Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H–SiC contacts

doi:10.1088/1674-1056/23/12/127302

中国物理B ›› 2014, Vol. 23 ›› Issue (12): 127302-127302.doi: 10.1088/1674-1056/23/12/127302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H–SiC contacts

韩林超^a, 申华军^a, 刘可安^b, 王弋宇^a, 汤益丹^a, 白云^a, 许恒宇^a, 吴煜东^b, 刘新宇^a

a Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
b Zhuzhou CSR Times Electric Co., Ltd, Zhuzhou 412001, China

收稿日期:2014-04-02 修回日期:2014-07-09 出版日期:2014-12-15 发布日期:2014-12-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61106080 and 61275042) and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2013ZX02305).

Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H–SiC contacts

Han Lin-Chao (韩林超)^a, Shen Hua-Jun (申华军)^a, Liu Ke-An (刘可安)^b, Wang Yi-Yu (王弋宇)^a, Tang Yi-Dan (汤益丹)^a, Bai Yun (白云)^a, Xu Heng-Yu (许恒宇)^a, Wu Yu-Dong (吴煜东)^b, Liu Xin-Yu (刘新宇)^a

a Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
b Zhuzhou CSR Times Electric Co., Ltd, Zhuzhou 412001, China

Received:2014-04-02 Revised:2014-07-09 Online:2014-12-15 Published:2014-12-15
Contact: Shen Hua-Jun E-mail:shenhuajun@ime.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61106080 and 61275042) and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2013ZX02305).

摘要/Abstract

摘要： Tung's model was used to analyze anomalies observed in Ti/SiC Schottky contacts. The degree of the inhomogeneous Schottky barrier after annealing at different temperatures is characterized by the 'T₀ anomaly' and the difference (ΔФ) between the uniformly high barrier height (Ф_B⁰) and the effective barrier height (Ф_B^eff). Those two parameters of Ti Schottky contacts on 4H–SiC were deduced from I–V measurements in the temperature range of 298 K–503 K. The increase in Schottky barrier (SB) height (Ф_B) and decrease in the ideality factor (n) with an increase measurement temperature indicate the presence of an inhomogeneous SB. The degree of inhomogeneity of the Schottky barrier depends on the annealing temperature, and it is at its lowest for 500-℃ thermal treatment. The degree of inhomogeneity of the SB could reveal effects of thermal treatments on Schottky contacts in other aspects.

关键词: Schottky contact, SiC, inhomogeneity barrier

Abstract: Tung's model was used to analyze anomalies observed in Ti/SiC Schottky contacts. The degree of the inhomogeneous Schottky barrier after annealing at different temperatures is characterized by the 'T₀ anomaly' and the difference (ΔФ) between the uniformly high barrier height (Ф_B⁰) and the effective barrier height (Ф_B^eff). Those two parameters of Ti Schottky contacts on 4H–SiC were deduced from I–V measurements in the temperature range of 298 K–503 K. The increase in Schottky barrier (SB) height (Ф_B) and decrease in the ideality factor (n) with an increase measurement temperature indicate the presence of an inhomogeneous SB. The degree of inhomogeneity of the Schottky barrier depends on the annealing temperature, and it is at its lowest for 500-℃ thermal treatment. The degree of inhomogeneity of the SB could reveal effects of thermal treatments on Schottky contacts in other aspects.

Key words: Schottky contact, SiC, inhomogeneity barrier

中图分类号: (Metal-nonmetal contacts)

73.40.Ns

韩林超, 申华军, 刘可安, 王弋宇, 汤益丹, 白云, 许恒宇, 吴煜东, 刘新宇. Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H–SiC contacts[J]. 中国物理B, 2014, 23(12): 127302-127302.

Han Lin-Chao (韩林超), Shen Hua-Jun (申华军), Liu Ke-An (刘可安), Wang Yi-Yu (王弋宇), Tang Yi-Dan (汤益丹), Bai Yun (白云), Xu Heng-Yu (许恒宇), Wu Yu-Dong (吴煜东), Liu Xin-Yu (刘新宇). Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H–SiC contacts[J]. Chin. Phys. B, 2014, 23(12): 127302-127302.

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Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H–SiC contacts

Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H–SiC contacts

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