Ohmic and Schottky contacts of hydrogenated and oxygenated boron-doped single-crystal diamond with hill-like polycrystalline grains

doi:10.1088/1674-1056/ac032b

中国物理B ›› 2021, Vol. 30 ›› Issue (9): 96803-096803.doi: 10.1088/1674-1056/ac032b

Ohmic and Schottky contacts of hydrogenated and oxygenated boron-doped single-crystal diamond with hill-like polycrystalline grains

Jing-Cheng Wang(王旌丞)¹, Hao Chen(陈浩)¹, Lin-Feng Wan(万琳丰)¹, Cao-Yuan Mu(牟草源)¹, Yao-Feng Liu(刘尧峰)¹, Shao-Heng Cheng(成绍恒)^1,2,†, Qi-Liang Wang(王启亮)^1,2,‡, Liu-An Li(李柳暗)¹, and Hong-Dong Li(李红东)^1,2,§

1 State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China;
2 Shenzhen Research Institute, Jilin University, Shenzhen 518057, China

收稿日期:2021-04-01 修回日期:2021-05-14 接受日期:2021-05-20 出版日期:2021-08-19 发布日期:2021-08-19
通讯作者: Shao-Heng Cheng, Qi-Liang Wang, Hong-Dong Li E-mail:chengshaoheng@jlu.edu.cn;wangqiliang@jlu.edu.cn;hdli@jlu.edu.cn
基金资助:
Project supported by the Key-Area Research and Development Program of Guangdong Province (Grant No. 2020B0101690001) and the National Natural Science Foundation of China (NSFC) (Grant No. 51972135).

Ohmic and Schottky contacts of hydrogenated and oxygenated boron-doped single-crystal diamond with hill-like polycrystalline grains

1 State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China;
2 Shenzhen Research Institute, Jilin University, Shenzhen 518057, China

Received:2021-04-01 Revised:2021-05-14 Accepted:2021-05-20 Online:2021-08-19 Published:2021-08-19
Contact: Shao-Heng Cheng, Qi-Liang Wang, Hong-Dong Li E-mail:chengshaoheng@jlu.edu.cn;wangqiliang@jlu.edu.cn;hdli@jlu.edu.cn
Supported by:
Project supported by the Key-Area Research and Development Program of Guangdong Province (Grant No. 2020B0101690001) and the National Natural Science Foundation of China (NSFC) (Grant No. 51972135).

摘要/Abstract

摘要： Hill-like polycrystalline diamond grains (HPDGs) randomly emerged on a heavy boron-doped p⁺ single-crystal diamond (SCD) film by prolonging the growth duration of the chemical vapor deposition process. The Raman spectral results confirm that a relatively higher boron concentration (～ 1.1×10²¹ cm^-3) is detected on the HPDG with respect to the SCD region (～ 5.4×10²⁰ cm^-3). It demonstrates that the Au/SCD interface can be modulated from ohmic to Schottky contact by varying the surface from hydrogen to oxygen termination. The current-voltage curve between two HPDGs is nearly linear with either oxygen or hydrogen termination, which means that the HPDGs provide a leakage path to form an ohmic contact. There are obvious rectification characteristics between oxygen-terminated HPDGs and SCD based on the difference in boron doping levels in those regions. The results reveal that the highly boron-doped HPDGs grown in SCD can be adopted as ohmic electrodes for Hall measurement and electronic devices.

关键词: CVD diamond film, boron-doped diamond film, ohmic contact, Schottky junction

Abstract: Hill-like polycrystalline diamond grains (HPDGs) randomly emerged on a heavy boron-doped p⁺ single-crystal diamond (SCD) film by prolonging the growth duration of the chemical vapor deposition process. The Raman spectral results confirm that a relatively higher boron concentration (～ 1.1×10²¹ cm^-3) is detected on the HPDG with respect to the SCD region (～ 5.4×10²⁰ cm^-3). It demonstrates that the Au/SCD interface can be modulated from ohmic to Schottky contact by varying the surface from hydrogen to oxygen termination. The current-voltage curve between two HPDGs is nearly linear with either oxygen or hydrogen termination, which means that the HPDGs provide a leakage path to form an ohmic contact. There are obvious rectification characteristics between oxygen-terminated HPDGs and SCD based on the difference in boron doping levels in those regions. The results reveal that the highly boron-doped HPDGs grown in SCD can be adopted as ohmic electrodes for Hall measurement and electronic devices.

Key words: CVD diamond film, boron-doped diamond film, ohmic contact, Schottky junction

中图分类号: (Semiconductor surfaces)

68.47.Fg

68.47.Gh (Oxide surfaces) 71.55.Eq (III-V semiconductors) 72.20.-i (Conductivity phenomena in semiconductors and insulators)

Jing-Cheng Wang(王旌丞), Hao Chen(陈浩), Lin-Feng Wan(万琳丰), Cao-Yuan Mu(牟草源), Yao-Feng Liu(刘尧峰), Shao-Heng Cheng(成绍恒), Qi-Liang Wang(王启亮), Liu-An Li(李柳暗), and Hong-Dong Li(李红东). Ohmic and Schottky contacts of hydrogenated and oxygenated boron-doped single-crystal diamond with hill-like polycrystalline grains[J]. 中国物理B, 2021, 30(9): 96803-096803.

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Ohmic and Schottky contacts of hydrogenated and oxygenated boron-doped single-crystal diamond with hill-like polycrystalline grains

Ohmic and Schottky contacts of hydrogenated and oxygenated boron-doped single-crystal diamond with hill-like polycrystalline grains

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