中国物理B ›› 2010, Vol. 19 ›› Issue (9): 97305-097305.doi: 10.1088/1674-1056/19/9/097305

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Improving performances of ITO/GaP contact on AlGaInP light-emitting diodes

李春伟, 朱彦旭, 沈光地, 张勇辉, 秦园, 高伟, 蒋文静, 邹德恕   

  1. Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100022, China
  • 收稿日期:2009-12-08 修回日期:2010-03-18 出版日期:2010-09-15 发布日期:2010-09-15
  • 基金资助:
    Project supported by the Natural Science Foundation of Beijing, China (Grant No. 4092007), the National High Technology Research and Development Program of China (Grant No. 2008AA03Z402), the Doctoral Program Foundation of Beijing, China (Grant No. X00020

Improving performances of ITO/GaP contact on AlGaInP light-emitting diodes

Li Chun-Wei(李春伟)† , Zhu Yan-Xu(朱彦旭), Shen Guang-Di(沈光地), Zhang Yong-Hui(张勇辉), Qin Yuan(秦园), Gao Wei(高伟), Jiang Wen-Jing(蒋文静), and Zhou De-Shu(邹德恕)   

  1. Beijing Optoelectronic Technology Laboratory, Institute of Electronic Engineering and Information, Beijing University of Technology, Beijing 100022, China
  • Received:2009-12-08 Revised:2010-03-18 Online:2010-09-15 Published:2010-09-15
  • Supported by:
    Project supported by the Natural Science Foundation of Beijing, China (Grant No. 4092007), the National High Technology Research and Development Program of China (Grant No. 2008AA03Z402), the Doctoral Program Foundation of Beijing, China (Grant No. X0002013200801) and the Seventh BJUT Technology Fund for postgraduate students, China.

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摘要： In this paper AlGaInP light emitting diodes with different types of electrodes: Au/Zn/Au-ITO Au/Ti-ITO Au/Ge/Ni-ITO and Au-ITO are fabricated. The photoelectricity properties of those LEDs are studied. The results show that the Au/Zn/Au electrode greatly improves the performance of LEDs compared with the other electrodes. Because the Au/Zn/Au electrode not only forms a good Ohmic contact with indium tin oxide (ITO), but also reduces the specific contact resistances between ITO and GaP, which are 1.273×10-6 Ω · cm2 and 1.743×10-3 Ω ·cm2 between Au/Zn/Au-ITO and ITO-GaP respectively. Furthermore, the textured Zn/Au-ITO/Zn electrode is designed to improve the performances of LEDs, reduce the forward-voltage of the LED from 1.93 to 1.88 V, and increase the luminous intensity of the LEDs from 126 to 134 mcd when driven at 20 mA.

Abstract: In this paper AlGaInP light emitting diodes with different types of electrodes: Au/Zn/Au-ITO Au/Ti-ITO Au/Ge/Ni-ITO and Au-ITO are fabricated. The photoelectricity properties of those LEDs are studied. The results show that the Au/Zn/Au electrode greatly improves the performance of LEDs compared with the other electrodes. Because the Au/Zn/Au electrode not only forms a good Ohmic contact with indium tin oxide (ITO), but also reduces the specific contact resistances between ITO and GaP, which are 1.273×10-6 Ω · cm2 and 1.743×10-3 Ω ·cm2 between Au/Zn/Au-ITO and ITO-GaP respectively. Furthermore, the textured Zn/Au-ITO/Zn electrode is designed to improve the performances of LEDs, reduce the forward-voltage of the LED from 1.93 to 1.88 V, and increase the luminous intensity of the LEDs from 126 to 134 mcd when driven at 20 mA.

Key words: Ohmic contact, tunneling, light emitting diode, Zn/Au-ITO/Zn

中图分类号: 

  • 7340C