中国物理B ›› 2011, Vol. 20 ›› Issue (12): 120702-120702.doi: 10.1088/1674-1056/20/12/120702

• • 上一篇    下一篇

Impact of substrate bias on radiation-induced edge effects in MOSFETs

邵华1, 张正选1, 毕大炜1, 邹世昌1, 胡志远2, 刘张李2, 宁冰旭2, 陈明2   

  1. (1)Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; (2)Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2011-04-19 修回日期:2011-06-21 出版日期:2011-12-15 发布日期:2011-12-15

Impact of substrate bias on radiation-induced edge effects in MOSFETs

Hu Zhi-Yuan(胡志远)a)b)†,Liu Zhang-Li(刘张李)a)b), Shao-Hua(邵华)a),Zhang Zheng-Xuan(张正选)a), Ning Bing-Xu(宁冰旭)a)b), Chen Ming(陈明)a)b), Bi Da-Wei(毕大炜)a),and Zou Shi-Chang(邹世昌)a)   

  1. a Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
  • Received:2011-04-19 Revised:2011-06-21 Online:2011-12-15 Published:2011-12-15

摘要: This paper investigates the effects of gamma-ray irradiation on the Shallow-Trench Isolation (STI) leakage currents in 180-nm complementary metal oxide semiconductor technology. No hump effect in the subthreshold region is observed after irradiation, which is considered to be due to the thin STI corner oxide thickness. A negative substrate bias could effectively suppress the STI leakage, but it also impairs the device characteristics. The three-dimensional simulation is introduced to understand the impact of substrate bias. Moreover, we propose a simple method for extracting the best substrate bias value, which not only eliminates the STI leakage but also has the least impact on the device characteristics.

关键词: ionizing radiation, shallow trench isolation, trapped charge, total dose effects

Abstract: This paper investigates the effects of gamma-ray irradiation on the Shallow-Trench Isolation (STI) leakage currents in 180-nm complementary metal oxide semiconductor technology. No hump effect in the subthreshold region is observed after irradiation, which is considered to be due to the thin STI corner oxide thickness. A negative substrate bias could effectively suppress the STI leakage, but it also impairs the device characteristics. The three-dimensional simulation is introduced to understand the impact of substrate bias. Moreover, we propose a simple method for extracting the best substrate bias value, which not only eliminates the STI leakage but also has the least impact on the device characteristics.

Key words: ionizing radiation, shallow trench isolation, trapped charge, total dose effects

中图分类号: 

  • 07.80.+b
24.50.+g (Direct reactions)