中国物理B ›› 2014, Vol. 23 ›› Issue (12): 127303-127303.doi: 10.1088/1674-1056/23/12/127303
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
石先龙a, 罗小蓉a b, 魏杰a, 谭桥a, 刘建平a, 徐青a, 李鹏程a, 田瑞超a, 马达a
Shi Xian-Long (石先龙)a, Luo Xiao-Rong (罗小蓉)a b, Wei Jie (魏杰)a, Tan Qiao (谭桥)a, Liu Jian-Ping (刘建平)a, Xu Qing (徐青)a, Li Peng-Cheng (李鹏程)a, Tian Rui-Chao (田瑞超)a, Ma Da (马达)a
摘要:
A novel lateral double-diffused metal–oxide semiconductor (LDMOS) with a high breakdown voltage (BV) and low specific on-resistance (Ron.sp) is proposed and investigated by simulation. It features a junction field plate (JFP) over the drift region and a partial N-buried layer (PNB) in the P-substrate. The JFP not only smoothes the surface electric field (E-field), but also brings in charge compensation between the JFP and the N-drift region, which increases the doping concentration of the N-drift region. The PNB reshapes the equipotential contours, and thus reduces the E-field peak on the drain side and increases that on the source side. Moreover, the PNB extends the depletion width in the substrate by introducing an additional vertical diode, resulting in a significant improvement on the vertical BV. Compared with the conventional LDMOS with the same dimensional parameters, the novel LDMOS has an increase in BV value by 67.4%, and a reduction in Ron.sp by 45.7% simultaneously.
中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))