Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors

doi:10.1088/1674-1056/26/3/037201

中国物理B ›› 2017, Vol. 26 ›› Issue (3): 37201-037201.doi: 10.1088/1674-1056/26/3/037201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors

Lei Wang(王磊), Jiaqi Zhang(张家琦), Liuan Li(李柳暗), Yutaro Maeda(前田裕太郎), Jin-Ping Ao(敖金平)

1 Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan;
2 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China

收稿日期:2016-10-26 修回日期:2016-12-23 出版日期:2017-03-05 发布日期:2017-03-05
通讯作者: Jin-Ping Ao, Liuan Li E-mail:jpao@ee.tokushima-u.ac.jp;liliuan@mail.sysu.edu.cn

Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors

Lei Wang(王磊)¹, Jiaqi Zhang(张家琦)¹, Liuan Li(李柳暗)², Yutaro Maeda(前田裕太郎)¹, Jin-Ping Ao(敖金平)¹

1 Institute of Technology and Science, Tokushima University, Tokushima 770-8506, Japan;
2 School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China

Received:2016-10-26 Revised:2016-12-23 Online:2017-03-05 Published:2017-03-05
Contact: Jin-Ping Ao, Liuan Li E-mail:jpao@ee.tokushima-u.ac.jp;liliuan@mail.sysu.edu.cn

摘要/Abstract

摘要：

In this study, a low-temperature annealed ohmic contact process was proposed on AlGaN/GaN heterostructure field effect transistors (HFETs) with the assistance of inductively coupled plasma (ICP) surface treatment. The effect of ICP treatment process on the 2DEG channel as well as the formation mechanism of the low annealing temperature ohmic contact was investigated. An appropriate residual AlGaN thickness and a plasma-induced damage are considered to contribute to the low-temperature annealed ohmic contact. By using a single Al layer to replace the conventional Ti/Al stacks, ohmic contact with a contact resistance of 0.35 Ω·mm was obtained when annealed at 575℃ for 3 min. Good ohmic contact was also obtained by annealing at 500℃ for 20 min.

关键词: AlGaN/GaN HFET, low-temperature ohmic contact, inductively coupled plasma (ICP), surface treatment

Abstract:

Key words: AlGaN/GaN HFET, low-temperature ohmic contact, inductively coupled plasma (ICP), surface treatment

中图分类号: (General theory, scattering mechanisms)

72.20.Dp

73.61.Ey (III-V semiconductors) 81.15.Cd (Deposition by sputtering) 81.65.Cf (Surface cleaning, etching, patterning)

王磊, 张家琦, 李柳暗, 前田裕太郎, 敖金平. Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors[J]. 中国物理B, 2017, 26(3): 37201-037201.

Lei Wang(王磊), Jiaqi Zhang(张家琦), Liuan Li(李柳暗), Yutaro Maeda(前田裕太郎), Jin-Ping Ao(敖金平). Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors[J]. Chin. Phys. B, 2017, 26(3): 37201-037201.

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Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors

Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors

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