Protection of isolated and active regions in AlGaN/GaN HEMTs using selective laser annealing

doi:10.1088/1674-1056/abf34c

中国物理B ›› 2021, Vol. 30 ›› Issue (9): 97302-097302.doi: 10.1088/1674-1056/abf34c

Protection of isolated and active regions in AlGaN/GaN HEMTs using selective laser annealing

Mingchen Hou(侯明辰)^1,2, Gang Xie(谢刚)^1,2,†, Qing Guo(郭清)^1,3, and Kuang Sheng(盛况)^1,2

1 College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China;
2 Hangzhou Innovation Center, Zhejiang University, Hangzhou 310027, China;
3 Ningbo Chipex Semiconductor Co., LTD., Ningbo 315000, China

收稿日期:2021-02-08 修回日期:2021-03-12 接受日期:2021-03-30 出版日期:2021-08-19 发布日期:2021-08-30
通讯作者: Gang Xie E-mail:xielyz@zju.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51577169 and 51777187), the National Key Research and Development Program of China (Grant No. 2017YFB0402804), and the “Science and Technology Innovation 2025” Major Program of Ningbo (Grant No. 2018B10098).

Protection of isolated and active regions in AlGaN/GaN HEMTs using selective laser annealing

Mingchen Hou(侯明辰)^1,2, Gang Xie(谢刚)^1,2,†, Qing Guo(郭清)^1,3, and Kuang Sheng(盛况)^1,2

1 College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China;
2 Hangzhou Innovation Center, Zhejiang University, Hangzhou 310027, China;
3 Ningbo Chipex Semiconductor Co., LTD., Ningbo 315000, China

Received:2021-02-08 Revised:2021-03-12 Accepted:2021-03-30 Online:2021-08-19 Published:2021-08-30
Contact: Gang Xie E-mail:xielyz@zju.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51577169 and 51777187), the National Key Research and Development Program of China (Grant No. 2017YFB0402804), and the “Science and Technology Innovation 2025” Major Program of Ningbo (Grant No. 2018B10098).

摘要/Abstract

摘要： AlGaN/GaN high-electron-mobility transistors with Au-free ohmic contacts are fabricated by selective laser annealing and conventional rapid thermal annealing. The current transport mechanism of ohmic contacts is investigated. High-temperature annealing can be avoided in the isolated region and the active region by selective laser annealing. The implanted isolation leakage current is maintained 10^-6 mA/mm even at 1000 V after selective laser annealing. On the contrary, high-temperature annealing will cause obvious degradation of the isolation. The morphology of AlGaN surface is measured by atomic force microscope. No noticeable change of the AlGaN surface morphology after selective laser annealing, while the root-mean-square roughness value markedly increases after rapid thermal annealing. The smaller frequency dispersion of capacitance-voltage characteristics confirms the lower density of surface states after selective laser annealing. Thus, dynamic on-resistance is effectively suppressed.

关键词: gallium nitride, ohmic contacts, laser annealing

Abstract: AlGaN/GaN high-electron-mobility transistors with Au-free ohmic contacts are fabricated by selective laser annealing and conventional rapid thermal annealing. The current transport mechanism of ohmic contacts is investigated. High-temperature annealing can be avoided in the isolated region and the active region by selective laser annealing. The implanted isolation leakage current is maintained 10^-6 mA/mm even at 1000 V after selective laser annealing. On the contrary, high-temperature annealing will cause obvious degradation of the isolation. The morphology of AlGaN surface is measured by atomic force microscope. No noticeable change of the AlGaN surface morphology after selective laser annealing, while the root-mean-square roughness value markedly increases after rapid thermal annealing. The smaller frequency dispersion of capacitance-voltage characteristics confirms the lower density of surface states after selective laser annealing. Thus, dynamic on-resistance is effectively suppressed.

Key words: gallium nitride, ohmic contacts, laser annealing

中图分类号: (III-V semiconductors)

73.61.Ey

81.40.Rs (Electrical and magnetic properties related to treatment conditions) 42.55.-f (Lasers)

Mingchen Hou(侯明辰), Gang Xie(谢刚), Qing Guo(郭清), and Kuang Sheng(盛况). Protection of isolated and active regions in AlGaN/GaN HEMTs using selective laser annealing[J]. 中国物理B, 2021, 30(9): 97302-097302.

Mingchen Hou(侯明辰), Gang Xie(谢刚), Qing Guo(郭清), and Kuang Sheng(盛况). Protection of isolated and active regions in AlGaN/GaN HEMTs using selective laser annealing[J]. Chin. Phys. B, 2021, 30(9): 97302-097302.

参考文献

[1] Chow T P and Tyagi R 1994 IEEE Trans. Electron Dev. 41 1481
[2] Hou M C, Xie G and Sheng K 2019 Chin. Phys. B 28 037302
[3] Shriki A, Winter R, Calahorra Y, Kauffmann Y, Ankonina G, Eizenberg M and Ritter D 2017 J. Appl. Phys. 121 065301
[4] Liu Z H, Sun M, Lee H S, Heuken M and Palacios T 2013 Appl. Phys. Express 6 096502
[5] Yao J N, Lin Y C, Chuang Y L, Huang Y X and Chang E Y 2015 IEEE International Symposium on the Physical & Failure Analysis of Integrated Circuits, June 29-July 2, 2015, Hsinchu, Taiwan, China
[6] Lee J G, Kim H S, Kim D H, Han S W, Seo K S and Cha H Y 2015 Semicond. Sci. Technol. 30 085005
[7] Zhang J H, Huang S, Bao Q L, Wang X L, Wei K, Zheng Y K, Li Y K, Zhao C, Liu X Y, Zhou Q, Chen W J and Zhang B 2015 Appl. Phys. Lett. 107 262109
[8] Li Q X, Zhou Q B, Gao S, Liu X Y and Wang H 2018 Solid State Electron. 147 1
[9] Guziewicz M, Taube A, Ekielski M, Golaszewska K, Zdunek J, Bazarnik P, Adamczyk-Cieslak B and Szerling A 2019 Mater. Sci. Semicond. Process. 96 153
[10] Hou M C, Xie G and Sheng K 2019 Electron. Lett. 55 658
[11] Shiu J Y, Huang J C, Desmaris V, Chang C T, Lu C Y, Kumakura K, Shiu, Makimoto T, Zirath H, Rorsman N and Chang E Y 2007 IEEE Electron Dev. Lett. 28 476
[12] Lo C F, Kang T S, Liu L, Chang C Y, Pearton S J, Kravchenko I I, Laboutin O, Johnson J W and Ren F 2010 Appl. Phys. Lett. 97 262116
[13] Taube A, Kaminska E, Kozubal M, Kaczmarski J, Wojtasiak W, Jasinski J, Borysiewicz M A, Ekielski M, Juchniewicz M, Grochowski J, Mysliwiec M, Dynowska E, Barcz A, Prystawko P, ZajaÎc M, Kucharski R and Piotrowska A 2015 Phys. Status Solidi A 212 1162
[14] Arulkumarana S, Ranjan K, Ng G I, Kennedy J, Murmu P P, Bhat T N and Tripathy S 2016 J. Vacuum Sci. Technol. B 34 042203
[15] Hou M C, Xie G and Sheng K 2018 IEEE Electron Dev. Lett. 39 1137
[16] Schroder D K 2006 Semiconductor Material and Device Characterization, 3rd edn. (Hoboken: John Wiley and Sons) p. 133
[17] Zhao M L, Tang X S, Huo W X, Han L L, Deng Z, Jiang Y, Wang W X, Chen H, Du C H and Jia H Q 2020 Chin. Phys. B 29 048104
[18] Yamada T, Watanabe K, Nozaki M, Shih H A, Nakazawa S, Anda Y, Ueda T, Yoshigoe A, Hosoi T and Shimura T 2018 Jpn. J. Appl. Phys. 57 06KA07
[19] Liu M H, Huang Z W, Chang G C, Lin X N, Li L and Jin Y F 2020 Chin. Phys. Lett. 37 097101
[20] Hu S, Yang L, Mi M H, Hou B, Liu S, Zhang M, Wu M, Zhu Q, Wu S, Lu Y, Zhu J J, Zhou X W, Lv L, Ma X H and Hao Y 2020 Chin. Phys. B 29 087305
[21] Hori Y, Yatabe Z and Hashizume T 2013 J. Appl. Phys. 114 244503
[22] Neamen D A 2012 Semiconductor Physics and Devices: basic principles, 4th edn. (New York: McGraw-Hill) pp. 400-403

Protection of isolated and active regions in AlGaN/GaN HEMTs using selective laser annealing

Protection of isolated and active regions in AlGaN/GaN HEMTs using selective laser annealing

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