Bias dependence of a deep submicron NMOSFET response to total dose irradiation

doi:10.1088/1674-1056/20/7/070701

中国物理B ›› 2011, Vol. 20 ›› Issue (7): 70701-070701.doi: 10.1088/1674-1056/20/7/070701

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

刘张李, 胡志远, 张正选, 邵华, 陈明, 毕大炜, 宁冰旭, 邹世昌

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

收稿日期:2010-10-29 修回日期:2010-12-09 出版日期:2011-07-15 发布日期:2011-07-15

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Liu Zhang-Li(刘张李)^a)b)†, Hu Zhi-Yuan(胡志远)^a)b), Zhang Zheng-Xuan(张正选)^a), Shao Hua(邵华)^a), Chen Ming(陈明)^a)b), Bi Da-Wei(毕大炜)^a), Ning Bing-Xu(宁冰旭)^a)b), and Zou Shi-Chang(邹世昌)^a)

^aState Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; ^b Graduate University of Chinese Academy of Sciences, Beijing 100039, China

Received:2010-10-29 Revised:2010-12-09 Online:2011-07-15 Published:2011-07-15

摘要/Abstract

摘要： Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions. The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed. The high electric fields at the corners are partly responsible for the subthreshold hump effect. Charge trapped in the isolation oxide, particularly at the Si/SiO₂ interface along the sidewalls of the trench oxide creates a leakage path, which becomes a dominant contributor to the off-state drain-to-source leakage current in the NMOSFET. Non-uniform charge distribution is introduced into a three-dimensional (3D) simulation. Good agreement between experimental and simulation results is demonstrated. We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.

关键词: bias condition, oxide trapped charge, shallow trench isolation, total ionizing dose

Abstract: Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions. The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed. The high electric fields at the corners are partly responsible for the subthreshold hump effect. Charge trapped in the isolation oxide, particularly at the Si/SiO₂ interface along the sidewalls of the trench oxide creates a leakage path, which becomes a dominant contributor to the off-state drain-to-source leakage current in the NMOSFET. Non-uniform charge distribution is introduced into a three-dimensional (3D) simulation. Good agreement between experimental and simulation results is demonstrated. We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.

Key words: bias condition, oxide trapped charge, shallow trench isolation, total ionizing dose

中图分类号: (Spaceborne and space research instruments, apparatus, and components (satellites, space vehicles, etc.))

07.87.+v

85.30.-z (Semiconductor devices)

刘张李, 胡志远, 张正选, 邵华, 陈明, 毕大炜, 宁冰旭, 邹世昌. Bias dependence of a deep submicron NMOSFET response to total dose irradiation[J]. 中国物理B, 2011, 20(7): 70701-070701.

Liu Zhang-Li(刘张李), Hu Zhi-Yuan(胡志远), Zhang Zheng-Xuan(张正选), Shao Hua(邵华), Chen Ming(陈明), Bi Da-Wei(毕大炜), Ning Bing-Xu(宁冰旭), and Zou Shi-Chang(邹世昌). Bias dependence of a deep submicron NMOSFET response to total dose irradiation[J]. Chin. Phys. B, 2011, 20(7): 70701-070701.

参考文献 20

[1]	Brady F T, Maimon J D and Hurt M J 1999 IEEE Trans. on Nucl. Sci. 46 1836
[2]	Lacoe R C, Osbom J V, Mayer D C, Brown S and Hunt D R 1998 IEEE Radiation Effects Data Workshop Newport Beach, USA, July 24, 1998 p. 104
[3]	Faccio F and Cervelli G 2005 IEEE Trans. on Nucl. Sci. 52 2413
[4]	Peters L 1999 Semiconductor International 22 69
[5]	Kerwin D B and Benedetto J M 1998 IEEE Radiation Effects Data Workshop Newport Beach, USA, July 24, 1998 p. 80
[6]	Wong J, Weil J, Whittin C, Yu C, Porth B and Hart J 2001 IEEE/SEMI Advanced Semiconductor Manufacturing Conference Munich, Germany, April 23—24, 2001 p. 85
[7]	McLain M, Barnaby H J, Holbert K E, Schrimpf R D, Shah H, Amort A, Baze M and Wert J 2007 IEEE Trans. on Nucl. Sci. 54 2210
[8]	Esqueda I S, Barnaby H J and Alles M L 2005 IEEE Trans. on Nucl. Sci. 52 2259
[9]	Hughes R C 1975 Appl. Phys. Lett. 26 436
[10]	Hughes R C 1973 Phys. Rev. Lett. 30 1333
[11]	Johnston A H, Swimm R T, Allen G R and Miyahira T F 2009 IEEE Trans. on Nucl. Sci. 56 1941
[12]	Turowski M, Raman A and Schrimpf R D 2004 IEEE Trans. on Nucl. Sci. 51 3166
[13]	Li D M, Wang Z H, Huangfu L Y and Gou Q J 2007 Chin. Phys. 16 3760
[14]	Meng Z Q, Hao Y, Tang Y, Ma X H, Zhu Z W and Li Y K 2007 Chin. J. Semiconductors 28 241 (in Chinese)
[15]	Zhang T Q, Liu C Y, Liu J L, Wang J P, Huang Z, Xu N J, He B P, Peng H L and Yao Y J 2001 Acta Phys. Sin. 50 2434 (in Chinese)
[16]	Wang S H, Lu Q, Wang W H, An X and Huang R 2010 Acta Phys. Sin. 59 1970 (in Chinese)
[17]	Chattejee A, Rodgers D, McKee J, Ali I, Nag S and Chen I C 1996 International Electron Devices Meeting San Francisco, USA, December 8—11, 1996 p. 829
[18]	Shaneyfelt M R, Dodd P E, Draper B L and Flores R S 1998 IEEE Trans. on Nucl. Sci. 45 2584
[19]	Schwank J R, Shaneyfelt M R, Fleetwood D M, Felix J A, Dodd P E, Paillet P and Ferlet-Vavrois V 2008 IEEE Trans. on Nucl. Sci. 55 1833
[20]	Barnaby H J 2006 IEEE Trans. on Nucl. Sci. 53 3103

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

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