In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

doi:10.1088/1674-1056/ab7746

中国物理B ›› 2020, Vol. 29 ›› Issue (4): 47104-047104.doi: 10.1088/1674-1056/ab7746

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

Min-Han Mi(宓珉瀚), Sheng Wu(武盛), Ling Yang(杨凌), Yun-Long He(何云龙), Bin Hou(侯斌), Meng Zhang(张濛), Li-Xin Guo(郭立新), Xiao-Hua Ma(马晓华), Yue Hao(郝跃)

1 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
3 School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China

收稿日期:2020-02-04 修回日期:2020-02-14 出版日期:2020-04-05 发布日期:2020-04-05
通讯作者: Min-Han Mi E-mail:miminhan@qq.com
基金资助:
Project supported by the China Postdoctoral Science Foundation (Grant No. 2018M640957), the Fundamental Research Funds for the Central Universities, China (Grant No. 20101196761), the National Natural Science Foundation of China (Grant No. 61904135), and the National Defense Pre-Research Foundation of China (Grant No. 31513020307).

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

Min-Han Mi(宓珉瀚)¹, Sheng Wu(武盛)¹, Ling Yang(杨凌)², Yun-Long He(何云龙)¹, Bin Hou(侯斌)¹, Meng Zhang(张濛)¹, Li-Xin Guo(郭立新)³, Xiao-Hua Ma(马晓华)¹, Yue Hao(郝跃)¹

1 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
3 School of Physics and Optoelectronic Engineering, Xidian University, Xi'an 710071, China

Received:2020-02-04 Revised:2020-02-14 Online:2020-04-05 Published:2020-04-05
Contact: Min-Han Mi E-mail:miminhan@qq.com
Supported by:
Project supported by the China Postdoctoral Science Foundation (Grant No. 2018M640957), the Fundamental Research Funds for the Central Universities, China (Grant No. 20101196761), the National Natural Science Foundation of China (Grant No. 61904135), and the National Defense Pre-Research Foundation of China (Grant No. 31513020307).

摘要/Abstract

摘要： The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications. The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier. F-based etching can be self-terminated after removing SiN, leaving the AlGaN barrier in the gate region. With this in-situ SiN and thin barrier etch-stop structure, the short channel effect can be suppressed, meanwhile achieving highly precisely controlled and low damage etching process. The device shows a maximum drain current of 1022 mA/mm, a peak transconductance of 459 mS/mm, and a maximum oscillation frequency (f_max) of 248 GHz.

关键词: AlGaN/GaN, in-situ SiN, etch-stop barrier

Abstract: The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications. The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier. F-based etching can be self-terminated after removing SiN, leaving the AlGaN barrier in the gate region. With this in-situ SiN and thin barrier etch-stop structure, the short channel effect can be suppressed, meanwhile achieving highly precisely controlled and low damage etching process. The device shows a maximum drain current of 1022 mA/mm, a peak transconductance of 459 mS/mm, and a maximum oscillation frequency (f_max) of 248 GHz.

Key words: AlGaN/GaN, in-situ SiN, etch-stop barrier

中图分类号: (III-V semiconductors)

71.55.Eq

73.20.-r (Electron states at surfaces and interfaces) 73.50.-h (Electronic transport phenomena in thin films)

宓珉瀚, 武盛, 杨凌, 何云龙, 侯斌, 张濛, 郭立新, 马晓华, 郝跃. In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT[J]. 中国物理B, 2020, 29(4): 47104-047104.

Min-Han Mi(宓珉瀚), Sheng Wu(武盛), Ling Yang(杨凌), Yun-Long He(何云龙), Bin Hou(侯斌), Meng Zhang(张濛), Li-Xin Guo(郭立新), Xiao-Hua Ma(马晓华), Yue Hao(郝跃). In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT[J]. Chin. Phys. B, 2020, 29(4): 47104-047104.

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In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

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