijing 100876, China;
2. Department of Information, Beijing University of Technology, Beijing 100124, China

Received:2017-07-31 Revised:2018-01-11 Online:2018-04-05 Published:2018-04-05
Contact: Xiao-Ying He, Xia Guo E-mail:xyhe@bjut.edu.cn;guox@bupt.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2017YFF0104801) and the National Natural Science Foundation of China (Grant Nos. 61335004, 61675046, and 61505003).

摘要/Abstract

摘要： The mechanism for electrical conduction is investigated by the dark temperature-dependent current-voltage characteristics of Si PIN photodiodes with different photosensitive areas. The characteristic tunneling energy E₀₀ can be obtained to be 1.40 meV, 1.53 meV, 1.74 meV, 1.87 meV, and 2.01 meV, respectively, for the photodiodes with L=0.25 mm, 0.5 mm, 1 mm, 1.5 mm, and 2 mm by fitting the ideality factor n versus temperature curves according to the tunneling-enhanced recombination mechanism. The trap-assisted tunneling-enhanced recombination in the i-layer plays an important role in our device, which is consistent with the experimental result that area-dependent leakage current is dominant with the side length larger than 1 mm of the photosensitive area. Our results reveal that the quality of the bulk material plays an important role in the electrical conduction mechanism of the devices with the side length larger than 1 mm of the photosensitive area.

关键词: silicon PIN photodiodes, dark current, tunneling enhanced

Abstract: The mechanism for electrical conduction is investigated by the dark temperature-dependent current-voltage characteristics of Si PIN photodiodes with different photosensitive areas. The characteristic tunneling energy E₀₀ can be obtained to be 1.40 meV, 1.53 meV, 1.74 meV, 1.87 meV, and 2.01 meV, respectively, for the photodiodes with L=0.25 mm, 0.5 mm, 1 mm, 1.5 mm, and 2 mm by fitting the ideality factor n versus temperature curves according to the tunneling-enhanced recombination mechanism. The trap-assisted tunneling-enhanced recombination in the i-layer plays an important role in our device, which is consistent with the experimental result that area-dependent leakage current is dominant with the side length larger than 1 mm of the photosensitive area. Our results reveal that the quality of the bulk material plays an important role in the electrical conduction mechanism of the devices with the side length larger than 1 mm of the photosensitive area.

Key words: silicon PIN photodiodes, dark current, tunneling enhanced

中图分类号: (Semiconductor devices)

85.30.-z

85.60.Dw (Photodiodes; phototransistors; photoresistors) 85.60.Gz (Photodetectors (including infrared and CCD detectors))

丰亚洁, 李冲, 刘巧莉, 王华强, 胡安琪, 何晓颖, 郭霞. Scalability of dark current in silicon PIN photodiode[J]. 中国物理B, 2018, 27(4): 48501-048501.

Ya-Jie Feng(丰亚洁), Chong Li(李冲), Qiao-Li Liu(刘巧莉), Hua-Qiang Wang(王华强), An-Qi Hu(胡安琪), Xiao-Ying He(何晓颖), Xia Guo(郭霞). Scalability of dark current in silicon PIN photodiode[J]. Chin. Phys. B, 2018, 27(4): 48501-048501.

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Scalability of dark current in silicon PIN photodiode

Scalability of dark current in silicon PIN photodiode

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