中国物理B ›› 2018, Vol. 27 ›› Issue (10): 104207-104207.doi: 10.1088/1674-1056/27/10/104207
• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇 下一篇
Lin-Dong Ma(马林东), Yu-Dong Li(李豫东), Lin Wen(文林), Jie Feng(冯婕), Xiang Zhang(张翔), Tian-Hui Wang(王田珲), Yu-Long Cai(蔡毓龙), Zhi-Ming Wang(王志铭), Qi Guo(郭旗)
Lin-Dong Ma(马林东)1,2,3, Yu-Dong Li(李豫东)1,2, Lin Wen(文林)1,2, Jie Feng(冯婕)1,2, Xiang Zhang(张翔)1,2,3, Tian-Hui Wang(王田珲)1,2,3, Yu-Long Cai(蔡毓龙)1,2,3, Zhi-Ming Wang(王志铭)1,2,3, Qi Guo(郭旗)1,2
摘要:
A pinned photodiode complementary metal-oxide-semiconductor transistor (CMOS) active pixel sensor is exposed to 60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of 50 rad (SiO2)/s and a total dose of 100 krad (SiO2), and the photodiode is kept unbiased. The degradation of dark current, full well capacity, and quantum efficiency induced by the total ionizing dose damage effect are investigated. It is found that the dark current increases mainly from the shallow trench isolation (STI) surrounding the pinned photodiode. Further results suggests that the decreasing of full well capacity due to the increase in the density, is induced by the total ionizing dose (TID) effect, of the trap interface, which also leads to the degradation of quantum efficiency at shorter wavelengths.
中图分类号: (Environmental and radiation effects on optical elements, devices, and systems)