Modified model of gate leakage currents in AlGaN/GaN HEMTs

doi:10.1088/1674-1056/25/10/107106

中国物理B ›› 2016, Vol. 25 ›› Issue (10): 107106-107106.doi: 10.1088/1674-1056/25/10/107106

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Modified model of gate leakage currents in AlGaN/GaN HEMTs

Yuan-Gang Wang(王元刚), Zhi-Hong Feng(冯志红), Yuan-Jie Lv(吕元杰), Xin Tan(谭鑫), Shao-Bo Dun(敦少博), Yu-Long Fang(房玉龙), Shu-Jun Cai(蔡树军)

National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

收稿日期:2016-04-12 修回日期:2016-05-23 出版日期:2016-10-05 发布日期:2016-10-05
通讯作者: Zhi-Hong Feng, Yuan-Jie Lv E-mail:ga917vv@163.com;yuanjielv@163.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61306113).

Modified model of gate leakage currents in AlGaN/GaN HEMTs

Yuan-Gang Wang(王元刚), Zhi-Hong Feng(冯志红), Yuan-Jie Lv(吕元杰), Xin Tan(谭鑫), Shao-Bo Dun(敦少博), Yu-Long Fang(房玉龙), Shu-Jun Cai(蔡树军)

National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

Received:2016-04-12 Revised:2016-05-23 Online:2016-10-05 Published:2016-10-05
Contact: Zhi-Hong Feng, Yuan-Jie Lv E-mail:ga917vv@163.com;yuanjielv@163.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61306113).

摘要/Abstract

摘要： It has been reported that the gate leakage currents are described by Frenkel-Poole emission (FPE) model, at the temperatures higher than 250 K. However, the gate leakage currents of our passivated devices do not accord with the FPE model. Therefore, a modified FPE model is developed in which an additional leakage current, besides the gate (I_II), is added. Based on the samples with different passivations, the I_II caused by a large number of surface traps is separated from total gate currents, and is found to be linear with respect to (φ_B-V_g)^0.5. Compared with these from the FPE model, the calculated results from the modified model agree well with the I_g-V_g measurements at temperatures ranging from 295 K to 475 K.

关键词: gate leakage currents, FPE model, additional leakage current, surface traps

Abstract: It has been reported that the gate leakage currents are described by Frenkel-Poole emission (FPE) model, at the temperatures higher than 250 K. However, the gate leakage currents of our passivated devices do not accord with the FPE model. Therefore, a modified FPE model is developed in which an additional leakage current, besides the gate (I_II), is added. Based on the samples with different passivations, the I_II caused by a large number of surface traps is separated from total gate currents, and is found to be linear with respect to (φ_B-V_g)^0.5. Compared with these from the FPE model, the calculated results from the modified model agree well with the I_g-V_g measurements at temperatures ranging from 295 K to 475 K.

Key words: gate leakage currents, FPE model, additional leakage current, surface traps

中图分类号: (III-V semiconductors)

71.55.Eq

72.20.Fr (Low-field transport and mobility; piezoresistance) 72.10.-d (Theory of electronic transport; scattering mechanisms) 77.22.Ej (Polarization and depolarization)

王元刚, 冯志红, 吕元杰, 谭鑫, 敦少博, 房玉龙, 蔡树军. Modified model of gate leakage currents in AlGaN/GaN HEMTs[J]. 中国物理B, 2016, 25(10): 107106-107106.

Yuan-Gang Wang(王元刚), Zhi-Hong Feng(冯志红), Yuan-Jie Lv(吕元杰), Xin Tan(谭鑫), Shao-Bo Dun(敦少博), Yu-Long Fang(房玉龙), Shu-Jun Cai(蔡树军). Modified model of gate leakage currents in AlGaN/GaN HEMTs[J]. Chin. Phys. B, 2016, 25(10): 107106-107106.

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Modified model of gate leakage currents in AlGaN/GaN HEMTs

Modified model of gate leakage currents in AlGaN/GaN HEMTs

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