Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal

doi:10.1088/1674-1056/28/5/057102

中国物理B ›› 2019, Vol. 28 ›› Issue (5): 57102-057102.doi: 10.1088/1674-1056/28/5/057102

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal

Ding Yu(余丁), Guiying Shen(沈桂英), Hui Xie(谢辉), Jingming Liu(刘京明), Jing Sun(孙静), Youwen Zhao(赵有文)

1 Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2019-01-25 修回日期:2019-02-28 出版日期:2019-05-05 发布日期:2019-05-05
通讯作者: Youwen Zhao E-mail:zhaoyw@semi.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61474104 and 61504131).

Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal

Ding Yu(余丁)^1,2, Guiying Shen(沈桂英)¹, Hui Xie(谢辉)¹, Jingming Liu(刘京明)¹, Jing Sun(孙静)^1,2, Youwen Zhao(赵有文)^1,3

1 Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Received:2019-01-25 Revised:2019-02-28 Online:2019-05-05 Published:2019-05-05
Contact: Youwen Zhao E-mail:zhaoyw@semi.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61474104 and 61504131).

摘要/Abstract

摘要：

Te-doped GaSb single crystal grown by the liquid encapsulated Czochralski (LEC) method exhibits a lag of compensating progress and a maximum carrier concentration around 8×10¹⁷ cm^-3. The reason for this phenomenon has been investigated by a quantity concentration evaluation of the Te donor and native acceptor. The results of glow discharge mass spectrometry (GDMS) and Hall measurement suggest that the acceptor concentration increases with the increase of Te doping concentration, resulting in the enhancement of electrical compensation and free electron concentration reduction. The acceptor concentration variation is further demonstrated by photoluminescence spectra and explained by the principle of Fermi level dependent defect formation energy.

关键词: GaSb, defect compensation, Hall effect measurement, photoluminescence spectroscopy

Abstract:

Key words: GaSb, defect compensation, Hall effect measurement, photoluminescence spectroscopy

中图分类号: (III-V semiconductors)

71.55.Eq

78.55.Cr (III-V semiconductors) 81.05.Ea (III-V semiconductors) 81.70.Jb (Chemical composition analysis, chemical depth and dopant profiling)

余丁, 沈桂英, 谢辉, 刘京明, 孙静, 赵有文. Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal[J]. 中国物理B, 2019, 28(5): 57102-057102.

Ding Yu(余丁), Guiying Shen(沈桂英), Hui Xie(谢辉), Jingming Liu(刘京明), Jing Sun(孙静), Youwen Zhao(赵有文). Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal[J]. Chin. Phys. B, 2019, 28(5): 57102-057102.

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Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal

Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal

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