Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction

doi:10.1088/1674-1056/27/9/097104

中国物理B ›› 2018, Vol. 27 ›› Issue (9): 97104-097104.doi: 10.1088/1674-1056/27/9/097104

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction

1 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2018-05-25 修回日期:2018-06-18 出版日期:2018-09-05 发布日期:2018-09-05
通讯作者: Hong Chen E-mail:hchen@iphy.ac.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0400302 and 2016YFB0400603), the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, and 11374340), and the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515001).

Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction

Yangfeng Li(李阳锋)^1,2, Yang Jiang(江洋)^1,2, Junhui Die(迭俊珲)^1,2, Caiwei Wang(王彩玮)^1,2, Shen Yan(严珅)^1,2, Haiyan Wu(吴海燕)^1,2, Ziguang Ma(马紫光)^1,2, Lu Wang(王禄)^1,2, Haiqiang Jia(贾海强)^1,2, Wenxin Wang(王文新)^1,2, Hong Chen(陈弘)^1,2

1 Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China

Received:2018-05-25 Revised:2018-06-18 Online:2018-09-05 Published:2018-09-05
Contact: Hong Chen E-mail:hchen@iphy.ac.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFB0400302 and 2016YFB0400603), the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, and 11374340), and the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515001).

摘要/Abstract

摘要：

Absorption and carrier transport behavior plays an important role in the light-to-electricity conversion process, which is difficult to characterize. Here we develop a method to visualize such a conversion process in the InGaN/GaN multi-quantum wells embedded in a p-n junction. Under non-resonant absorption conditions, a photocurrent was generated and the photoluminescence intensity decayed by more than 70% when the p-n junction out-circuit was switched from open to short. However, when the excitation photon energy decreased to the resonant absorption edge, the photocurrent dropped drastically and the photoluminescence under open and short circuit conditions showed similar intensity. These results indicate that the escaping of the photo-generated carriers from the quantum wells is closely related to the excitation photon energy.

关键词: multiple quantum wells, p-n junction, light-to-electricity, photocurrent

Abstract:

Key words: multiple quantum wells, p-n junction, light-to-electricity, photocurrent

中图分类号: (III-V semiconductors)

71.55.Eq

72.40.+w (Photoconduction and photovoltaic effects) 73.21.Fg (Quantum wells) 73.63.Hs (Quantum wells)

李阳锋, 江洋, 迭俊珲, 王彩玮, 严珅, 吴海燕, 马紫光, 王禄, 贾海强, 王文新, 陈弘. Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction[J]. 中国物理B, 2018, 27(9): 97104-097104.

Yangfeng Li(李阳锋), Yang Jiang(江洋), Junhui Die(迭俊珲), Caiwei Wang(王彩玮), Shen Yan(严珅), Haiyan Wu(吴海燕), Ziguang Ma(马紫光), Lu Wang(王禄), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Hong Chen(陈弘). Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction[J]. Chin. Phys. B, 2018, 27(9): 97104-097104.

参考文献 31

[1]	Battaglia C, Cuevas A and De Wolf S 2016 Energy & Environmental Sci. 9 1552 doi: y
[2]	Yoshikawa K, Kawasaki H, Yoshida W, Irie T, Konishi K, Nakano K, Uto T, Adachi D, Kanematsu M, Uzu H and Yamamoto K 2017 Nat. Energy 2 17032 doi: 10.1038/nenergy.2017.32
[3]	Liu L, Bi H, Zhao Y, Zhao X, Han X, Wang G, Xu Y, Li Y and Che R 2017 Appl. Phys. Lett. 111 053503 doi: 10.1063/1.4996863
[4]	Åberg I, Vescovi G, Asoli D, Naseem U, Gilboy J P, Sundvall C, Dahlgren A, Svensson K E, Anttu N, Björk M T and Samuelson L 2016 IEEE J. Photovoltaics 6 185 doi: 10.1109/JPHOTOV.2015.2484967
[5]	Hirst L C, Yakes M K, Warner J H, Bennett M F, Schmieder K J, Walters R J and Jenkins P P 2016 Appl. Phys. Lett. 109 033908 doi: 10.1063/1.4959784
[6]	Kada T, Asahi S, Kaizu T, Harada Y, Kita T, Tamaki R, Okada Y and Miyano K 2015 Phys. Rev. B 91 201303 doi: 10.1103/PhysRevB.91.201303
[7]	Białek M, Witowski A M, Orlita M, Potemski M, Czapkiewicz M, Wróbel J, Umansky V, Grynberg M and Ł usakowski J 2014 J. Appl. Phys. 115 214503 doi: 10.1063/1.4881777
[8]	Luo L B, Chen J J, Wang M Z, Hu H, Wu C Y, Li Q, Wang L, Huang J A and Liang F X 2014 Advanced Funct. Mater. 24 2794 doi: 10.1002/adfm.201303368
[9]	Peng K, Parkinson P, Fu L, Gao Q, Jiang N, Guo Y N, Wang F, Joyce H J, Bol, J L, Tan H H, Jagadish C and Johnston M B 2015 Nano Lett. 15 206 doi: 10.1021/nl5033843
[10]	Grundmann M 2010 The Physics of Semicondutors (2nd Edn) (Heidelberg:Springer-Verlag) pp. 369-374
[11]	Botha J R and Leitch A W R 1994 Phys. Rev. B 50 18147 doi: 10.1103/PhysRevB.50.18147
[12]	Lambkin J D, Dunstan D J, Homewood K P, Howard L K and Emeny M T 1990 Appl. Phys. Lett. 57 1986 doi: 10.1063/1.103987
[13]	Lang J R, Young N G, Farrell R M, Wu Y R and Speck J S 2012 Appl. Phys. Lett. 101 181105 doi: 10.1063/1.4765068
[14]	Massimo G, Juan M P, Marcello C, Christiane D, Bruno C and Jean M 1992 Phys. Rev. B 46 6922 doi: 10.1103/PhysRevB.46.6922
[15]	Laubsch A, Sabathil M, Bergbauer W, Strassburg M, Lugauer H, Peter M, Lutgen S, Linder N, Streubel K, Hader J, Moloney J V, Pasenow B and Koch S W 2009 Phys. Status Solidi C 6 S913
[16]	Shen Y C, Mueller G O, Watanabe S, Gardner N F, Munkholm A and Krames M R 2007 Appl. Phys. Lett. 91 141101 doi: 10.1063/1.2785135
[17]	Wu H Y, Ma Z G, Jiang Y, Wang L, Yang H J, Li Y F, Zuo P, Jia H Q, Wang W X, Zhou J M, Liu W M and Chen H 2016 Chin. Phy. B 25 117803 doi: 10.1088/1674-1056/25/11/117803
[18]	Sun Q L, Wang L, Jiang Y, Ma Z G, Wang W Q, Sun L, Wang W X, Jia H Q, Zhou J M and Chen H 2016 Chin. Phys. Lett. 33 106801 doi: 10.1088/0256-307X/33/10/106801
[19]	Wang W Q, Wang L, Jiang Y, Ma Z G, Sun L, Liu J, Sun Q L, Zhao B, Wang W X, Liu W M, Jia H Q and Chen H 2016 Chin. Phys. B 25 097307 doi: 10.1088/1674-1056/25/9/097307
[20]	Yang H J, Ma Z G, Jiang Y, Wu H Y, Zuo P, Zhao B, Jia H Q and Chen H 2017 Sci. Rep. 7 43357 doi: 10.1038/srep43357
[21]	Schubert M F, Xu J, Dai Q, Mont F W, Kim J K and Schubert E F 2009 Appl. Phys. Lett. 94 081114 doi: 10.1063/1.3089691
[22]	Lim S H, Ko Y H and Cho Y H 2014 Appl. Phys. Lett. 104 091104 doi: 10.1063/1.4867238
[23]	Song J H, Kim H J, Ahn B J, Dong Y Q, Hong S, Song J H, Moon Y, Yuh H K, Choi S C and Shee S 2009 Appl. Phys. Lett. 95 263503 doi: 10.1063/1.3272679
[24]	Basu P K 1997 Theory Opt. Processes Semicond.:Bulk Microstruct (1st Edn.) (New York:Oxford University Press) pp. 303-320
[25]	Fonash S J 2010 Sol. Cell Device Physics (1st Edn.) (Burlington:Academic Press/Elsevier) pp. 14-25
[26]	Chichibu S F, Uedono A, Onuma T, Haskell B A, Chakraborty A, Koyama T, Fini P T, Keller S, Denbaars S P, Speck J S, Mishra U K, Nakamura S, Yamaguchi S, Kamiyama S, Amano H, Akasaki I, Han J and Sota T 2006 Nat. Mater. 5 810 doi: 10.1038/nmat1726
[27]	Lu T P, Ma Z G, Du C H, Fang Y T, Wu H Y, Jiang Y, Wang L, Dai L G, Jia H Q, Liu W M and Chen H 2015 Sci. Rep. 4 6131 doi: 10.1038/srep06131
[28]	Eliseev P G, Perlin P, Lee J and Osiński M 1997 Appl. Phys. Lett. 71 569 doi: 10.1063/1.119797
[29]	White M E, O'Donnell K P, Martin R W, Deatcher C J, Damilano B, Grandjean N and Massies J 2001 Phys. Status Solidi B 228 129 doi: 10.1002/1521-3951(200111)228:1<129::AID-PSSB129>3.0.CO;2-N
[30]	Sze S M and Ng K K 2007 Physics of Semiconductor Devices (3rd Edn.) (New York:John Wiley & Sons) pp. 28-30
[31]	Sun C K, Vallée F, Keller S, Bowers J E and DenBaars S P 1997 Appl. Phys. Lett. 70 2004 doi: 10.1063/1.118803

Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction

Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 31

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Wen-Jie Wang(王文杰), Ming-Le Liao(廖明乐), Jun Yuan(袁浚), Si-Yuan Luo(罗思源), and Feng Huang(黄锋). Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers[J]. 中国物理B, 2022, 31(7): 74206-074206.
[2]	Haiting Yao(姚海婷), Xin Guo(郭鑫), Aida Bao(鲍爱达), Haiyang Mao(毛海央),Youchun Ma(马游春), and Xuechao Li(李学超). Graphene-based heterojunction for enhanced photodetectors[J]. 中国物理B, 2022, 31(3): 38501-038501.
[3]	Yinzhe Liu(刘寅哲), Kewei Liu(刘可为), Jialin Yang(杨佳霖), Zhen Cheng(程祯), Dongyang Han(韩冬阳), Qiu Ai(艾秋), Xing Chen(陈星), Yongxue Zhu(朱勇学), Binghui Li(李炳辉), Lei Liu(刘雷), and Dezhen Shen(申德振). Boosting the performance of crossed ZnO microwire UV photodetector by mechanical contact homo-interface barrier[J]. 中国物理B, 2022, 31(10): 106101-106101.
[4]	Ling-Ling Wu(吴玲玲), Guang-Wei Wang(王光伟), Juan Tian(田涓), Dong-Ming Wang(王东明), and De-Liang Wang(王德亮). Recombination-induced voltage-dependent photocurrent collection loss in CdTe thin film solar cell[J]. 中国物理B, 2022, 31(10): 108803-108803.
[5]	Shang-Da Qu(屈尚达), Ming-Sheng Xu(徐明升), Cheng-Xin Wang(王成新), Kai-Ju Shi(时凯居), Rui Li(李睿), Ye-Hui Wei(魏烨辉), Xian-Gang Xu(徐现刚), and Zi-Wu Ji(冀子武). Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer[J]. 中国物理B, 2022, 31(1): 17801-017801.
[6]	Chen Yue(岳琛), Xian-Sheng Tang(唐先胜), Yang-Feng Li(李阳锋), Wen-Qi Wang(王文奇), Xin-Xin Li(李欣欣), Jun-Yang Zhang(张珺玚), Zhen Deng(邓震), Chun-Hua Du(杜春花), Hai-Qiang Jia(贾海强), Wen-Xin Wang(王文新), Wei Lu(陆卫), Yang Jiang(江洋), and Hong Chen(陈弘). Enhanced absorption process in the thin active region of GaAs based p-i-n structure[J]. 中国物理B, 2021, 30(9): 97803-097803.
[7]	F Sobhani, H Heidarzadeh, H Bahador. Photocurrent improvement of an ultra-thin silicon solar cell using the localized surface plasmonic effect of clustering nanoparticles[J]. 中国物理B, 2020, 29(6): 68401-068401.
[8]	谭铭瑞, 刘庆辉, 隋宁, 康智慧, 张里荃, 张汉壮, 王文全, 周强, 王英惠. Studying the charge carrier properties in CuInS₂ films via femtosecond transient absorption and nanosecond transient photocurrents[J]. 中国物理B, 2019, 28(5): 56106-056106.
[9]	李长富, 时凯居, 徐明升, 徐现刚, 冀子武. Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells[J]. 中国物理B, 2019, 28(10): 107803-107803.
[10]	刘頔, 祁晓卓, 邱奎霖, Takashi Taniguchi, 任希锋, 郭国平. Optoelectronic properties of bottom gate-defined in-plane monolayer WSe₂ p-n junction[J]. 中国物理B, 2018, 27(8): 87303-087303.
[11]	张真真, 符张龙, 郭旭光, 曹俊诚. 4.3 THz quantum-well photodetectors with high detection sensitivity[J]. 中国物理B, 2018, 27(3): 30701-030701.
[12]	胡思奇, 田睿娟, 罗小光, 殷瑞, 程迎春, 赵建林, 王肖沐, 甘雪涛. Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors[J]. 中国物理B, 2018, 27(12): 128502-128502.
[13]	郑卫民, 丛伟艳, 李素梅, 王爱芳, 李斌, 黄海北. Raman spectrum study of δ -doped GaAs/AlAs multiple-quantum wells[J]. 中国物理B, 2018, 27(1): 17302-017302.
[14]	解东梅, 唐小文, 林原, 马品, 周晓文. Electron transport properties of TiO₂ shell on Al₂O₃ core in dye-sensitized solar cells[J]. 中国物理B, 2018, 27(1): 17804-017804.
[15]	黄海林, 王登京, 张洪瑞, 张慧, 熊昌民, 孙继荣, 沈保根. Abundant photoelectronic behaviors of La_0.67Sr_0.33MnO₃/Nb: SrTiO₃ junctions[J]. 中国物理B, 2017, 26(7): 77302-077302.