中国物理B ›› 2016, Vol. 25 ›› Issue (10): 107201-107201.doi: 10.1088/1674-1056/25/10/107201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

The spin Hall effect in single-crystalline gold thin films

Dai Tian(田岱), Caigan Chen(陈才干), Hua Wang(王华), Xiaofeng Jin(金晓峰)   

  1. 1 State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China;
    2 Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China
  • 收稿日期:2016-05-26 修回日期:2016-05-31 出版日期:2016-10-05 发布日期:2016-10-05
  • 通讯作者: Xiaofeng Jin E-mail:xfjin@fudan.edu.cn
  • 基金资助:

    Project supported by the National Basic Research Program of China (Grant Nos. 2015CB921400 and 2011CB921802) and the National Natural Science Foundation of China (Grant Nos. 11374057, 11434003, and 11421404).

The spin Hall effect in single-crystalline gold thin films

Dai Tian(田岱)1,2, Caigan Chen(陈才干)1,2, Hua Wang(王华)1,2, Xiaofeng Jin(金晓峰)1,2   

  1. 1 State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China;
    2 Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China
  • Received:2016-05-26 Revised:2016-05-31 Online:2016-10-05 Published:2016-10-05
  • Contact: Xiaofeng Jin E-mail:xfjin@fudan.edu.cn
  • Supported by:

    Project supported by the National Basic Research Program of China (Grant Nos. 2015CB921400 and 2011CB921802) and the National Natural Science Foundation of China (Grant Nos. 11374057, 11434003, and 11421404).

摘要:

The spin Hall effect has been investigated in 10-nm-thick epitaxial Au (001) single crystal films via H-pattern devices, whose minimum characteristic dimension is about 40 nm. By improving the film quality and optimizing the in-plane geometry parameters of the devices, we explicitly extract the spin Hall effect contribution from the ballistic and bypass contribution which were previously reported to be dominating the non-local voltage. Furthermore, we calculate a lower limit of the spin Hall angle of 0.08 at room temperature. Our results indicate that the giant spin Hall effect in Au thin films is dominated not by the interior defects scattering, but by the surface scattering. Besides, our results also provide an additional experimental method to determine the magnitude of spin Hall angle unambiguously.

关键词: gold thin film, spin Hall effect, surface scattering

Abstract:

The spin Hall effect has been investigated in 10-nm-thick epitaxial Au (001) single crystal films via H-pattern devices, whose minimum characteristic dimension is about 40 nm. By improving the film quality and optimizing the in-plane geometry parameters of the devices, we explicitly extract the spin Hall effect contribution from the ballistic and bypass contribution which were previously reported to be dominating the non-local voltage. Furthermore, we calculate a lower limit of the spin Hall angle of 0.08 at room temperature. Our results indicate that the giant spin Hall effect in Au thin films is dominated not by the interior defects scattering, but by the surface scattering. Besides, our results also provide an additional experimental method to determine the magnitude of spin Hall angle unambiguously.

Key words: gold thin film, spin Hall effect, surface scattering

中图分类号:  (Electronic conduction in metals and alloys)

  • 72.15.-v
85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)