中国物理B ›› 2013, Vol. 22 ›› Issue (6): 68502-068502.doi: 10.1088/1674-1056/22/6/068502

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Hardening measures for bipolar transistor against microwave-induced damage

柴常春, 马振洋, 任兴荣, 杨银堂, 赵颖博, 于新海   

  1. School of Microelectronics, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • 收稿日期:2012-09-23 修回日期:2012-11-30 出版日期:2013-05-01 发布日期:2013-05-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 60776034).

Hardening measures for bipolar transistor against microwave-induced damage

Chai Chang-Chun (柴常春), Ma Zhen-Yang (马振洋), Ren Xing-Rong (任兴荣), Yang Yin-Tang (杨银堂), Zhao Ying-Bo (赵颖博), Yu Xin Hai (于新海)   

  1. School of Microelectronics, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • Received:2012-09-23 Revised:2012-11-30 Online:2013-05-01 Published:2013-05-01
  • Contact: Ma Zhen-Yang E-mail:zyma@mail.xidian.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 60776034).

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摘要： In the present paper we study the influences of the bias voltage and the external components on the damage progress of a bipolar transistor induced by high power microwave (HPM). The mechanism is presented by analyzing the variation of device internal distribution of the temperature. The findings show that the device becomes less vulnerable to damage with the increase of bias voltage. Both the series diode at the base and the relatively low series resistance at the emitter Re can make the burnout time of the device prolonged obviously. However, Re will aid the damage of the device when the value is sufficiently high due to the fact that the highest hot spot shifts from the base-emitter junction to the base region. Moreover, the series resistance at the base Rb will weaken the capability of the device to withstand microwave damage.

关键词: bipolar transistor, high power microwave, hardening measures

Abstract: In the present paper we study the influences of the bias voltage and the external components on the damage progress of a bipolar transistor induced by high power microwave (HPM). The mechanism is presented by analyzing the variation of device internal distribution of the temperature. The findings show that the device becomes less vulnerable to damage with the increase of bias voltage. Both the series diode at the base and the relatively low series resistance at the emitter Re can make the burnout time of the device prolonged obviously. However, Re will aid the damage of the device when the value is sufficiently high due to the fact that the highest hot spot shifts from the base-emitter junction to the base region. Moreover, the series resistance at the base Rb will weaken the capability of the device to withstand microwave damage.

Key words: bipolar transistor, high power microwave, hardening measures

中图分类号:  (Bipolar transistors)

  • 85.30.Pq
84.40.-x (Radiowave and microwave (including millimeter wave) technology)