1 Kuzhara M and Tokuda H 2015 IEEE Trans. Electron Dev. 62 405 2 Millan J, Godignon P, Perpina X, Perez-Tomas A and Rebollo J 2014 IEEE Trans. Power Electron. 29 2155 3 Hilt O, Bahat-Treidel E, Knauer A, Brunner F, Zhytnyska R and Würfl J 2015 MRS Bull. 40 418 4 Wu T L, Marcon D, You S, Posthuma N E, Bakeroot B, Stoffels S, Van Hove M, Groeseneken G and Decoutere S 2015 IEEE Electron Dev. Lett. 36 1001 5 He Y L, Wang C, Mi M H, Zheng X F, Zhang M, Zhao M D, Zhang H S, Chen L X, Zhang J C, Ma X H and Hao Y 2016 Chin. Phys. B 25 117305 6 Kanamura M, Ohki T, Kikkawa T, Imanishi K, Imada T, Yamada A and Hara N 2010 IEEE Electron Dev. Lett. 31 189 7 Liu S C, Chen B Y, Lin Y C, Hsieh T E, Wang H C and Chang E Y 2014 IEEE Electron Dev. Lett. 35 1001 8 Hua M Y, Liu C, Yang S, Liu S H, Fu K, Dong Z H, Cai Y, Zhang B S and Chen K J 2015 IEEE Electron Dev. Lett. 36 448 9 Cai Y, Zhou Y G, Lau K M and Chen K J 2006 IEEE Trans. Electron Dev. 53 2207 10 Mizuno H, Kishimoto S, Maezawa K and Mitzutani T 2007 Phys. Stat. Sol. 4 2732 11 Ota K, Endo K, Okamoto Y, Ando Y and Shimawaki H 2009 Proceedings of the IEEE International Electron Devices Meeting, December 7-9, 2009, Baltimore, MD, USA, p. 7.3.1 12 Uemoto Y, Hikita M, Ueno H, Matsuo H, Ishida H, Yanagihara M, Ueda T, Tanaka T and Ueda D 2007 IEEE Trans. Electron Dev. 54 3393 13 Marcon D, Saripalli Y N and Decoutere S 2015 Proceedings of the IEEE International Electron Devices Meeting, December 7-9, 2005, Washington, DC, USA, p. 16.2.1 14 Meneghiniet M, de Santi C, Ueda T, Tanaka D, Zanoni E and Meneghesso G 2012 IEEE Electron Dev. Lett. 33 375 15 Chang T, Hsiao T, Huang C, Kuo W, Lin S, Samudra G S and Liang Y C 2015 IEEE Trans. Electron Dev. 62 339 16 Rossetto I, Meneghini M, Hilt O, Treidel E B, Santi C D, Dalcanale S, Wuerfl J, Zanoni E and Meneghesso G 2016 IEEE Trans. Electron Dev. 63 2334 17 Ma X H, Jiang Y Q, Wang X H, Lü M, Zhang H, Chen W W and Liu X Y 2014 Chin. Phys. B 23 017303 18 Meneghini M, Stocco A, Bertin M, Marcon D, Chini A, Meneghesso G and Zanoni E2012 Appl. Phys. Lett. 100 287 19 Tapajna M, Hilt O, Bahat-Treidel E, Würfl J and Kuzm\'ík J 2016 IEEE Electron Dev. Lett. 37 385 20 Tallarico A N, Stoffels S, Magnone P, Posthuma N, Sangiorgi E Decoutere S and Fiegna C 2016 IEEE Electron Dev. Lett. 38 99 21 Meneghesso G, Meneghini M, Silvestri R, Vanmeerbeek P, Moens P and Zanoni E 2016 Jpn. J. Appl. Phys. 55 01AD04 |