Influences of total ionizing dose on single event effect sensitivity in floating gate cells

doi:10.1088/1674-1056/27/8/086103

中国物理B ›› 2018, Vol. 27 ›› Issue (8): 86103-086103.doi: 10.1088/1674-1056/27/8/086103

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Influences of total ionizing dose on single event effect sensitivity in floating gate cells

Ya-Nan Yin(殷亚楠), Jie Liu(刘杰), Qing-Gang Ji(姬庆刚), Pei-Xiong Zhao(赵培雄), Tian-Qi Liu(刘天奇), Bing Ye(叶兵), Jie Luo(罗捷), You-Mei Sun(孙友梅), Ming-Dong Hou(侯明东)

1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Lanzhou University, Lanzhou 730000, China

收稿日期:2018-02-26 修回日期:2018-05-04 出版日期:2018-08-05 发布日期:2018-08-05
通讯作者: Jie Liu E-mail:j.liu@impcas.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11690041, 11675233, U1532261, and 11505243).

Influences of total ionizing dose on single event effect sensitivity in floating gate cells

Ya-Nan Yin(殷亚楠)^1,2, Jie Liu(刘杰)¹, Qing-Gang Ji(姬庆刚)^1,2, Pei-Xiong Zhao(赵培雄)^1,2, Tian-Qi Liu(刘天奇)^1,2,3, Bing Ye(叶兵)¹, Jie Luo(罗捷)^1,2,3, You-Mei Sun(孙友梅)¹, Ming-Dong Hou(侯明东)¹

1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Lanzhou University, Lanzhou 730000, China

Received:2018-02-26 Revised:2018-05-04 Online:2018-08-05 Published:2018-08-05
Contact: Jie Liu E-mail:j.liu@impcas.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11690041, 11675233, U1532261, and 11505243).

摘要/Abstract

摘要： The influences of total ionizing dose (TID) on the single event effect (SEE) sensitivity of 34-nm and 25-nm NAND flash memories are investigated in this paper. The increase in the cross section of heavy-ion single event upset (SEU) in memories that have ever been exposed to TID is observed, which is attributed to the combination of the threshold voltage shifts induced by γ-rays and heavy ions. Retention errors in floating gate (FG) cells after heavy ion irradiation are observed. Moreover, the cross section of retention error increases if the memory has ever been exposed to TID. This effect is more evident at a low linear energy transfer (LET) value. The underlying mechanism is identified as the combination of the defects induced by γ-rays and heavy ions, which increases the possibility to constitute a multi-trap assisted tunneling (m-TAT) path across the tunnel oxide.

关键词: flash memories, heavy ions, synergistic effect, total ionizing dose

Abstract: The influences of total ionizing dose (TID) on the single event effect (SEE) sensitivity of 34-nm and 25-nm NAND flash memories are investigated in this paper. The increase in the cross section of heavy-ion single event upset (SEU) in memories that have ever been exposed to TID is observed, which is attributed to the combination of the threshold voltage shifts induced by γ-rays and heavy ions. Retention errors in floating gate (FG) cells after heavy ion irradiation are observed. Moreover, the cross section of retention error increases if the memory has ever been exposed to TID. This effect is more evident at a low linear energy transfer (LET) value. The underlying mechanism is identified as the combination of the defects induced by γ-rays and heavy ions, which increases the possibility to constitute a multi-trap assisted tunneling (m-TAT) path across the tunnel oxide.

Key words: flash memories, heavy ions, synergistic effect, total ionizing dose

中图分类号: (Semiconductors)

61.82.Fk

61.80.Jh (Ion radiation effects) 61.80.Ed (γ-ray effects)

殷亚楠, 刘杰, 姬庆刚, 赵培雄, 刘天奇, 叶兵, 罗捷, 孙友梅, 侯明东. Influences of total ionizing dose on single event effect sensitivity in floating gate cells[J]. 中国物理B, 2018, 27(8): 86103-086103.

Ya-Nan Yin(殷亚楠), Jie Liu(刘杰), Qing-Gang Ji(姬庆刚), Pei-Xiong Zhao(赵培雄), Tian-Qi Liu(刘天奇), Bing Ye(叶兵), Jie Luo(罗捷), You-Mei Sun(孙友梅), Ming-Dong Hou(侯明东). Influences of total ionizing dose on single event effect sensitivity in floating gate cells[J]. Chin. Phys. B, 2018, 27(8): 86103-086103.

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Influences of total ionizing dose on single event effect sensitivity in floating gate cells

Influences of total ionizing dose on single event effect sensitivity in floating gate cells

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