中国物理B ›› 2016, Vol. 25 ›› Issue (9): 96110-096110.doi: 10.1088/1674-1056/25/9/096110

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Comparison of radiation degradation induced by x-rayand 3-MeV protons in 65-nm CMOS transistors

Lili Ding(丁李利), Simone Gerardin, Marta Bagatin, Dario Bisello, Serena Mattiazzo, Alessandro Paccagnella   

  1. 1. State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710072, China;
    2. RREACT group, Department of Information Engineering, Padova University, Italy;
    3. INFN, Padova, Italy
  • 收稿日期:2016-01-02 修回日期:2016-05-09 出版日期:2016-09-05 发布日期:2016-09-05
  • 通讯作者: Lili Ding E-mail:lili03.ding@126.com

Comparison of radiation degradation induced by x-rayand 3-MeV protons in 65-nm CMOS transistors

Lili Ding(丁李利)1,2,3, Simone Gerardin2,3, Marta Bagatin2, Dario Bisello2, Serena Mattiazzo2, Alessandro Paccagnella2,3   

  1. 1. State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710072, China;
    2. RREACT group, Department of Information Engineering, Padova University, Italy;
    3. INFN, Padova, Italy
  • Received:2016-01-02 Revised:2016-05-09 Online:2016-09-05 Published:2016-09-05
  • Contact: Lili Ding E-mail:lili03.ding@126.com

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摘要： The total ionizing dose (TID) response of 65-nm CMOS transistors is studied by 10-keV x-ray and 3-MeV protons up to 1 Grad (SiO2) total dose. The degradation levels induced by the two radiation sources are different to some extent. The main reason is the interface dose enhancement due to the thin gate oxide and the low energy photons. The holes' recombination also contributes to the difference. Compared to these two mechanisms, the influence of the dose rate is negligible.

关键词: total ionizing dose (TID) effects, grad dose, x-ray and protons, 65-nm CMOS transistors

Abstract: The total ionizing dose (TID) response of 65-nm CMOS transistors is studied by 10-keV x-ray and 3-MeV protons up to 1 Grad (SiO2) total dose. The degradation levels induced by the two radiation sources are different to some extent. The main reason is the interface dose enhancement due to the thin gate oxide and the low energy photons. The holes' recombination also contributes to the difference. Compared to these two mechanisms, the influence of the dose rate is negligible.

Key words: total ionizing dose (TID) effects, grad dose, x-ray and protons, 65-nm CMOS transistors

中图分类号:  (Physical radiation effects, radiation damage)

  • 61.80.-x
73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))