中国物理B ›› 2021, Vol. 30 ›› Issue (10): 108502-108502.doi: 10.1088/1674-1056/ac1efd
Impact of oxygen in electrical properties and hot-carrier stress-induced degradation of GaN high electron mobility transistors
Lixiang Chen(陈丽香)1,2,†, Min Ma(马敏)1, Jiecheng Cao(曹杰程)1, Jiawei Sun(孙佳惟)1, Miaoling Que(阙妙玲)1, and Yunfei Sun(孙云飞)1,2,‡
- 1 School of Electronic and Information Engineering, Suzhou University of Science and Technology, Suzhou 215009, China;
2 Tianping College of Suzhou University of Science and Technology, Suzhou 215009, China
Impact of oxygen in electrical properties and hot-carrier stress-induced degradation of GaN high electron mobility transistors
Lixiang Chen(陈丽香)1,2,†, Min Ma(马敏)1, Jiecheng Cao(曹杰程)1, Jiawei Sun(孙佳惟)1, Miaoling Que(阙妙玲)1, and Yunfei Sun(孙云飞)1,2,‡
- 1 School of Electronic and Information Engineering, Suzhou University of Science and Technology, Suzhou 215009, China;
2 Tianping College of Suzhou University of Science and Technology, Suzhou 215009, China
摘要： The role of the oxygen in AlGaN/GaN high electron mobility transistors (HEMTs) before and after semi-on state stress was discussed. Comparing with the electrical characteristics of the devices in vacuum, air, and oxygen atmosphere, it is revealed that the oxygen has significant influence on the electric characteristics and the hot-carrier-stress-induced degradation of the device. Comparing with the situation in vacuum, the gate leakage increased an order of magnitude in oxygen and air atmosphere. Double gate structure was used to separate the barrier leakage and surface leakage of AlGaN/GaN HEMT it is found that surface leakage is the major influencing factor in gate leakage of SiN-passivated devices before and after semi-on state stress. During semi-on state stress in the oxygen atmosphere, the electric-field-driven oxidation process promoted the oxidation of the nitride layer, and the oxidation layer in the SiN/AlGaN interface leads to the decreasing of the surface leakage.
中图分类号: (Field effect devices)
- 85.30.Tv