Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO2/H2O technology

doi:10.1088/1674-1056/abb22f

中国物理B ›› 2020, Vol. 29 ›› Issue (12): 127101-.doi: 10.1088/1674-1056/abb22f

收稿日期:2020-05-08 修回日期:2020-07-31 接受日期:2020-08-25 出版日期:2020-12-01 发布日期:2020-11-13

Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO₂/H₂O technology

Meihua Liu(刘美华), Zhangwei Huang(黄樟伟), Kuan-Chang Chang(张冠张), Xinnan Lin(林信南), Lei Li(李蕾), and Yufeng Jin(金玉丰)†

School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518055, China

Received:2020-05-08 Revised:2020-07-31 Accepted:2020-08-25 Online:2020-12-01 Published:2020-11-13
Contact: ^†Corresponding author. E-mail: yfjin@pku.edu.cn
Supported by:
Project supported by Shenzhen Science and Technology Innovation Committee (Grant Nos. ZDSYS201802061805105, JCYJ20190808155007550, QJSCX20170728102129176, and JCYJ20170810163407761) and the National Natural Science Foundation of China (Grant No. U1613215).

摘要/Abstract

Abstract: The impact of supercritical CO₂/H₂O technology on the threshold-voltage instability of AlGaN/GaN metal-insulator semiconductor high-electron-mobility transistors (MIS-HEMTs) is investigated. The MIS-HEMTs were placed in a supercritical fluid system chamber at 150 ^°C for 3 h. The chamber was injected with CO₂ and H₂O at pressure of 3000 psi (1 psi≈6.895 kPa). Supercritical H₂O fluid has the characteristics of liquid H₂O and gaseous H₂O at the same time, that is, high penetration and high solubility. In addition, OH^- produced by ionization of H₂O can fill the nitrogen vacancy near the Si₃N₄/GaN/AlGaN interface caused by high temperature process. After supercritical CO₂/H₂O treatment, the threshold voltage shift is reduced from 1 V to 0.3 V. The result shows that the threshold voltage shift of MIS-HEMTs could be suppressed by supercritical CO₂/H₂O treatment.

Key words: MIS-HEMTs, threshold-voltage instability, gate stress, temperature influence

中图分类号: (III-V semiconductors)

71.55.Eq

73.20.-r (Electron states at surfaces and interfaces) 73.50.-h (Electronic transport phenomena in thin films)

. [J]. 中国物理B, 2020, 29(12): 127101-.

Meihua Liu(刘美华), Zhangwei Huang(黄樟伟), Kuan-Chang Chang(张冠张), Xinnan Lin(林信南), Lei Li(李蕾), and Yufeng Jin(金玉丰). Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO₂/H₂O technology[J]. Chin. Phys. B, 2020, 29(12): 127101-.

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Characterization and optimization of AlGaN/GaN metal-insulator semiconductor heterostructure field effect transistors using supercritical CO₂/H₂O technology

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