Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET

doi:10.1088/1674-1056/23/11/117304

中国物理B ›› 2014, Vol. 23 ›› Issue (11): 117304-117304.doi: 10.1088/1674-1056/23/11/117304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET

梁斌, 陈建军, 池雅庆

School of Computer Science, National University of Defense Technology, Changsha 410073, China

收稿日期:2014-04-07 修回日期:2014-06-05 出版日期:2014-11-15 发布日期:2014-11-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61376109) and the Opening Project of National Key Laboratory of Science and Technology on Reliability Physics and Application Technology of Electrical Component, China (Grant No. ZHD201202).

Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET

Liang Bin (梁斌), Chen Jian-Jun (陈建军), Chi Ya-Qing (池雅庆)

School of Computer Science, National University of Defense Technology, Changsha 410073, China

Received:2014-04-07 Revised:2014-06-05 Online:2014-11-15 Published:2014-11-15
Contact: Chen Jian-Jun E-mail:cjj192000@yahoo.com.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61376109) and the Opening Project of National Key Laboratory of Science and Technology on Reliability Physics and Application Technology of Electrical Component, China (Grant No. ZHD201202).

摘要/Abstract

摘要：

Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentionally injected into the oxide layer to analyze the role of hot electron in hot carrier degradation. The enhanced degradation and the decreased time exponent appear with the injected hot electrons increasing, the degradation increases from 21.80% to 62.00% and the time exponent decreases from 0.59 to 0.27 with V_b decreasing from 0 V to -4 V, at the same time, the recovery also becomes remarkable and which strongly depends on the post stress gate bias V_g. Based on the experimental results, more unrecovered interface traps are created by the additional injected hot electron from the breaking Si-H bond, but the oxide trapped negative charges do not increase after a rapid recovery.

关键词: substrate hot electron injection, hot carrier injection (HCI) degradation, interface trap, oxide trapped charge

Abstract:

Key words: substrate hot electron injection, hot carrier injection (HCI) degradation, interface trap, oxide trapped charge

中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

73.40.Qv

85.30.Tv (Field effect devices)

梁斌, 陈建军, 池雅庆. Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET[J]. 中国物理B, 2014, 23(11): 117304-117304.

Liang Bin (梁斌), Chen Jian-Jun (陈建军), Chi Ya-Qing (池雅庆). Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET[J]. Chin. Phys. B, 2014, 23(11): 117304-117304.

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Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET

Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET

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