中国物理B ›› 2017, Vol. 26 ›› Issue (11): 114212-114212.doi: 10.1088/1674-1056/26/11/114212
• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇 下一篇
Analysis of proton and γ-ray radiation effects on CMOS active pixel sensors
Lindong Ma(马林东), Yudong Li(李豫东), Qi Guo(郭旗), Lin Wen(文林), Dong Zhou(周东), Jie Feng(冯婕), Yuan Liu(刘元), Junzhe Zeng(曾骏哲), Xiang Zhang(张翔), Tianhui Wang(王田珲)
- 1. Key Laboratory of Functional Materials and Devices for Special Environments of Chinese Academy of Sciences, Xinjiang Technical Institute of Physics & Chemistry, Urumqi 830011, China;
2. Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China;
3. University of Chinese Academy of Sciences, Beijing 100190, China
Analysis of proton and γ-ray radiation effects on CMOS active pixel sensors
Lindong Ma(马林东)1,2,3, Yudong Li(李豫东)1,2, Qi Guo(郭旗)1,2, Lin Wen(文林)1,2, Dong Zhou(周东)1,2, Jie Feng(冯婕)1,2, Yuan Liu(刘元)1,2,3, Junzhe Zeng(曾骏哲)1,2,3, Xiang Zhang(张翔)1,2,3, Tianhui Wang(王田珲)1,2,3
- 1. Key Laboratory of Functional Materials and Devices for Special Environments of Chinese Academy of Sciences, Xinjiang Technical Institute of Physics & Chemistry, Urumqi 830011, China;
2. Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China;
3. University of Chinese Academy of Sciences, Beijing 100190, China
摘要：
Radiation effects on complementary metal-oxide-semiconductor (CMOS) active pixel sensors (APS) induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43×1011 protons/cm2 and 2.14×1011 protons/cm2, respectively, while another sample has been exposed un-biased to 65 krad(Si) 60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the non-uniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed, especially for the interaction induced by proton displacement damage and total ion dose (TID) damage.
中图分类号: (Environmental and radiation effects on optical elements, devices, and systems)
- 42.88.+h