Impact of substrate bias on radiation-induced edge effects in MOSFETs

doi:10.1088/1674-1056/20/12/120702

中国物理B ›› 2011, Vol. 20 ›› Issue (12): 120702-120702.doi: 10.1088/1674-1056/20/12/120702

Impact of substrate bias on radiation-induced edge effects in MOSFETs

邵华¹, 张正选¹, 毕大炜¹, 邹世昌¹, 胡志远², 刘张李², 宁冰旭², 陈明²

(1)Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; (2)Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2011-04-19 修回日期:2011-06-21 出版日期:2011-12-15 发布日期:2011-12-15

Impact of substrate bias on radiation-induced edge effects in MOSFETs

Hu Zhi-Yuan(胡志远)^a)b)†,Liu Zhang-Li(刘张李)^a)b), Shao-Hua(邵华)^a),Zhang Zheng-Xuan(张正选)^a), Ning Bing-Xu(宁冰旭)^a)b), Chen Ming(陈明)^a)b), Bi Da-Wei(毕大炜)^a),and Zou Shi-Chang(邹世昌)^a)

^a Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; ^bGraduate University of the Chinese Academy of Sciences, Beijing 100049, China

Received:2011-04-19 Revised:2011-06-21 Online:2011-12-15 Published:2011-12-15

摘要/Abstract

摘要： This paper investigates the effects of gamma-ray irradiation on the Shallow-Trench Isolation (STI) leakage currents in 180-nm complementary metal oxide semiconductor technology. No hump effect in the subthreshold region is observed after irradiation, which is considered to be due to the thin STI corner oxide thickness. A negative substrate bias could effectively suppress the STI leakage, but it also impairs the device characteristics. The three-dimensional simulation is introduced to understand the impact of substrate bias. Moreover, we propose a simple method for extracting the best substrate bias value, which not only eliminates the STI leakage but also has the least impact on the device characteristics.

关键词: ionizing radiation, shallow trench isolation, trapped charge, total dose effects

Abstract: This paper investigates the effects of gamma-ray irradiation on the Shallow-Trench Isolation (STI) leakage currents in 180-nm complementary metal oxide semiconductor technology. No hump effect in the subthreshold region is observed after irradiation, which is considered to be due to the thin STI corner oxide thickness. A negative substrate bias could effectively suppress the STI leakage, but it also impairs the device characteristics. The three-dimensional simulation is introduced to understand the impact of substrate bias. Moreover, we propose a simple method for extracting the best substrate bias value, which not only eliminates the STI leakage but also has the least impact on the device characteristics.

Key words: ionizing radiation, shallow trench isolation, trapped charge, total dose effects

中图分类号:

07.80.+b

24.50.+g (Direct reactions)

胡志远, 刘张李, 邵华, 张正选, 宁冰旭, 陈明, 毕大炜, 邹世昌. Impact of substrate bias on radiation-induced edge effects in MOSFETs[J]. 中国物理B, 2011, 20(12): 120702-120702.

Hu Zhi-Yuan(胡志远), Liu Zhang-Li(刘张李), Shao-Hua(邵华), Zhang Zheng-Xuan(张正选), Ning Bing-Xu(宁冰旭), Chen Ming(陈明), Bi Da-Wei(毕大炜), and Zou Shi-Chang(邹世昌) . Impact of substrate bias on radiation-induced edge effects in MOSFETs[J]. Chin. Phys. B, 2011, 20(12): 120702-120702.

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Impact of substrate bias on radiation-induced edge effects in MOSFETs

Impact of substrate bias on radiation-induced edge effects in MOSFETs

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