中国物理B ›› 2017, Vol. 26 ›› Issue (3): 36103-036103.doi: 10.1088/1674-1056/26/3/036103
• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇 下一篇
Shuang Fan(樊双), Zhi-Yuan Hu(胡志远), Zheng-Xuan Zhang(张正选), Bing-Xu Ning(宁冰旭), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Meng-Ying Zhang(张梦映), Le-Qing Zhang(张乐情)
Shuang Fan(樊双)1,2, Zhi-Yuan Hu(胡志远)1, Zheng-Xuan Zhang(张正选)1, Bing-Xu Ning(宁冰旭)1, Da-Wei Bi(毕大炜)1, Li-Hua Dai(戴丽华)1,2, Meng-Ying Zhang(张梦映)1,2, Le-Qing Zhang(张乐情)1,2
摘要: Total ionizing dose induced single transistor latchup effects for 130 nm partially depleted silicon-on-insulator (PDSOI) NMOSFETs with the bodies floating were studied in this work. The latchup phenomenon strongly correlates with the bias configuration during irradiation. It is found that the high body doping concentration can make the devices less sensitive to the single transistor latchup effect, and the onset drain voltage at which latchup occurs can degrade as the total dose level rises. The mechanism of band-to-band tunneling (BBT) has been discussed. Two-dimensional simulations were conducted to evaluate the BBT effect. It is demonstrated that BBT combined with the positive trapped charge in the buried oxide (BOX) contributes a lot to the latchup effect.
中图分类号: (Radiation effects on specific materials)