中国物理B ›› 2011, Vol. 20 ›› Issue (12): 120702-120702.doi: 10.1088/1674-1056/20/12/120702
邵华1, 张正选1, 毕大炜1, 邹世昌1, 胡志远2, 刘张李2, 宁冰旭2, 陈明2
Hu Zhi-Yuan(胡志远)a)b)†,Liu Zhang-Li(刘张李)a)b), Shao-Hua(邵华)a),Zhang Zheng-Xuan(张正选)a), Ning Bing-Xu(宁冰旭)a)b), Chen Ming(陈明)a)b), Bi Da-Wei(毕大炜)a),and Zou Shi-Chang(邹世昌)a)
摘要: This paper investigates the effects of gamma-ray irradiation on the Shallow-Trench Isolation (STI) leakage currents in 180-nm complementary metal oxide semiconductor technology. No hump effect in the subthreshold region is observed after irradiation, which is considered to be due to the thin STI corner oxide thickness. A negative substrate bias could effectively suppress the STI leakage, but it also impairs the device characteristics. The three-dimensional simulation is introduced to understand the impact of substrate bias. Moreover, we propose a simple method for extracting the best substrate bias value, which not only eliminates the STI leakage but also has the least impact on the device characteristics.
中图分类号: