Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain–source current correction method

doi:10.1088/1674-1056/23/12/127304

›› 2014, Vol. 23 ›› Issue (12): 127304-127304.doi: 10.1088/1674-1056/23/12/127304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain–source current correction method

林体元, 庞磊, 袁婷婷, 刘新宇

Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2014-06-19 修回日期:2014-07-24 发布日期:2014-12-25
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61204086).

Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain–source current correction method

Pongthavornkamol Tiwat (林体元), Pang Lei (庞磊), Yuan Ting-Ting (袁婷婷), Liu Xin-Yu (刘新宇)

Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2014-06-19 Revised:2014-07-24 Published:2014-12-25
Contact: Pongthavornkamol Tiwat E-mail:lintiyuan@ime.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61204086).

摘要/Abstract

摘要： A new modified Angelov current–voltage characteristic model equation is proposed to improve the drain–source current (I_ds) simulation of an AlGaN/GaN-based (gallium nitride) high electron mobility transistor (AlGaN/GaN-based HEMT) at high power operation. Since an accurate radio frequency (RF) current simulation is critical for a correct power simulation of the device, in this paper we propose a method of AlGaN/GaN high electron mobility transistor (HEMT) nonlinear large-signal model extraction with a supplemental modeling of RF drain–source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency (PAE) at class-AB quiescent bias of V_gs= -3.5 V, V_ds= 30 V with a frequency of 9.6 GHz are presented.

关键词: AlGaN/GaN HEMT, RF drain–, source current, RF dispersion effect, power-added efficiency

Abstract: A new modified Angelov current–voltage characteristic model equation is proposed to improve the drain–source current (I_ds) simulation of an AlGaN/GaN-based (gallium nitride) high electron mobility transistor (AlGaN/GaN-based HEMT) at high power operation. Since an accurate radio frequency (RF) current simulation is critical for a correct power simulation of the device, in this paper we propose a method of AlGaN/GaN high electron mobility transistor (HEMT) nonlinear large-signal model extraction with a supplemental modeling of RF drain–source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency (PAE) at class-AB quiescent bias of V_gs= -3.5 V, V_ds= 30 V with a frequency of 9.6 GHz are presented.

Key words: AlGaN/GaN HEMT, RF drain–source current, RF dispersion effect, power-added efficiency

中图分类号: (III-V semiconductors)

73.61.Ey

85.30.De (Semiconductor-device characterization, design, and modeling) 85.40.Bh (Computer-aided design of microcircuits; layout and modeling) 84.40.-x (Radiowave and microwave (including millimeter wave) technology)

林体元, 庞磊, 袁婷婷, 刘新宇. Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain–source current correction method[J]. , 2014, 23(12): 127304-127304.

Pongthavornkamol Tiwat (林体元), Pang Lei (庞磊), Yuan Ting-Ting (袁婷婷), Liu Xin-Yu (刘新宇). Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain–source current correction method[J]. Chin. Phys. B, 2014, 23(12): 127304-127304.

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Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain–source current correction method

Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain–source current correction method

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