Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices

doi:10.1088/1674-1056/ac9fc4

中国物理B ›› 2023, Vol. 32 ›› Issue (1): 18506-018506.doi: 10.1088/1674-1056/ac9fc4

Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices

Guangbao Lu(陆广宝)^1,2,†, Jun Liu(刘俊)^1,2,†, Chuanguo Zhang(张传国)¹, Yang Gao(高扬)^1,2, and Yonggang Li(李永钢)^1,2,‡

1 Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China;
2 University of Science and Technology of China, Hefei 230026, China

收稿日期:2022-08-26 修回日期:2022-10-31 接受日期:2022-11-03 出版日期:2022-12-08 发布日期:2022-12-08
通讯作者: Yonggang Li E-mail:ygli@theory.issp.ac.cn
基金资助:
Project supported by the Science Challenge Project of China (Grant No. TZ2018004), the National Natural Science Foundation of China (Grant Nos. 11975018 and 11775254), the National MCF Energy R&D Program of China (Grant No. 2018YEF0308100), and the outstanding member of Youth Innovation Promotion Association CAS (Grant No. Y202087).

Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices

Guangbao Lu(陆广宝)^1,2,†, Jun Liu(刘俊)^1,2,†, Chuanguo Zhang(张传国)¹, Yang Gao(高扬)^1,2, and Yonggang Li(李永钢)^1,2,‡

1 Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China;
2 University of Science and Technology of China, Hefei 230026, China

Received:2022-08-26 Revised:2022-10-31 Accepted:2022-11-03 Online:2022-12-08 Published:2022-12-08
Contact: Yonggang Li E-mail:ygli@theory.issp.ac.cn
Supported by:
Project supported by the Science Challenge Project of China (Grant No. TZ2018004), the National Natural Science Foundation of China (Grant Nos. 11975018 and 11775254), the National MCF Energy R&D Program of China (Grant No. 2018YEF0308100), and the outstanding member of Youth Innovation Promotion Association CAS (Grant No. Y202087).

摘要/Abstract

摘要： The total ionizing dose (TID) effect is a key cause for the degradation/failure of semiconductor device performance under energetic-particle irradiation. We developed a dynamic model of mobile particles and defects by solving the rate equations and Poisson's equation simultaneously, to understand threshold voltage shifts induced by TID in silicon-based metal-oxide-semiconductor (MOS) devices. The calculated charged defect distribution and corresponding electric field under different TIDs are consistent with experiments. TID changes the electric field at the Si/SiO₂ interface by inducing the accumulation of oxide charged defects nearby, thus shifting the threshold voltage accordingly. With increasing TID, the oxide charged defects increase to saturation, and the electric field increases following the universal 2/3 power law. Through analyzing the influence of TID on the interfacial electric field by different factors, we recommend that the radiation-hardened performance of devices can be improved by choosing a thin oxide layer with high permittivity and under high gate voltages.

关键词: dynamic modeling, total ionizing dose, threshold voltage shifts, radiation-hardening

Abstract: The total ionizing dose (TID) effect is a key cause for the degradation/failure of semiconductor device performance under energetic-particle irradiation. We developed a dynamic model of mobile particles and defects by solving the rate equations and Poisson's equation simultaneously, to understand threshold voltage shifts induced by TID in silicon-based metal-oxide-semiconductor (MOS) devices. The calculated charged defect distribution and corresponding electric field under different TIDs are consistent with experiments. TID changes the electric field at the Si/SiO₂ interface by inducing the accumulation of oxide charged defects nearby, thus shifting the threshold voltage accordingly. With increasing TID, the oxide charged defects increase to saturation, and the electric field increases following the universal 2/3 power law. Through analyzing the influence of TID on the interfacial electric field by different factors, we recommend that the radiation-hardened performance of devices can be improved by choosing a thin oxide layer with high permittivity and under high gate voltages.

Key words: dynamic modeling, total ionizing dose, threshold voltage shifts, radiation-hardening

中图分类号: (Semiconductor devices)

85.30.-z

85.30.De (Semiconductor-device characterization, design, and modeling) 24.10.-i (Nuclear reaction models and methods) 42.88.+h (Environmental and radiation effects on optical elements, devices, and systems)

Guangbao Lu(陆广宝), Jun Liu(刘俊), Chuanguo Zhang(张传国), Yang Gao(高扬), and Yonggang Li(李永钢). Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices[J]. 中国物理B, 2023, 32(1): 18506-018506.

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Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices

Dynamic modeling of total ionizing dose-induced threshold voltage shifts in MOS devices

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