中国物理B ›› 2011, Vol. 20 ›› Issue (4): 46101-046101.doi: 10.1088/1674-1056/20/4/046101

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Structural characterization of V/Al/V/Au Ohmic contacts to n-type Al0.4Ga0.6N

李涛, 秦志新, 许正昱, 沈波, 张国义   

  1. State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China
  • 收稿日期:2010-07-17 修回日期:2010-10-25 出版日期:2011-04-15 发布日期:2011-04-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 10774001, 60736033, 60876041 and 60577030), National Basic Research Program of China (Grant Nos. 2006CB604908 and 2006CB921607), and the National Key Basic Research and Development Program of China (973 Project) (Grant No. TG2007CB307004).

Structural characterization of V/Al/V/Au Ohmic contacts to n-type Al0.4Ga0.6N

Li Tao(李涛),Qin Zhi-Xin(秦志新)†,Xu Zheng-Yu(许正昱), Shen Bo(沈波),and Zhang Guo-Yi(张国义)   

  1. State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China
  • Received:2010-07-17 Revised:2010-10-25 Online:2011-04-15 Published:2011-04-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 10774001, 60736033, 60876041 and 60577030), National Basic Research Program of China (Grant Nos. 2006CB604908 and 2006CB921607), and the National Key Basic Research and Development Program of China (973 Project) (Grant No. TG2007CB307004).

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摘要： This paper investigates the temperature dependence of the specific resistance in annealed V/Al/V/Au (15 nm/85 nm/20 nm/95 nm) contacts on n-Al0.4Ga0.6N. Contacts annealed at 700 du and higher temperatures show Ohmic behaviour. Annealing at 800 du produces the lowest contact resistance. Samples annealed at 800 du have been analysed by using cross-sectional transmission electron microscopy and an energy dispersive x-ray spectrum. Limited reaction depths are observed between V-based contacts and n-AlGaN. The VN grains are found to form in the contact layer of the annealed samples, which can be considered as the key to the successful formation of Ohmic contact. The contact layer adjacent to AlGaN material consists of V-Al-Au-N, AlN and AlAu alloys.

关键词: Ohmic contact, vanadium, transmission electron microscopy, energy dispersive x-ray spectrum

Abstract: This paper investigates the temperature dependence of the specific resistance in annealed V/Al/V/Au (15 nm/85 nm/20 nm/95 nm) contacts on n-Al0.4Ga0.6N. Contacts annealed at 700℃ and higher temperatures show Ohmic behaviour. Annealing at 800 du produces the lowest contact resistance. Samples annealed at 800℃ have been analysed by using cross-sectional transmission electron microscopy and an energy dispersive x-ray spectrum. Limited reaction depths are observed between V-based contacts and n-AlGaN. The VN grains are found to form in the contact layer of the annealed samples, which can be considered as the key to the successful formation of Ohmic contact. The contact layer adjacent to AlGaN material consists of V–Al–Au–N, AlN and AlAu alloys.

Key words: Ohmic contact, vanadium, transmission electron microscopy, energy dispersive x-ray spectrum

中图分类号:  (Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED))

  • 61.05.jh
68.37.Lp (Transmission electron microscopy (TEM)) 61.72.uj (III-V and II-VI semiconductors) 73.40.Cg (Contact resistance, contact potential)