中国物理B ›› 2014, Vol. 23 ›› Issue (5): 57303-057303.doi: 10.1088/1674-1056/23/5/057303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Effect of additional silicon on titanium/4H-SiC contacts properties

张永平, 陈之战, 卢吴越, 谈嘉慧, 程越, 石旺舟   

  1. Shanghai Normal University, Shanghai 200234, China
  • 收稿日期:2013-10-09 修回日期:2013-12-23 出版日期:2014-05-15 发布日期:2014-05-15
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2012CB326402), the Innovation Program of Shanghai Municipal Education Commission, China (Grant No. 13ZZ108), and the Shanghai Science and Technology Commission, China (Grant No. 13520502700).

Effect of additional silicon on titanium/4H-SiC contacts properties

Zhang Yong-Ping (张永平), Chen Zhi-Zhan (陈之战), Lu Wu-Yue (卢吴越), Tan Jia-Hui (谈嘉慧), Cheng Yue (程越), Shi Wang-Zhou (石旺舟)   

  1. Shanghai Normal University, Shanghai 200234, China
  • Received:2013-10-09 Revised:2013-12-23 Online:2014-05-15 Published:2014-05-15
  • Contact: Chen Zhi-Zhan E-mail:chenwbgs@126.com
  • About author:73.40.Cg; 68.55.-a
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2012CB326402), the Innovation Program of Shanghai Municipal Education Commission, China (Grant No. 13ZZ108), and the Shanghai Science and Technology Commission, China (Grant No. 13520502700).

摘要: The Ti electrode was deposited on the (0001 ) face of an n-type 4H-SiC substrate by magnetron sputtering. The effect of the electrode placement method during the annealing treatment on the contact property was carefully investigated. When the electrode was faced to the Si tray and annealed, it showed ohmic behavior, otherwise it showed a non-ohmic property. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to characterize the electrode phase, composition, thickness, and surface morphology. The additional silicon introduced from the Si tray played a key role in the formation of the ohmic contact on the Ti/4H-SiC contact.

关键词: Ti/4H-SiC, ohmic contact, surface morphology, additional silicon

Abstract: The Ti electrode was deposited on the (0001 ) face of an n-type 4H-SiC substrate by magnetron sputtering. The effect of the electrode placement method during the annealing treatment on the contact property was carefully investigated. When the electrode was faced to the Si tray and annealed, it showed ohmic behavior, otherwise it showed a non-ohmic property. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to characterize the electrode phase, composition, thickness, and surface morphology. The additional silicon introduced from the Si tray played a key role in the formation of the ohmic contact on the Ti/4H-SiC contact.

Key words: Ti/4H-SiC, ohmic contact, surface morphology, additional silicon

中图分类号:  (Contact resistance, contact potential)

  • 73.40.Cg
68.55.-a (Thin film structure and morphology)