中国物理B ›› 2011, Vol. 20 ›› Issue (12): 127303-127303.doi: 10.1088/1674-1056/20/12/127303
徐征1, 赵谡玲1, 尹飞飞1, 陈跃宁2, 张成文3, 焦碧媛3, 董宇航3
Chen Yue-Ning(陈跃宁)a)b)c), Xu Zheng(徐征) a)b)†, Zhao Su-Ling(赵谡玲)a)b), Yin Fei-Fei(尹飞飞)a)b), Zhang Cheng-Wen(张成文) c), Jiao Bi-Yuan(焦碧媛)c), and Dong Yu-Hang (董宇航) c)
摘要: In this article, an organic thin-film field-effect transistor (OTFFET) with top-gate and bottom-contact geometry based on pentacene as the active layer is fabricated. The experimental data of the I-V are obtained from the OTFFET device. The alternating-current (AC) resistance value of the OTFFET device is calculated using the derivation method from the experimental data, and the AC resistance trend curves of the OTFFET device are obtained with the region fitting method. We analyse the characteristics of the OTFFET device with an AC resistance trend curve. To discover whether it has a high resistance, it is proposed to judge the region of the source/drain voltage (VDS) less than the transition voltage, thereby determining whether the contact between the metal electrode and the organic semiconductor layer of the OTFFET device is Ohmic or non-Ohmic. The theoretical analysis shows that the field-effect mobility and the AC resistance are in reverse proportion. Therefore, we point out that reducing AC resistance is necessary if field-effect mobility is to be improved.
中图分类号: (Contact resistance, contact potential)