Effect of the annealing temperature on the long-term thermal stability of Pt/Si/Ta/Ti/4H-SiC contacts

doi:10.1088/1674-1056/24/10/107303

中国物理B ›› 2015, Vol. 24 ›› Issue (10): 107303-107303.doi: 10.1088/1674-1056/24/10/107303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Effect of the annealing temperature on the long-term thermal stability of Pt/Si/Ta/Ti/4H-SiC contacts

程越, 赵高杰, 刘益宏, 孙玉俊, 王涛, 陈之战

Department of Physics, Shanghai Normal University, Shanghai 200234, China

收稿日期:2015-03-07 修回日期:2015-04-24 出版日期:2015-10-05 发布日期:2015-10-05
基金资助:
Project supported by the Special Prophase Project on the National Basic Research Program of China (Grant No. 2012CB326402), the National Natural Science Found of China (Grant No. 61404085), the Innovation Program of Shanghai Municipal Education Commission, China (Grant No. 13ZZ108), and the Shanghai Science and Technology Commission, China (Grant No. 13520502700).

Effect of the annealing temperature on the long-term thermal stability of Pt/Si/Ta/Ti/4H-SiC contacts

Cheng Yue (程越), Zhao Gao-Jie (赵高杰), Liu Yi-Hong (刘益宏), Sun Yu-Jun (孙玉俊), Wang Tao (王涛), Chen Zhi-Zhan (陈之战)

Department of Physics, Shanghai Normal University, Shanghai 200234, China

Received:2015-03-07 Revised:2015-04-24 Online:2015-10-05 Published:2015-10-05
Contact: Chen Zhi-Zhan E-mail:chenwbgs@126.com
Supported by:
Project supported by the Special Prophase Project on the National Basic Research Program of China (Grant No. 2012CB326402), the National Natural Science Found of China (Grant No. 61404085), the Innovation Program of Shanghai Municipal Education Commission, China (Grant No. 13ZZ108), and the Shanghai Science and Technology Commission, China (Grant No. 13520502700).

摘要/Abstract

摘要： The Pt/Si/Ta/Ti multilayer metal contacts on 4H-SiC are annealed in Ar atmosphere at 600 ℃-1100 ℃ by a rapid thermal processor (RTP). The long-term thermal stability is evaluated by aging the annealed contact at 600 ℃ in air. The contact's properties are determined by current-voltage measurement, and the specific contact resistance is calculated based on the transmission line model (TLM). Transmission electron microscope (TEM) and energy-dispersive x-ray spectrometry (EDX) are used to characterize the interface morphology, thickness, and composition. The results reveal that a higher annealing temperature is favorable for the formation of an Ohmic contact with a lower specific contact resistance, and causes the rapid degradation of the Ohmic contact in the aging process.

关键词: Ohmic contact, annealing temperature, thermal stability, interface morphology

Abstract: The Pt/Si/Ta/Ti multilayer metal contacts on 4H-SiC are annealed in Ar atmosphere at 600 ℃-1100 ℃ by a rapid thermal processor (RTP). The long-term thermal stability is evaluated by aging the annealed contact at 600 ℃ in air. The contact's properties are determined by current-voltage measurement, and the specific contact resistance is calculated based on the transmission line model (TLM). Transmission electron microscope (TEM) and energy-dispersive x-ray spectrometry (EDX) are used to characterize the interface morphology, thickness, and composition. The results reveal that a higher annealing temperature is favorable for the formation of an Ohmic contact with a lower specific contact resistance, and causes the rapid degradation of the Ohmic contact in the aging process.

Key words: Ohmic contact, annealing temperature, thermal stability, interface morphology

中图分类号: (Contact resistance, contact potential)

73.40.Cg

68.55.-a (Thin film structure and morphology)

程越, 赵高杰, 刘益宏, 孙玉俊, 王涛, 陈之战. Effect of the annealing temperature on the long-term thermal stability of Pt/Si/Ta/Ti/4H-SiC contacts[J]. 中国物理B, 2015, 24(10): 107303-107303.

Cheng Yue (程越), Zhao Gao-Jie (赵高杰), Liu Yi-Hong (刘益宏), Sun Yu-Jun (孙玉俊), Wang Tao (王涛), Chen Zhi-Zhan (陈之战). Effect of the annealing temperature on the long-term thermal stability of Pt/Si/Ta/Ti/4H-SiC contacts[J]. Chin. Phys. B, 2015, 24(10): 107303-107303.

参考文献 26

[1]	Jang T, Porter L M, Rutsch G W M and Odekirk B 2012 Appl. Phys. Lett. 75 3956
[2]	Buchholt K, Ghandi R, Domeij M, Zetterling C M and Lu J 2011 Appl. Phys. Lett. 98 042108
[3]	Eichfeld C M, Horsey M A, Mohney S E, Adedeji A V and Williams J R 2005 Thin Solid Films 485 207
[4]	Okojie R S, Evans L J, Lukco D and Morris J P 2010 IEEE Electron Dev. Lett. 31 791
[5]	MorkoçH, Strite S, Gao G B, Lin M E, Sverdlov B and Burns M 1994 J. Appl. Phys. 76 1363
[6]	Crofton J, Mc Mullin P G, Williams J R and Bozack M J 1995 J. Appl. Phys. 77 1317
[7]	Pecz B 2001 Appl. Surf. Sci. 184 287
[8]	Guo H, Zhang Y M, Qiao D Y, Sun L and Zhang Y M 2007 Chin. Phys. 16 1753
[9]	Vispute R D, Hullavarad S, Luykx A, Young D and Dhar S 2007 Appl. Phys. Lett. 90 241917
[10]	Guziewicz M, Piotrowsk A, Kaminsk E, Grasz K, Diduszko R, Stonert A, Turos A, Sochacki M and Szmidt J 2006 Mater. Sci. Eng. B 135 289
[11]	Yang H, Peng T H, Wang W J, Wang W Y and Chen X L 2008 Appl. Surf. Sci. 255 3121
[12]	Jang T, Odekirk B, Madsen L D and Porter L M 2001 J. Appl. Phys. 90 4555
[13]	Virshup A, Liu F, Lukco D, Buchholt K, Spetz A L and Porter L M 2011 J. Electron. Mater. 40 400
[14]	Okojiea R S, Lukco D, Chen Y L L and Spry D J 2002 J. Appl. Phys. 91 6533
[15]	Kuchuk A V, Guziewicz M, Ratajczak R, Wzorek M, Kladko V P and Piotrowsk A 2009 Mater. Sci. Eng. B 165 38
[16]	Maeda1 M, Sano M and Takahashi Y 2014 IOP Conf. Ser.: Mater. Sci. Eng. B 61 012031
[17]	Buchholt K, Ghandi R, Domeij M, Zetterling C M and Lu J 2011 Appl. Phys. Lett. 98 042108
[18]	Machac P, Barda B and Hubickova M 2008 Microelectron. Eng. 85 2016
[19]	Okojiea R S, Lukco D, Chen Y L and Spry D J 2002 J. Appl. Phys. 91 6533
[20]	Zhang Y P, Chen Z Z, Lu W Y, Tan J H, Cheng Y and Shi W Z 2014 Chin. Phys. B 23 057303
[21]	Li R F, Guo Z N, Yang J J, Zeng X P and Yuan W X 2012 Monatsh Chem. 143 1329
[22]	Cao Y, Pérez-García S A and Nyborg L 2007 Appl. Surf. Sci. 254 139
[23]	Schroder D K 2006 Semiconductor Material and Device Characterization, 3rd edn. (New York: Wiley-Interscience) p. 139
[24]	Cole M W, Joshi P C, Hubband C, Demaree J D and Ervin M 2002 J. Appl. Phys. 91 3864
[25]	Huang L Q, Liu B B, Zhu Q Z, Chen S H, Gao M C, Qin F W and Wang D 2012 Appl. Phys. Lett. 100 263503
[26]	Askeland D R and Phule P P 2004 The Science and Engineering of Materials, 4th edn. (Thomson Learning, USA) p. 164

Effect of the annealing temperature on the long-term thermal stability of Pt/Si/Ta/Ti/4H-SiC contacts

Effect of the annealing temperature on the long-term thermal stability of Pt/Si/Ta/Ti/4H-SiC contacts

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 26

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n⁺-InGaN and mask-free regrowth process[J]. 中国物理B, 2023, 32(3): 37303-037303.
[2]	Lizhi Fang(方立志), Xiong Zhou(周雄), Zhiwei Zhao(赵志伟), Biao Zheng(郑标), Haiping Xia(夏海平), Jun Wang(王军), Hongwei Song(宋宏伟), and Baojiu Chen(陈宝玖). Luminescent characteristics of Tm³⁺/Tb³⁺/Eu³⁺ tri-doped Na₅Y₉F₃₂ single crystals for white emission with high thermal stability[J]. 中国物理B, 2022, 31(12): 127802-127802.
[3]	Ines Ben Amor, Lotfi Saadaoui, Abdulaziz N. Alharbi, Talal M. Althagafi, and Taoufik Soltani. Influences of nanoparticles and chain length on thermodynamic and electrical behavior of fluorine liquid crystals[J]. 中国物理B, 2022, 31(10): 104202-104202.
[4]	Mingchen Hou(侯明辰), Gang Xie(谢刚), Qing Guo(郭清), and Kuang Sheng(盛况). Protection of isolated and active regions in AlGaN/GaN HEMTs using selective laser annealing[J]. 中国物理B, 2021, 30(9): 97302-097302.
[5]	Jing-Cheng Wang(王旌丞), Hao Chen(陈浩), Lin-Feng Wan(万琳丰), Cao-Yuan Mu(牟草源), Yao-Feng Liu(刘尧峰), Shao-Heng Cheng(成绍恒), Qi-Liang Wang(王启亮), Liu-An Li(李柳暗), and Hong-Dong Li(李红东). Ohmic and Schottky contacts of hydrogenated and oxygenated boron-doped single-crystal diamond with hill-like polycrystalline grains[J]. 中国物理B, 2021, 30(9): 96803-096803.
[6]	关赫, 姜成语, 王少熙. Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor[J]. 中国物理B, 2020, 29(9): 96701-096701.
[7]	牛磊, 陈益敏, 沈祥, 徐铁峰. Thermal stability of magnetron sputtering Ge-Ga-S films[J]. 中国物理B, 2020, 29(8): 87803-087803.
[8]	徐梦姣, 李素霞, 季辰辰, 雒晚霞, 王鲁香. Energy transfer, luminescence properties, and thermal stability of color tunable barium pyrophosphate phosphors[J]. 中国物理B, 2020, 29(6): 63301-063301.
[9]	贾海洪, 包德亮, 张余洋, 杜世萱. Structural and thermal stabilities of Au@Ag core-shell nanoparticles and their arrays: A molecular dynamics simulation[J]. 中国物理B, 2020, 29(4): 48701-048701.
[10]	房帅, 马红安, 郭龙锁, 陈良超, 王遥, 丁路遥, 蔡正浩, 王健, 贾晓鹏. Characteristics of urea under high pressure and high temperature[J]. 中国物理B, 2019, 28(9): 98101-098101.
[11]	杨凤, 王聪, 潘宇浩, 周谐宇, 孔祥华, 季威. Surface stabilized cubic phase of CsPbI₃ and CsPbBr₃ at room temperature[J]. 中国物理B, 2019, 28(5): 56402-056402.
[12]	侯明辰, 谢刚, 盛况. Mechanism of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures via laser annealing[J]. 中国物理B, 2019, 28(3): 37302-037302.
[13]	白冰, 王宏, 李岩, 郝云霞, 张博, 王博平, 王子航, 杨红旗, 高启航, 吕超, 张庆顺, 闫小兵. Charge trapping memory device based on the Ga₂O₃ films as trapping and blocking layer[J]. 中国物理B, 2019, 28(10): 106802-106802.
[14]	叶鑫, 夏晓川, 梁红伟, 李卓, 张贺秋, 杜国同, 崔兴柱, 梁晓华. Effect of Au/Ni/4H-SiC Schottky junction thermal stability on performance of alpha particle detection[J]. 中国物理B, 2018, 27(8): 87304-087304.
[15]	张彤, 蒲涛飞, 谢天, 李柳暗, 补钰煜, 王霄, 敖金平. Synthesis of thermally stable HfO_xN_y as gate dielectric for AlGaN/GaN heterostructure field-effect transistors[J]. 中国物理B, 2018, 27(7): 78503-078503.