中国物理B ›› 2011, Vol. 20 ›› Issue (2): 27101-027101.doi: 10.1088/1674-1056/20/2/027101
胡盛东1, 张波2, 李肇基2, 吴丽娟3
Wu Li-Juan(吴丽娟)a)b)†, Hu Sheng-Dong(胡盛东)c), Zhang Bo(张波)a), and Li Zhao-Ji(李肇基)a)
摘要: This paper presents a novel high-voltage lateral double diffused metal--oxide semiconductor (LDMOS) with self-adaptive interface charge (SAC) layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer (EI) and increase breakdown voltage (BV). The BV and EI of SAC LDMOS increase to 612 V and 600 V/μm from 204 V and 90.7 V/μm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of η which present the enhanced ability of interface charge on EI are defined and analysed.
中图分类号: (Theories and models of many-electron systems)