Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin

doi:10.1088/1674-1056/26/9/096103

中国物理B ›› 2017, Vol. 26 ›› Issue (9): 96103-096103.doi: 10.1088/1674-1056/26/9/096103

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin

Qiwen Zheng(郑齐文), Jiangwei Cui(崔江维), Mengxin Liu(刘梦新), Dandan Su(苏丹丹), Hang Zhou(周航), Teng Ma(马腾), Xuefeng Yu(余学峰), Wu Lu(陆妩), Qi Guo(郭旗), Fazhan Zhao(赵发展)

1 Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;
2 Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China;
4 Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences, Beijing 100049, China

收稿日期:2017-04-28 修回日期:2017-06-12 出版日期:2017-09-05 发布日期:2017-09-05
通讯作者: Fazhan Zhao E-mail:qiwinzheng@163.com,qwzheng@ms.xjb.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. U1532261 and 11605282) and the Opening Fund of Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences Research Projects (Grant No. KLSDTJJ2016-07).

Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin

Qiwen Zheng(郑齐文)^1,2, Jiangwei Cui(崔江维)^1,2, Mengxin Liu(刘梦新)⁴, Dandan Su(苏丹丹)^1,2,3, Hang Zhou(周航)^1,2,3, Teng Ma(马腾)^1,2,3, Xuefeng Yu(余学峰)^1,2, Wu Lu(陆妩)^1,2, Qi Guo(郭旗)^1,2, Fazhan Zhao(赵发展)⁴

1 Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;
2 Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China;
4 Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences, Beijing 100049, China

Received:2017-04-28 Revised:2017-06-12 Online:2017-09-05 Published:2017-09-05
Contact: Fazhan Zhao E-mail:qiwinzheng@163.com,qwzheng@ms.xjb.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. U1532261 and 11605282) and the Opening Fund of Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences Research Projects (Grant No. KLSDTJJ2016-07).

摘要/Abstract

摘要： In this work, the total ionizing dose (TID) effect on 130 nm partially depleted (PD) silicon-on-insulator (SOI) static random access memory (SRAM) cell stability is measured. The SRAM cell test structure allowing direct measurement of the static noise margin (SNM) is specifically designed and irradiated by gamma-ray. Both data sides' SNM of 130 nm PD SOI SRAM cell are decreased by TID, which is different from the conclusion obtained in old generation devices that one data side's SNM is decreased and the other data side's SNM is increased. Moreover, measurement of SNM under different supply voltages (V_dd) reveals that SNM is more sensitive to TID under lower V_dd. The impact of TID on SNM under data retention V_dd should be tested, because V_dd of SRAM cell under data retention mode is lower than normal V_dd. The mechanism under the above results is analyzed by measurement of I-V characteristics of SRAM cell transistors.

关键词: silicon-on-insulator, total ionizing dose, static random access memory, static noise margin

Abstract: In this work, the total ionizing dose (TID) effect on 130 nm partially depleted (PD) silicon-on-insulator (SOI) static random access memory (SRAM) cell stability is measured. The SRAM cell test structure allowing direct measurement of the static noise margin (SNM) is specifically designed and irradiated by gamma-ray. Both data sides' SNM of 130 nm PD SOI SRAM cell are decreased by TID, which is different from the conclusion obtained in old generation devices that one data side's SNM is decreased and the other data side's SNM is increased. Moreover, measurement of SNM under different supply voltages (V_dd) reveals that SNM is more sensitive to TID under lower V_dd. The impact of TID on SNM under data retention V_dd should be tested, because V_dd of SRAM cell under data retention mode is lower than normal V_dd. The mechanism under the above results is analyzed by measurement of I-V characteristics of SRAM cell transistors.

Key words: silicon-on-insulator, total ionizing dose, static random access memory, static noise margin

中图分类号: (γ-ray effects)

61.80.Ed

61.82.Fk (Semiconductors) 85.30.Tv (Field effect devices) 07.85.-m (X- and γ-ray instruments)

郑齐文, 崔江维, 刘梦新, 苏丹丹, 周航, 马腾, 余学峰, 陆妩, 郭旗, 赵发展. Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin[J]. 中国物理B, 2017, 26(9): 96103-096103.

Qiwen Zheng(郑齐文), Jiangwei Cui(崔江维), Mengxin Liu(刘梦新), Dandan Su(苏丹丹), Hang Zhou(周航), Teng Ma(马腾), Xuefeng Yu(余学峰), Wu Lu(陆妩), Qi Guo(郭旗), Fazhan Zhao(赵发展). Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin[J]. Chin. Phys. B, 2017, 26(9): 96103-096103.

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Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin

Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin

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