Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate

doi:10.1088/1674-1056/ab7903

中国物理B ›› 2020, Vol. 29 ›› Issue (4): 47303-047303.doi: 10.1088/1674-1056/ab7903

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate

Jiao-Xin Guo(郭娇欣), Jie Ding(丁杰), Chun-Lan Mo(莫春兰), Chang-Da Zheng(郑畅达), Shuan Pan(潘拴), Feng-Yi Jiang(江风益)

National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China

收稿日期:2019-11-16 修回日期:2020-01-11 出版日期:2020-04-05 发布日期:2020-04-05
通讯作者: Jie Ding E-mail:ncudj@163.com
基金资助:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0400600 and 2016YFB0400601) and the National Natural Science Foundation of China (Grant Nos. 61704069 and 51705230).

Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate

Jiao-Xin Guo(郭娇欣), Jie Ding(丁杰), Chun-Lan Mo(莫春兰), Chang-Da Zheng(郑畅达), Shuan Pan(潘拴), Feng-Yi Jiang(江风益)

National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330096, China

Received:2019-11-16 Revised:2020-01-11 Online:2020-04-05 Published:2020-04-05
Contact: Jie Ding E-mail:ncudj@163.com
Supported by:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0400600 and 2016YFB0400601) and the National Natural Science Foundation of China (Grant Nos. 61704069 and 51705230).

摘要/Abstract

摘要： The effect of AlGaN interlayer in quantum barrier on the electroluminescence characteristics of GaN-based green light emitting diodes (LEDs) grown on silicon substrate was investigated. The results show that AlGaN interlayer is beneficial to improve the luminous efficiency of LED devices and restrain the phase separation of InGaN. The former is ascribed to the inserted AlGaN layers can play a key role in determining the carrier distribution and screening dislocations in the active region, and the latter is attributed to the increased compressive stress in the quantum well. However, when the electrical stress aging tests were performed at a current density of 100 A/cm², LED devices with AlGaN interlayers are more likely to induce the generation/proliferation of defects in the active region under the effect of electrical stress, resulting in the reduced light output power at low current density.

关键词: green LED, AlGaN interlayer, external quantum efficiency, reliability

Abstract: The effect of AlGaN interlayer in quantum barrier on the electroluminescence characteristics of GaN-based green light emitting diodes (LEDs) grown on silicon substrate was investigated. The results show that AlGaN interlayer is beneficial to improve the luminous efficiency of LED devices and restrain the phase separation of InGaN. The former is ascribed to the inserted AlGaN layers can play a key role in determining the carrier distribution and screening dislocations in the active region, and the latter is attributed to the increased compressive stress in the quantum well. However, when the electrical stress aging tests were performed at a current density of 100 A/cm², LED devices with AlGaN interlayers are more likely to induce the generation/proliferation of defects in the active region under the effect of electrical stress, resulting in the reduced light output power at low current density.

Key words: green LED, AlGaN interlayer, external quantum efficiency, reliability

中图分类号: (III-V semiconductors)

73.61.Ey

85.60.Jb (Light-emitting devices) 73.21.Fg (Quantum wells) 78.60.Fi (Electroluminescence)

郭娇欣, 丁杰, 莫春兰, 郑畅达, 潘拴, 江风益. Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate[J]. 中国物理B, 2020, 29(4): 47303-047303.

Jiao-Xin Guo(郭娇欣), Jie Ding(丁杰), Chun-Lan Mo(莫春兰), Chang-Da Zheng(郑畅达), Shuan Pan(潘拴), Feng-Yi Jiang(江风益). Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate[J]. Chin. Phys. B, 2020, 29(4): 47303-047303.

参考文献 32

[1]	Tong J H, Zhao B J, Ren Z W, Wang X F, Chen X and Li S T 2013 Chin. Phys. Lett. 30 058503 doi: 10.1088/0256-307X/30/5/058503
[2]	Zhao Y K, Li Y F, Huang Y P, Wang H, Su X L, Ding W and Yun F 2015 Chin. Phys. B 24 056806 doi: 10.1088/1674-1056/24/5/056806
[3]	Lin Y, Zhang Y, Guo Z Q, Zhang J H, Huang W L, Lu Y J, Deng Z H, Liu Z G and Cao Y G 2015 Opt. Express 23 979 doi: 10.1364/OE.23.00A979
[4]	Vampola K J, Iza M, Keller S, Denbaars S P and Nakamura S 2009 Appl. Phys. Lett. 94 061116 doi: 10.1063/1.3081059
[5]	Wang J X, Wang L, Zhao W, Hao Z B and Luo Y 2010 Appl. Phys. Lett. 97 201112 doi: 10.1063/1.3520139
[6]	Zhao H P, Liu G Y, Arif R A and Tansu N 2010 Solid State Electron. 54 1119 doi: 10.1016/j.sse.2010.05.019
[7]	Justin I, Lucio M, Jacques P, Speck J S and Claude W 2013 Phys. Rev. Lett. 110 177406 doi: 10.1103/PhysRevLett.110.177406
[8]	Fu J, Zhao L, Ning Z, Wang J and Li J 2015 Journal of Solid State Lighting 2 5 doi: 10.1186/s40539-015-0024-y
[9]	Lin R M, Lai M J, Chang L B and Huang C H 2010 Appl. Phys. Lett. 97 181108 doi: 10.1063/1.3513394
[10]	Wu X M, Liu J L, Quan Z J, Xiong C B, Zheng C D, Zhang J L, Mao Q H and Jiang F Y 2014 Appl. Phys. Lett. 104 221101 doi: 10.1063/1.4880731
[11]	Wang Z X, Mo C L, Zheng C D, Wu X M, Liu J L and Jiang F Y 2019 Superlattices Microstruct. 128 307 doi: 10.1016/j.spmi.2019.01.015
[12]	Meneghini M, Lago M D, Rodighiero L, Trivellin N, Zanoni E and Meneghesso G 2012 Microelectron. Reliab. 52 1621 doi: 10.1016/j.microrel.2011.10.012
[13]	La Grassa M, Meneghini M, De Santi C, Mandurrino M, Goano M, Bertazzi F, Zeisel R, Galler B, Meneghesso G and Zanoni E 2015 Microelectron. Reliab. 55 1775 doi: 10.1016/j.microrel.2015.06.103
[14]	Zhang N, Wei X C, Lu K Y Feng L S, Yang J, Xue B, Liu Z, Li J M and Wang J X 2016 Chin. Phys. Lett. 33 117302 doi: 10.1088/0256-307X/33/11/117302
[15]	Zhang T R, Fang F, Wang X L, Zhang J L, Wu X M, Pan S, Liu J L and Jiang F Y 2019 Chin. Phys. B 28 067305 doi: 10.1088/1674-1056/28/6/067305
[16]	Fu J J, Zhao L X, Cao H C, Sun X J, Sun B J, Wang J X and Li J M 2016 AIP Adv. 6 055219 doi: 10.1063/1.4953056
[17]	Meneghini M, Rigutti L, Trevisanello L R, Cavallini A, Meneghesso G and Zanoni E 2008 J. Appl. Phys. 103 063703 doi: 10.1063/1.2885703
[18]	Kim H, Yang H, Huh C, Kim S W, Park S J and Hwang H 2000 Electron. Lett. 36 908 doi: 10.1049/el:20000657
[19]	Yoo Y S, Na J H, Son S J and Cho Y H 2016 Sci. Rep. 6 1 doi: 10.1038/s41598-016-0001-8
[20]	Quan Z J, Wang L, Zheng C D, Liu J L and Jiang F Y 2014 J. Appl. Phys. 116 183107 doi: 10.1063/1.4901828
[21]	Li C K, Wu C K, Hsu C C, Lu L S, Li H, Lu T C and Wu Y R 2016 AIP Adv. 6 055208 doi: 10.1063/1.4950771
[22]	Shioda T, Yoshida H, Tachibana K, Sugiyama N and Nunoue S 2012 Phys. Status Solidi 209 473 doi: 10.1002/pssa.201100356
[23]	Tao X X, Liu J L, Zhang J L, Mo C L, Xu L Q, Ding J, Wang G X,Wang X L, Wu X M, Quan Z J, Pan S, Fang F and Jiang F Y 2018 Opt. Mater. Express 8 1221 doi: 10.1364/OME.8.001221
[24]	Karpov S Y 1998 Mrs Internet J. Nitride Semicond. Res. 3 16 doi: 10.1557/S1092578300000880
[25]	Tabata A, Teles L K, Scolfaro L M R, Leite J R, Kharchenko A, Frey T, As D J, Schikora D, Lischka K and Furthmüller J 2002 Appl. Phys. Lett. 80 769 doi: 10.1063/1.1436270
[26]	Meneghini M, Tazzoli A, Mura G, Meneghesso G and Zanoni E 2009 IEEE Trans. Electron Dev. 57 108
[27]	Liu L L, Ling M J, Yang J F, Wang X Q, Jia W and Gang W 2012 J. Appl. Phys. 111 093110 doi: 10.1063/1.4712030
[28]	Chen T T, Wang C P, Fu H K, Chou P T and Ying S P 2014 Opt. Express 22 A1328
[29]	Kim K S, Han D P, Kim H S and Shim J I 2014 Appl. Phys. Lett. 104 091110 doi: 10.1063/1.4867647
[30]	Manyakhin F, Kovalev A and Yunovich A E 1998 Mrs Internet J. Nitride Semicond. Res. 3 53 doi: 10.1557/S1092578300001253
[31]	Cao X A, Sandvik P M, Leboeuf S F and Arthur S D 2003 Microelectron. Reliab. 43 1987 doi: 10.1016/j.microrel.2003.06.001
[32]	Lin Y S, Ma K J, Hsu C, Feng S W, Cheng Y C, Liao C C, Yang C C, Chou C C, Lee C M and Chyi J I 2000 Appl. Phys. Lett. 77 2988 doi: 10.1063/1.1323542

Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate

Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate

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