Research on the radiation hardened SOI devices with single-step Si ion implantation

doi:10.1088/1674-1056/27/4/048503

中国物理B ›› 2018, Vol. 27 ›› Issue (4): 48503-048503.doi: 10.1088/1674-1056/27/4/048503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Research on the radiation hardened SOI devices with single-step Si ion implantation

Li-Hua Dai(戴丽华), Da-Wei Bi(毕大炜), Zhi-Yuan Hu(胡志远), Xiao-Nian Liu(刘小年), Meng-Ying Zhang(张梦映), Zheng-Xuan Zhang(张正选), Shi-Chang Zou(邹世昌)

1. University of Chinese Academy of Sciences, Beijing 100049, China;
2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

收稿日期:2017-11-07 修回日期:2017-12-22 出版日期:2018-04-05 发布日期:2018-04-05
通讯作者: Li-Hua Dai E-mail:dailihua@mail.sim.ac.cn

Research on the radiation hardened SOI devices with single-step Si ion implantation

Li-Hua Dai(戴丽华)^1,2, Da-Wei Bi(毕大炜)², Zhi-Yuan Hu(胡志远)², Xiao-Nian Liu(刘小年)^1,2, Meng-Ying Zhang(张梦映)^1,2, Zheng-Xuan Zhang(张正选)², Shi-Chang Zou(邹世昌)²

1. University of Chinese Academy of Sciences, Beijing 100049, China;
2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

Received:2017-11-07 Revised:2017-12-22 Online:2018-04-05 Published:2018-04-05
Contact: Li-Hua Dai E-mail:dailihua@mail.sim.ac.cn

摘要/Abstract

摘要：

Silicon-on-insulator (SOI) devices are sensitive to the total ionizing dose effect due to the existence of buried oxide. In this paper, an extra single-step Si ion implantation into buried oxide layer prior to the normal complementary metal-oxide-semiconductor transistor (CMOS) process is used to harden the SOI wafer. The top-Si quality of the hardened SOI wafer is confirmed to be good enough for device manufacturing through various characterization methods. The radiation experiments show that the total ionizing dose tolerance of the Si implanted SOI device is improved significantly. The metastable electron traps introduced by Si implantation is also investigated by electrical stress. The results show that these traps are very instable, and electrons will tunnel into or out of the metastable electron traps quickly after hot-electron-injection or hot-hole-injection.

关键词: silicon-on-insulator, total ionizing dose, Si ion implantation, metastable electron traps

Abstract:

Key words: silicon-on-insulator, total ionizing dose, Si ion implantation, metastable electron traps

中图分类号: (Field effect devices)

85.30.Tv

61.80.Ed (γ-ray effects) 85.40.Ry (Impurity doping, diffusion and ion implantation technology)

戴丽华, 毕大炜, 胡志远, 刘小年, 张梦映, 张正选, 邹世昌. Research on the radiation hardened SOI devices with single-step Si ion implantation[J]. 中国物理B, 2018, 27(4): 48503-048503.

Li-Hua Dai(戴丽华), Da-Wei Bi(毕大炜), Zhi-Yuan Hu(胡志远), Xiao-Nian Liu(刘小年), Meng-Ying Zhang(张梦映), Zheng-Xuan Zhang(张正选), Shi-Chang Zou(邹世昌). Research on the radiation hardened SOI devices with single-step Si ion implantation[J]. Chin. Phys. B, 2018, 27(4): 48503-048503.

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Research on the radiation hardened SOI devices with single-step Si ion implantation

Research on the radiation hardened SOI devices with single-step Si ion implantation

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