中国物理B ›› 2013, Vol. 22 ›› Issue (6): 68501-068501.doi: 10.1088/1674-1056/22/6/068501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

High voltage super-junction lateral double diffused metal-oxide semiconductor with partial lightly doped pillar

伍伟, 张波, 方健, 罗小蓉, 李肇基   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China, Chengdu 610054, China
  • 收稿日期:2012-09-13 修回日期:2012-12-15 出版日期:2013-05-01 发布日期:2013-05-01
  • 基金资助:
    Projects supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2010ZX02201), the National Natural Science Foundation of China (Grant No. 61176069), and the National Defense Pre-Research of China (Grant No. 51308020304).

High voltage super-junction lateral double diffused metal-oxide semiconductor with partial lightly doped pillar

Wu Wei (伍伟), Zhang Bo (张波), Fang Jian (方健), Luo Xiao-Rong (罗小蓉), Li Zhao-Ji (李肇基)   

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China, Chengdu 610054, China
  • Received:2012-09-13 Revised:2012-12-15 Online:2013-05-01 Published:2013-05-01
  • Contact: Wu Wei E-mail:wuweiwwu@163.com
  • Supported by:
    Projects supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No. 2010ZX02201), the National Natural Science Foundation of China (Grant No. 61176069), and the National Defense Pre-Research of China (Grant No. 51308020304).

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摘要： A novel super-junction lateral double diffused metal-oxide semiconductor (SJ-LDMOS) with partial lightly doped P pillar (PD) is proposed. Firstly, the reduction of the charges in the partial P pillar ensures the charge balance and suppresses the substrate assisted depletion effect. Secondly, the new electric field peak produced by P/P- junction modulates the surface electric field distribution. Both of them result in a high breakdown voltage (BV). In addition, due to the same conduction paths, the specific on-resistance (Ron,sp) of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS. Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20 V/μm at 15-μm drift length, resulting in a BV of 300 V.

关键词: super-junction, lateral double diffused metal-oxide semiconductor, partial lightly doped pillar, electric field modulation, breakdown voltage

Abstract: A novel super-junction lateral double diffused metal-oxide semiconductor (SJ-LDMOS) with partial lightly doped P pillar (PD) is proposed. Firstly, the reduction of the charges in the partial P pillar ensures the charge balance and suppresses the substrate assisted depletion effect. Secondly, the new electric field peak produced by P/P- junction modulates the surface electric field distribution. Both of them result in a high breakdown voltage (BV). In addition, due to the same conduction paths, the specific on-resistance (Ron,sp) of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS. Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20 V/μm at 15-μm drift length, resulting in a BV of 300 V.

Key words: super-junction, lateral double diffused metal-oxide semiconductor, partial lightly doped pillar, electric field modulation, breakdown voltage

中图分类号:  (Semiconductor-device characterization, design, and modeling)

  • 85.30.De
85.30.Tv (Field effect devices)