Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

doi:10.1088/1674-1056/24/9/096804

中国物理B ›› 2015, Vol. 24 ›› Issue (9): 96804-096804.doi: 10.1088/1674-1056/24/9/096804

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

李晓静^a, 赵德刚^a, 江德生^a, 陈平^a, 朱建军^a, 刘宗顺^a, 乐伶聪^a, 杨静^a, 何晓光^a, 张立群^b, 刘建平^{a b c}, 张书明^b, 杨辉^{a b}

a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

收稿日期:2015-03-13 修回日期:2015-04-14 出版日期:2015-09-05 发布日期:2015-09-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61474110, 61377020, 61376089, 61223005, and 61176126), the National Science Fund for Distinguished Young Scholars of China (Grant No. 60925017), One Hundred Person Project of the Chinese Academy of Sciences, and the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362).

Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

Li Xiao-Jing (李晓静)^a, Zhao De-Gang (赵德刚)^a, Jiang De-Sheng (江德生)^a, Chen Ping (陈平)^a, Zhu Jian-Jun (朱建军)^a, Liu Zong-Shun (刘宗顺)^a, Le Ling-Cong (乐伶聪)^a, Yang Jing (杨静)^a, He Xiao-Guang (何晓光)^a, Zhang Li-Qun (张立群)^b, Liu Jian-Ping (刘建平)^{a b c}, Zhang Shu-Ming (张书明)^b, Yang Hui (杨辉)^{a b}

a State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
b Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

Received:2015-03-13 Revised:2015-04-14 Online:2015-09-05 Published:2015-09-05
Contact: Zhao De-Gang E-mail:dgzhao@red.semi.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61474110, 61377020, 61376089, 61223005, and 61176126), the National Science Fund for Distinguished Young Scholars of China (Grant No. 60925017), One Hundred Person Project of the Chinese Academy of Sciences, and the Basic Research Project of Jiangsu Province, China (Grant No. BK20130362).

摘要/Abstract

摘要： The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN (p⁺⁺-GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I-V measurement shows that the variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p⁺⁺-GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p⁺⁺-GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97× 10^-4Ω ·cm² is achieved.

关键词: ohmic contact, p-type GaN, transportation mechanism, deep-level-defect band

Abstract: The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN (p⁺⁺-GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I-V measurement shows that the variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p⁺⁺-GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p⁺⁺-GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97× 10^-4Ω ·cm² is achieved.

Key words: ohmic contact, p-type GaN, transportation mechanism, deep-level-defect band

中图分类号: (Surface and interface dynamics and vibrations)

68.35.Ja

61.72.uj (III-V and II-VI semiconductors) 61.82.Bg (Metals and alloys) 67.25.bh (Films and restricted geometries)

李晓静, 赵德刚, 江德生, 陈平, 朱建军, 刘宗顺, 乐伶聪, 杨静, 何晓光, 张立群, 刘建平, 张书明, 杨辉. Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN[J]. 中国物理B, 2015, 24(9): 96804-096804.

Li Xiao-Jing (李晓静), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Chen Ping (陈平), Zhu Jian-Jun (朱建军), Liu Zong-Shun (刘宗顺), Le Ling-Cong (乐伶聪), Yang Jing (杨静), He Xiao-Guang (何晓光), Zhang Li-Qun (张立群), Liu Jian-Ping (刘建平), Zhang Shu-Ming (张书明), Yang Hui (杨辉). Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN[J]. Chin. Phys. B, 2015, 24(9): 96804-096804.

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Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

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