Temporal response of laminated graded-bandgap GaAs-based photocathode with distributed Bragg reflection structure: Model and simulation

doi:10.1088/1674-1056/ac6334

中国物理B ›› 2022, Vol. 31 ›› Issue (9): 98505-098505.doi: 10.1088/1674-1056/ac6334

Temporal response of laminated graded-bandgap GaAs-based photocathode with distributed Bragg reflection structure: Model and simulation

Zi-Heng Wang(王自衡)¹, Yi-Jun Zhang(张益军)^1,†, Shi-Man Li(李诗曼)¹, Shan Li(李姗)¹, Jing-Jing Zhan(詹晶晶)¹, Yun-Sheng Qian(钱芸生)¹, Feng Shi(石峰)^2,‡, Hong-Chang Cheng(程宏昌)², Gang-Cheng Jiao(焦岗成)², and Yu-Gang Zeng(曾玉刚)³

1 School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;
2 National Key Laboratory of Science and Technology on Low-Level-Light, Xi'an 710065, China;
3 Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

收稿日期:2021-12-10 修回日期:2022-03-15 接受日期:2022-04-01 出版日期:2022-08-19 发布日期:2022-08-30
通讯作者: Yi-Jun Zhang, Feng Shi E-mail:zhangyijun423@126.com;shfyf@126.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. U2141239 and 61771245) and the Fund from the Science and Technology on Low-Light-Level Night Vision Laboratory of China (Grant No. J20200102).

Temporal response of laminated graded-bandgap GaAs-based photocathode with distributed Bragg reflection structure: Model and simulation

1 School of Electronic and Optical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;
2 National Key Laboratory of Science and Technology on Low-Level-Light, Xi'an 710065, China;
3 Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

Received:2021-12-10 Revised:2022-03-15 Accepted:2022-04-01 Online:2022-08-19 Published:2022-08-30
Contact: Yi-Jun Zhang, Feng Shi E-mail:zhangyijun423@126.com;shfyf@126.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. U2141239 and 61771245) and the Fund from the Science and Technology on Low-Light-Level Night Vision Laboratory of China (Grant No. J20200102).

摘要/Abstract

摘要： To describe the dynamic response characteristics of the laminated graded-bandgap GaAs-based photocathode with distributed Bragg reflection structure, a general theoretical temporal response model is deduced by combining the unsteady continuity equation and numerical calculation method. Through the model, the contribution of the distribution Bragg reflection structure and graded-bandgap emission layer to the temporal response are investigated. Meanwhile, the relationships between the temporal response characteristics of the laminated GaAs-based photocathode and different structural parameters are also analyzed, including average electron decay time, emission layer thickness, and incident light wavelength. It is found that the introduction of distribution Bragg reflection (DBR) layer solves the discrepancy between the absorption capability of the emission layer and the temporal response. Moreover, the distributed Bragg reflection layer can improve the time response by optimizing the initial photoelectron distribution. The improvement effect of the DBR layer on the temporal response is enhanced with the emission layer thickness decreasing or the incident light wavelength increasing. These results explain the effect of the DBR layer of the photocathode on the dynamic characteristics, which can offer a new insight into the dynamic research of GaAs-based photocathode.

关键词: temporal response, GaAs-based photocathode, distribution Bragg reflection, graded-bandgap

Abstract: To describe the dynamic response characteristics of the laminated graded-bandgap GaAs-based photocathode with distributed Bragg reflection structure, a general theoretical temporal response model is deduced by combining the unsteady continuity equation and numerical calculation method. Through the model, the contribution of the distribution Bragg reflection structure and graded-bandgap emission layer to the temporal response are investigated. Meanwhile, the relationships between the temporal response characteristics of the laminated GaAs-based photocathode and different structural parameters are also analyzed, including average electron decay time, emission layer thickness, and incident light wavelength. It is found that the introduction of distribution Bragg reflection (DBR) layer solves the discrepancy between the absorption capability of the emission layer and the temporal response. Moreover, the distributed Bragg reflection layer can improve the time response by optimizing the initial photoelectron distribution. The improvement effect of the DBR layer on the temporal response is enhanced with the emission layer thickness decreasing or the incident light wavelength increasing. These results explain the effect of the DBR layer of the photocathode on the dynamic characteristics, which can offer a new insight into the dynamic research of GaAs-based photocathode.

Key words: temporal response, GaAs-based photocathode, distribution Bragg reflection, graded-bandgap

中图分类号: (Photomultipliers; phototubes and photocathodes)

85.60.Ha

71.55.Eq (III-V semiconductors) 72.10.Bg (General formulation of transport theory) 79.60.-i (Photoemission and photoelectron spectra)

Zi-Heng Wang(王自衡), Yi-Jun Zhang(张益军), Shi-Man Li(李诗曼), Shan Li(李姗), Jing-Jing Zhan(詹晶晶), Yun-Sheng Qian(钱芸生), Feng Shi(石峰), Hong-Chang Cheng(程宏昌), Gang-Cheng Jiao(焦岗成), and Yu-Gang Zeng(曾玉刚). Temporal response of laminated graded-bandgap GaAs-based photocathode with distributed Bragg reflection structure: Model and simulation[J]. 中国物理B, 2022, 31(9): 98505-098505.

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Temporal response of laminated graded-bandgap GaAs-based photocathode with distributed Bragg reflection structure: Model and simulation

Temporal response of laminated graded-bandgap GaAs-based photocathode with distributed Bragg reflection structure: Model and simulation

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