Research on the electrical characteristics of an organic thin-film field-effect transistor based on alternating-current resistance

doi:10.1088/1674-1056/20/12/127303

中国物理B ›› 2011, Vol. 20 ›› Issue (12): 127303-127303.doi: 10.1088/1674-1056/20/12/127303

Research on the electrical characteristics of an organic thin-film field-effect transistor based on alternating-current resistance

徐征¹, 赵谡玲¹, 尹飞飞¹, 陈跃宁², 张成文³, 焦碧媛³, 董宇航³

(1)Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China;Key Laboratory of Luminescence and Optical Information of the Ministry of Education, Beijing Jiaotong University, Beijing 100044, China; (2)Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China;Key Laboratory of Luminescence and Optical Information of the Ministry of Education, Beijing Jiaotong University, Beijing 100044, China;Physics Department, Liaonin; (3)Physics Department, Liaoning University, Shenyang 110036, China

收稿日期:2010-12-24 修回日期:2011-03-09 出版日期:2011-12-15 发布日期:2011-12-15
基金资助:
Project supported by the National Grand Fundamental Research 973 Program of China (Grant No. 2010CB327704), the National Natural Science Foundation of China (Grant Nos. 10974013 and 60978060), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090009110027), the Natural Science Foundation of Beijing, China (Grant No. 1102028), the National Natural Science Foundation for Distinguished Young Scholars (Grant No. 60825407), and Beijing Municipal Science and Technology Commission (Grant No. Z090803044009001).

Research on the electrical characteristics of an organic thin-film field-effect transistor based on alternating-current resistance

Chen Yue-Ning(陈跃宁)^a)b)c), Xu Zheng(徐征)^a)b)†, Zhao Su-Ling(赵谡玲)^a)b), Yin Fei-Fei(尹飞飞)^a)b), Zhang Cheng-Wen(张成文)^c), Jiao Bi-Yuan(焦碧媛)^c), and Dong Yu-Hang (董宇航)^c)

^a Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China; ^bKey Laboratory of Luminescence and Optical Information of the Ministry of Education, Beijing Jiaotong University, Beijing 100044, China; ^c Physics Department, Liaoning University, Shenyang 110036, China

Received:2010-12-24 Revised:2011-03-09 Online:2011-12-15 Published:2011-12-15
Supported by:
Project supported by the National Grand Fundamental Research 973 Program of China (Grant No. 2010CB327704), the National Natural Science Foundation of China (Grant Nos. 10974013 and 60978060), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20090009110027), the Natural Science Foundation of Beijing, China (Grant No. 1102028), the National Natural Science Foundation for Distinguished Young Scholars (Grant No. 60825407), and Beijing Municipal Science and Technology Commission (Grant No. Z090803044009001).

摘要/Abstract

摘要： In this article, an organic thin-film field-effect transistor (OTFFET) with top-gate and bottom-contact geometry based on pentacene as the active layer is fabricated. The experimental data of the I-V are obtained from the OTFFET device. The alternating-current (AC) resistance value of the OTFFET device is calculated using the derivation method from the experimental data, and the AC resistance trend curves of the OTFFET device are obtained with the region fitting method. We analyse the characteristics of the OTFFET device with an AC resistance trend curve. To discover whether it has a high resistance, it is proposed to judge the region of the source/drain voltage (V_DS) less than the transition voltage, thereby determining whether the contact between the metal electrode and the organic semiconductor layer of the OTFFET device is Ohmic or non-Ohmic. The theoretical analysis shows that the field-effect mobility and the AC resistance are in reverse proportion. Therefore, we point out that reducing AC resistance is necessary if field-effect mobility is to be improved.

关键词: organic thin-film field-effect transistor, alternating-current resistance, Ohmic contact

Abstract: In this article, an organic thin-film field-effect transistor (OTFFET) with top-gate and bottom-contact geometry based on pentacene as the active layer is fabricated. The experimental data of the I-V are obtained from the OTFFET device. The alternating-current (AC) resistance value of the OTFFET device is calculated using the derivation method from the experimental data, and the AC resistance trend curves of the OTFFET device are obtained with the region fitting method. We analyse the characteristics of the OTFFET device with an AC resistance trend curve. To discover whether it has a high resistance, it is proposed to judge the region of the source/drain voltage (V_DS) less than the transition voltage, thereby determining whether the contact between the metal electrode and the organic semiconductor layer of the OTFFET device is Ohmic or non-Ohmic. The theoretical analysis shows that the field-effect mobility and the AC resistance are in reverse proportion. Therefore, we point out that reducing AC resistance is necessary if field-effect mobility is to be improved.

Key words: organic thin-film field-effect transistor, alternating-current resistance, Ohmic contact

中图分类号: (Contact resistance, contact potential)

73.40.Cg

73.40.Rw (Metal-insulator-metal structures) 73.61.Ph (Polymers; organic compounds)

陈跃宁, 徐征, 赵谡玲, 尹飞飞, 张成文, 焦碧媛, 董宇航. Research on the electrical characteristics of an organic thin-film field-effect transistor based on alternating-current resistance[J]. 中国物理B, 2011, 20(12): 127303-127303.

Chen Yue-Ning(陈跃宁), Xu Zheng(徐征), Zhao Su-Ling(赵谡玲), Yin Fei-Fei(尹飞飞), Zhang Cheng-Wen(张成文), Jiao Bi-Yuan(焦碧媛), and Dong Yu-Hang (董宇航) . Research on the electrical characteristics of an organic thin-film field-effect transistor based on alternating-current resistance[J]. Chin. Phys. B, 2011, 20(12): 127303-127303.

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Research on the electrical characteristics of an organic thin-film field-effect transistor based on alternating-current resistance

Research on the electrical characteristics of an organic thin-film field-effect transistor based on alternating-current resistance

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