Total ionizing dose effect in an input/output device for flash memory

doi:10.1088/1674-1056/20/12/120703

中国物理B ›› 2011, Vol. 20 ›› Issue (12): 120703-120703.doi: 10.1088/1674-1056/20/12/120703

Total ionizing dose effect in an input/output device for flash memory

张正选¹, 邵华¹, 毕大炜¹, 邹世昌¹, 刘张李², 胡志远², 陈明², 宁冰旭²

(1)The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; (2)The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, Chi

收稿日期:2011-05-03 修回日期:2011-06-22 出版日期:2011-12-15 发布日期:2011-12-15

Total ionizing dose effect in an input/output device for flash memory

Liu Zhang-Li(刘张李)^a)b)†, Hu Zhi-Yuan(胡志远)^a)b), Zhang Zheng-Xuan(张正选)^a), Shao Hua(邵华)^a), Chen Ming(陈明)^a)b), Bi Da-Wei(毕大炜)^a), Ning Bing-Xu(宁冰旭)^a)b), and Zou Shi-Chang(邹世昌)^a)

^a The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; ^b Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

Received:2011-05-03 Revised:2011-06-22 Online:2011-12-15 Published:2011-12-15

摘要/Abstract

摘要： Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we observed a larger increase of off-state leakage in the short channel device than in long one. However, a larger threshold voltage shift is observed for the narrow width device than for the wide one, which is well known as the radiation induced narrow channel effect. The radiation induced charge in the shallow trench isolation oxide influences the electric field of the narrow channel device. Also, the drain bias dependence of the off-state leakage after irradiation is observed, which is called the radiation enhanced drain induced barrier lowing effect. Finally, we found that substrate bias voltage can suppress the off-state leakage, while leading to more obvious hump effect.

关键词: input/output device, oxide trapped charge, radiation induced narrow channel effect, shallow trench isolation, total ionizing dose

Abstract: Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we observed a larger increase of off-state leakage in the short channel device than in long one. However, a larger threshold voltage shift is observed for the narrow width device than for the wide one, which is well known as the radiation induced narrow channel effect. The radiation induced charge in the shallow trench isolation oxide influences the electric field of the narrow channel device. Also, the drain bias dependence of the off-state leakage after irradiation is observed, which is called the radiation enhanced drain induced barrier lowing effect. Finally, we found that substrate bias voltage can suppress the off-state leakage, while leading to more obvious hump effect.

Key words: input/output device, oxide trapped charge, radiation induced narrow channel effect, shallow trench isolation, total ionizing dose

中图分类号: (Spaceborne and space research instruments, apparatus, and components (satellites, space vehicles, etc.))

07.87.+v

85.30.-z (Semiconductor devices)

刘张李, 胡志远, 张正选, 邵华, 陈明, 毕大炜, 宁冰旭, 邹世昌. Total ionizing dose effect in an input/output device for flash memory[J]. 中国物理B, 2011, 20(12): 120703-120703.

Liu Zhang-Li(刘张李), Hu Zhi-Yuan(胡志远), Zhang Zheng-Xuan(张正选), Shao Hua(邵华), Chen Ming(陈明), Bi Da-Wei(毕大炜), Ning Bing-Xu(宁冰旭), and Zou Shi-Chang(邹世昌) . Total ionizing dose effect in an input/output device for flash memory[J]. Chin. Phys. B, 2011, 20(12): 120703-120703.

参考文献 20

[1]	Saks N S, Ancona M G and Modolo J A 1984 IEEE Trans. Nucl. Sci. NS-31 1249
[2]	Saks N S, Ancona M G and Modolo J A 1986 IEEE Trans. Nucl. Sci. NS-33 1185
[3]	Barnaby H J 2006 IEEE Trans. Nucl. Sci. 53 3103
[4]	Esqueda I S, Barnaby H J and Alles M L 2005 IEEE Trans. Nucl. Sci. 52 2259
[5]	Barnaby H J, Mclain M and Esqueda I S 2007 Nucl. Instrum. Methods Phys. Res. Sect. B 261 1142
[6]	Faccio F, Barnaby H J, Chen X J, Fleetwood D M, Gonella L, Mclain M and Schrimpf R D 2008 Microelectron. Reliab. 48 1000
[7]	Nguyen D N, Lee C I and Johnston A H 1998 IEEE Radiation Effects Data Workshop Record Newport Beach, CA, USA p. 100
[8]	Nguyen D N, Guertin S M, Swift G M and Johnston A H 1999 IEEE Trans. Nucl. Sci. 46 1744
[9]	Mclain M, Barnaby H J, Holbert K E, Schrimpf R D, Shah H, Amort A, Baze M and Wert J 2007 IEEE Trans. Nucl. Sci. 54 2210
[10]	Faccio F and Cervelli G 2005 IEEE Trans. Nucl. Sci. 52 2413
[11]	Gonella L, Faccio F, Silvestri M, Gerardin S, Pantano D, Re V, Manghisoni M, Ratti L and Ranieri A 2007 Nucl. Instrum. Methods Phys. Res. Sect. A 582 750
[12]	Li D M, Wang Z H, Huangfu L Y and Gou Q J 2007 Chin. Phys. 16 3760
[13]	Wang S H, Lu Q, Wang W H, An X and Huang R 2010 Acta Phys. Sin. 59 1970 (in Chinese)
[14]	Liu Z L, Hu Z Y, Zhang Z X, Shao H, Chen M, Bi D W, Ning B X and Zou S C 2011 Chin. Phys. B 20 070701
[15]	Arora N 2007 Mosfet Modeling for VLSI Simulation: Theory and Practice (Singapore: World Scientific) pp. 84-86
[16]	Liu Z L, Hu Z Y, Zhang Z X, Shao H, Chen M, Bi D W, Ning B X and Zou S C 2010 Nucl. Instrum. Methods Phys. Res. Sect. B 268 3498
[17]	Youk G U, Khare P S, Schrimpf R D, Massengill L W and Galloway K F 1999 IEEE Trans. Nucl. Sci. 46 1830
[18]	Deen M J and Yan Z X 1990 IEEE Trans. Electron. Dev. 37 1707
[19]	Davis G E and Hughes H L 1982 IEEE Trans. Nucl. Sci. 29 1685
[20]	Neamen D A 2003 Semiconductor Physics and Devices: Basic Principles 3rd edn. (New York: McGraw-Hill) pp. 499, 500

Total ionizing dose effect in an input/output device for flash memory

Total ionizing dose effect in an input/output device for flash memory

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