中国物理B ›› 2016, Vol. 25 ›› Issue (10): 107106-107106.doi: 10.1088/1674-1056/25/10/107106
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Yuan-Gang Wang(王元刚), Zhi-Hong Feng(冯志红), Yuan-Jie Lv(吕元杰), Xin Tan(谭鑫), Shao-Bo Dun(敦少博), Yu-Long Fang(房玉龙), Shu-Jun Cai(蔡树军)
Yuan-Gang Wang(王元刚), Zhi-Hong Feng(冯志红), Yuan-Jie Lv(吕元杰), Xin Tan(谭鑫), Shao-Bo Dun(敦少博), Yu-Long Fang(房玉龙), Shu-Jun Cai(蔡树军)
摘要: It has been reported that the gate leakage currents are described by Frenkel-Poole emission (FPE) model, at the temperatures higher than 250 K. However, the gate leakage currents of our passivated devices do not accord with the FPE model. Therefore, a modified FPE model is developed in which an additional leakage current, besides the gate (III), is added. Based on the samples with different passivations, the III caused by a large number of surface traps is separated from total gate currents, and is found to be linear with respect to (φB-Vg)0.5. Compared with these from the FPE model, the calculated results from the modified model agree well with the Ig-Vg measurements at temperatures ranging from 295 K to 475 K.
中图分类号: (III-V semiconductors)