Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC

doi:10.1088/1674-1056/24/12/126801

中国物理B ›› 2015, Vol. 24 ›› Issue (12): 126801-126801.doi: 10.1088/1674-1056/24/12/126801

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC

周天宇^{a b}, 刘学超^a, 黄维^a, 卓世异^a, 郑燕青^a, 施尔畏^a

a Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;
b Graduate University of Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2015-04-21 修回日期:2015-07-28 出版日期:2015-12-05 发布日期:2015-12-05
通讯作者: Liu Xue-Chao E-mail:xcliu@mail.sic.ac.cn
基金资助:
Project supported by the Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10), the Shanghai Rising-star Program, China (Grant No. 13QA1403800), the Industry-Academic Joint Technological Innovations Fund Project of Jiangsu Province, China (Grant No. BY2011119), and the National High-tech Research and Development Program of China (Grant Nos. 2013AA031603 and 2014AA032602).

Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC

Zhou Tian-Yu (周天宇)^{a b}, Liu Xue-Chao (刘学超)^a, Huang Wei (黄维)^a, Zhuo Shi-Yi (卓世异)^a, Zheng Yan-Qing (郑燕青)^a, Shi Er-Wei (施尔畏)^a

a Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China;
b Graduate University of Chinese Academy of Sciences, Beijing 100049, China

Received:2015-04-21 Revised:2015-07-28 Online:2015-12-05 Published:2015-12-05
Contact: Liu Xue-Chao E-mail:xcliu@mail.sic.ac.cn
Supported by:
Project supported by the Innovation Program of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10), the Shanghai Rising-star Program, China (Grant No. 13QA1403800), the Industry-Academic Joint Technological Innovations Fund Project of Jiangsu Province, China (Grant No. BY2011119), and the National High-tech Research and Development Program of China (Grant Nos. 2013AA031603 and 2014AA032602).

摘要/Abstract

摘要： A Ni/Ta bilayer is deposited on n-type 6H-SiC and then annealed at different temperatures to form an ohmic contact. The electrical properties are characterized by I-V curve measurement and the specific contact resistance is extracted by the transmission line method. The phase formation and microstructure of the Ni/Ta bilayer are studied after thermal annealing. The crystalline and microstructure properties are analyzed by using glance incident x-ray diffraction (GIXRD), Raman spectroscopy, and transmission electron microscopy. It is found that the transformation from the Schottky to the Ohmic occurs at 1050 ℃ and the GIXRD results show a distinct phase change from Ta₂C to TaC at this temperature. A specific contact resistance of 6.5× 10^-5Ω · cm² is obtained for sample Ni(80 nm)/Ta(20 nm)/6H-SiC after being annealed at 1050 ℃. The formation of the TaC phase is regarded as the main reason for the excellent Ohmic properties of the Ni/Ta contacts to 6H-SiC. Raman and TEM data reveal that the graphite carbon is drastically consumed by the Ta element, which can improve the contact thermal stability. A schematic diagram is proposed to illustrate the microstructural changes of Ni/Ta/6H-SiC when annealed at different temperatures.

关键词: SiC, Ohmic contact, Ni/Ta

Abstract: A Ni/Ta bilayer is deposited on n-type 6H-SiC and then annealed at different temperatures to form an ohmic contact. The electrical properties are characterized by I-V curve measurement and the specific contact resistance is extracted by the transmission line method. The phase formation and microstructure of the Ni/Ta bilayer are studied after thermal annealing. The crystalline and microstructure properties are analyzed by using glance incident x-ray diffraction (GIXRD), Raman spectroscopy, and transmission electron microscopy. It is found that the transformation from the Schottky to the Ohmic occurs at 1050 ℃ and the GIXRD results show a distinct phase change from Ta₂C to TaC at this temperature. A specific contact resistance of 6.5× 10^-5Ω · cm² is obtained for sample Ni(80 nm)/Ta(20 nm)/6H-SiC after being annealed at 1050 ℃. The formation of the TaC phase is regarded as the main reason for the excellent Ohmic properties of the Ni/Ta contacts to 6H-SiC. Raman and TEM data reveal that the graphite carbon is drastically consumed by the Ta element, which can improve the contact thermal stability. A schematic diagram is proposed to illustrate the microstructural changes of Ni/Ta/6H-SiC when annealed at different temperatures.

Key words: SiC, Ohmic contact, Ni/Ta

中图分类号: (Semiconductor surfaces)

68.47.Fg

73.40.Ns (Metal-nonmetal contacts)

周天宇, 刘学超, 黄维, 卓世异, 郑燕青, 施尔畏. Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC[J]. 中国物理B, 2015, 24(12): 126801-126801.

Zhou Tian-Yu (周天宇), Liu Xue-Chao (刘学超), Huang Wei (黄维), Zhuo Shi-Yi (卓世异), Zheng Yan-Qing (郑燕青), Shi Er-Wei (施尔畏). Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC[J]. Chin. Phys. B, 2015, 24(12): 126801-126801.

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Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC

Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC

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