Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] direction

doi:10.1088/1674-1056/ac4746

中国物理B ›› 2022, Vol. 31 ›› Issue (4): 47103-047103.doi: 10.1088/1674-1056/ac4746

Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] direction

Qiu-Ling Qiu(丘秋凌)¹, Shi-Xu Yang(杨世旭)², Qian-Shu Wu(吴千树)¹, Cheng-Lang Li(黎城朗)¹, Qi Zhang(张琦)¹, Jin-Wei Zhang(张津玮)¹, Zhen-Xing Liu(刘振兴)¹, Yuan-Tao Zhang(张源涛)^2,†, and Yang Liu(刘扬)^1,‡

1 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China;
2 States Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

收稿日期:2021-10-25 修回日期:2021-12-16 接受日期:2021-12-31 出版日期:2022-03-16 发布日期:2022-03-21
通讯作者: Yuan-Tao Zhang, Yang Liu E-mail:zhangyt@jlu.edu.cn;liuy69@mail.sysu.edu.cn
基金资助:
Project supported by the Key Research and Development Program of Guangdong Province, China (Grant No. 2020B010174003).

Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] direction

1 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China;
2 States Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

Received:2021-10-25 Revised:2021-12-16 Accepted:2021-12-31 Online:2022-03-16 Published:2022-03-21
Contact: Yuan-Tao Zhang, Yang Liu E-mail:zhangyt@jlu.edu.cn;liuy69@mail.sysu.edu.cn
Supported by:
Project supported by the Key Research and Development Program of Guangdong Province, China (Grant No. 2020B010174003).

摘要/Abstract

摘要： The strong polarization effect of GaN-based materials is widely used in high-performance devices such as white-light-emitting diodes (white LEDs), high electron mobility transistors (HEMTs), and GaN polarization superjunctions. However, the current researches on the polarization mechanism of GaN-based materials are not sufficient. In this paper, we studied the influence of polarization on electric field and energy band characteristics of Ga-face GaN bulk materials by using a combination of theoretical analysis and semiconductor technology computer-aided design (TCAD) simulation. The self-screening effect in Ga-face bulk GaN under ideal and non-ideal conditions is studied respectively. We believe that the formation of high-density two-dimensional electron gas (2DEG) in GaN is the accumulation of screening charges. We also clarify the source and accumulation of the screening charges caused by the GaN self-screening effect in this paper and aim to guide the design and optimization of high-performance GaN-based devices.

关键词: gallium nitride, polarized electric field, self-screening effect, surface states, donor doping, intrinsic thermal excitation

Abstract: The strong polarization effect of GaN-based materials is widely used in high-performance devices such as white-light-emitting diodes (white LEDs), high electron mobility transistors (HEMTs), and GaN polarization superjunctions. However, the current researches on the polarization mechanism of GaN-based materials are not sufficient. In this paper, we studied the influence of polarization on electric field and energy band characteristics of Ga-face GaN bulk materials by using a combination of theoretical analysis and semiconductor technology computer-aided design (TCAD) simulation. The self-screening effect in Ga-face bulk GaN under ideal and non-ideal conditions is studied respectively. We believe that the formation of high-density two-dimensional electron gas (2DEG) in GaN is the accumulation of screening charges. We also clarify the source and accumulation of the screening charges caused by the GaN self-screening effect in this paper and aim to guide the design and optimization of high-performance GaN-based devices.

Key words: gallium nitride, polarized electric field, self-screening effect, surface states, donor doping, intrinsic thermal excitation

中图分类号: (III-V semiconductors)

71.55.Eq

71.23.An (Theories and models; localized states)

Qiu-Ling Qiu(丘秋凌), Shi-Xu Yang(杨世旭), Qian-Shu Wu(吴千树), Cheng-Lang Li(黎城朗), Qi Zhang(张琦), Jin-Wei Zhang(张津玮), Zhen-Xing Liu(刘振兴), Yuan-Tao Zhang(张源涛), and Yang Liu(刘扬). Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] direction[J]. 中国物理B, 2022, 31(4): 47103-047103.

参考文献

[1] Ambacher O, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Schaff W J and Eastman L F 1999 J. Appl. Phys. 85 3222
[2] Chaudhuri R, Bader S J, Chen Z, Muller D A, Xing H G and Jena D 2019 Science 365 1454
[3] Simon J, Protasenko V, Lian C, Xing H and Jena D 2010 Science 327 60
[4] Chu R, Cao Y, Chen M, Li R and Zehnder D 2016 IEEE Electron Dev. Lett. 37 269
[5] Zhou Q, Wei D, Zhu R P, et al. 2018 Superlattices & Microstructures 122 85
[6] Zhang J L, He L, Li L A, Ni Y Q, Que T T, Liu Z X, Wang W J, Zheng J X, Huang Y F, Chen J, Gu X, Zhao Y W, He L, Wu Z S and Liu Y 2018 IEEE Electron Dev. Lett. 39 1720
[7] Zhang Y T, Deng G Q, Yu Y, Wang Y, Zhao D G, Shi Z F, Zhang B L and Li X H 2020 ACS Photon. 7 1723
[8] Unni V, Long H, Sweet M, Balachandran A, Narayanan E M S, Nakajima A and Kawai H 2014 IEEE 26th ISPSD, June 15-19, 2014, Waikoloa, Hawaii, p. 245
[9] Zhang Z H, Liu W, Ju Z, Tan S T, Ji Y, Kyaw Z, Zhang X L, Wang L C, Sun X W and Demir H V 2014 Appl. Phys. Lett. 104 243501
[10] Mishra U K and Singh J 2008 Semiconductor device physics and design (Netherlands:Springer), pp. 388-392
[11] Bernardini F, Fiorentini V and Vanderbilt D 1997 Phys. Rev. B 56 10024
[12] Lahréche H, Vennégués P, Tottereau O, Laügt M, Lorenzini P, Leroux M, Beaumont B and Gibart P 2000 J. Crystal Growth 217 13
[13] Korbutowicz R, Dumiszewska E and Prażmowska J 2007 Crystal Research and Technology 42 1297
[14] Popovici G, Kim W, Botchkarev A, Tang H P and Morkoç H 1997 Appl. Phys. Lett. 71 3385
[15] Koleske D D, Wickenden A E, Henry R L and Twigg M E 2002 J. Crystal Growth 242 55
[16] Nakamura S, Mukai T and Senoh M 1992 Jpn. J. Appl. Phys. 31 2883
[17] Slack G A, Schowalter L J, Morelli D and Freitas J A Jr 2002 J. Crystal Growth 246 287
[18] Zywietz T K, Neugebauer J and Scheffler M 1999 Appl. Phys. Lett. 74 1695
[19] Smorchkova I P, Elsass C R, Ibbetson J P, Vetury R, Heying B, Fini P, Haus E, DenBaars S P, Speck J S and Mishra U K 1999 J. Appl. Phys. 86 4520
[20] Boguslawski P, Briggs E L and Bernholc J 1995 Phys. Rev. B 51 17255
[21] Nidhi, Rajan S, Keller S, Wu F, DenBaars S P, Speck J S and Mishra U K 2008 J. Appl. Phys. 103 124508
[22] Freitas Jr. J A, Moore W J, Shanabrook B V, Braga G C B, Koleske D D, Lee S K, Park S S and Han J Y 2003 Phys. Stat. Sol. (b) 240 330

Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] direction

Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] direction

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Mei-Ling Lu(卢美玲), Yao Wang(王瑶), He-Zhi Zhang(张鹤之), Hao-Lin Chen(陈昊林), Tian-Yuan Cui(崔天元), and Xi Luo(罗熙). Chiral symmetry protected topological nodal superconducting phase and Majorana Fermi arc[J]. 中国物理B, 2023, 32(2): 27301-027301.
[2]	Yuefei Cai(蔡月飞), Jie Bai(白洁), and Tao Wang(王涛). Review of a direct epitaxial approach to achieving micro-LEDs[J]. 中国物理B, 2023, 32(1): 18508-018508.
[3]	Geng Li(李更), Shiyu Zhu(朱诗雨), Peng Fan(范朋), Lu Cao(曹路), and Hong-Jun Gao(高鸿钧). Exploring Majorana zero modes in iron-based superconductors[J]. 中国物理B, 2022, 31(8): 80301-080301.
[4]	Zheng-Zhao Lin(林正兆), Ling Lü(吕玲), Xue-Feng Zheng(郑雪峰), Yan-Rong Cao(曹艳荣), Pei-Pei Hu(胡培培), Xin Fang(房鑫), and Xiao-Hua Ma(马晓华). Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors[J]. 中国物理B, 2022, 31(3): 36103-036103.
[5]	Tongyao Wu(吴桐尧), Hongyuan Wang(王洪远), Yuanyuan Yang(杨媛媛), Shaofeng Duan(段绍峰), Chaozhi Huang(黄超之), Tianwei Tang(唐天威), Yanfeng Guo(郭艳峰), Weidong Luo(罗卫东), and Wentao Zhang(张文涛). Determination of the surface states from the ultrafast electronic states in a thermoelectric material[J]. 中国物理B, 2022, 31(2): 27902-027902.
[6]	Mingchen Hou(侯明辰), Gang Xie(谢刚), Qing Guo(郭清), and Kuang Sheng(盛况). Protection of isolated and active regions in AlGaN/GaN HEMTs using selective laser annealing[J]. 中国物理B, 2021, 30(9): 97302-097302.
[7]	Yue-Bo Liu(柳月波), Hong-Hui Liu(刘红辉), Jun-Yu Shen(沈俊宇), Wan-Qing Yao(姚婉青), Feng-Ge Wang(王风格), Yuan Ren(任远), Min-Jie Zhang(张敏杰), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬), and Bai-Jun Zhang(张佰君). Distribution of donor states on the surfaceof AlGaN/GaN heterostructures[J]. 中国物理B, 2021, 30(12): 128102-128102.
[8]	Yue-Bo Liu(柳月波), Jun-Yu Shen(沈俊宇), Jie-Ying Xing(邢洁莹), Wan-Qing Yao(姚婉青), Hong-Hui Liu(刘红辉), Ya-Qiong Dai(戴雅琼), Long-Kun Yang(杨隆坤), Feng-Ge Wang(王风格), Yuan Ren(任远), Min-Jie Zhang(张敏杰), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬), and Bai-Jun Zhang(张佰君). Abnormal phenomenon of source-drain current of AlGaN/GaN heterostructure device under UV/visible light irradiation[J]. 中国物理B, 2021, 30(11): 117302-117302.
[9]	阙陶陶, 赵亚文, 李柳暗, 何亮, 丘秋凌, 刘振兴, 张津玮, 陈佳, 吴志盛, 刘扬. Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiN_x gate dielectric[J]. 中国物理B, 2020, 29(3): 37201-037201.
[10]	张腾, 李岗, 孙淑翠, 秦娜, 康璐, 姚淑华, 翁红明, S K Mo, 李璐, 柳仲楷, 杨乐仙, 陈宇林. Electronic structure of correlated topological insulator candidate YbB₆ studied by photoemission and quantum oscillation[J]. 中国物理B, 2020, 29(1): 17304-017304.
[11]	吉雪, 董文秀, 张育民, 王建峰, 徐科. Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates[J]. 中国物理B, 2019, 28(6): 67701-067701.
[12]	田志锋, 徐鹏, 余耀, 孙建东, 冯伟, 丁青峰, 孟占伟, 李想, 蔡金华, 郑中信, 李欣幸, 靳琳, 秦华, 孙云飞. Responsivity and noise characteristics of AlGaN/GaN-HEMT terahertz detectors at elevated temperatures[J]. 中国物理B, 2019, 28(5): 58501-058501.
[13]	侯明辰, 谢刚, 盛况. Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing[J]. 中国物理B, 2019, 28(3): 37302-037302.
[14]	刘三姐, 何荧峰, 卫会云, 仇鹏, 宋祎萌, 安运来, 阿布度, 拉赫曼, 彭铭曾, 郑新和. PEALD-deposited crystalline GaN films on Si (100) substrates with sharp interfaces[J]. 中国物理B, 2019, 28(2): 26801-026801.
[15]	程立文, 马剑, 曹常锐, 徐作政, 兰天, 杨金彭, 陈海涛, 于洪岩, 吴曙东, 尧舜, 曾祥华, 徐仔全. Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers[J]. 中国物理B, 2018, 27(8): 88504-088504.