中国物理B ›› 2011, Vol. 20 ›› Issue (2): 27101-027101.doi: 10.1088/1674-1056/20/2/027101

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Novel high-voltage power device based on self-adaptive interface charge

胡盛东1, 张波2, 李肇基2, 吴丽娟3   

  1. (1)College of Communication Engineering, Chongqing University, Chongqing 400044, China; (2)State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; (3)State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; College of Communication Engineering, Chengdu University of Information Technology, Chengdu 610225, Chin
  • 收稿日期:2010-08-26 修回日期:2010-09-19 出版日期:2011-02-15 发布日期:2011-02-15
  • 基金资助:
    Projects supported by the National Natural Science Foundation of China (Grant Nos. 60806025 and 60976060), the National Laboratory of Analog Integrated Circuit (Grant No. 9140C0903070904), and the Youth Teacher Foundation of the University of Electronic Science and Technology of China (Grant No. jx0721).

Novel high-voltage power device based on self-adaptive interface charge

Wu Li-Juan(吴丽娟)a)b)†, Hu Sheng-Dong(胡盛东)c), Zhang Bo(张波)a), and Li Zhao-Ji(李肇基)a)   

  1. a State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China; b College of Communication Engineering, Chengdu University of Information Technology, Chengdu 610225, China; c College of Communication Engineering, Chongqing University, Chongqing 400044, China
  • Received:2010-08-26 Revised:2010-09-19 Online:2011-02-15 Published:2011-02-15
  • Supported by:
    Projects supported by the National Natural Science Foundation of China (Grant Nos. 60806025 and 60976060), the National Laboratory of Analog Integrated Circuit (Grant No. 9140C0903070904), and the Youth Teacher Foundation of the University of Electronic Science and Technology of China (Grant No. jx0721).

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摘要： This paper presents a novel high-voltage lateral double diffused metal--oxide semiconductor (LDMOS) with self-adaptive interface charge (SAC) layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer (EI) and increase breakdown voltage (BV). The BV and EI of SAC LDMOS increase to 612 V and 600 V/μm from 204 V and 90.7 V/μm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of η which present the enhanced ability of interface charge on EI are defined and analysed.

关键词: self-adaptive interface charge, inversion holes, dielectric layer electric field, breakdown voltage

Abstract: This paper presents a novel high-voltage lateral double diffused metal–oxide semiconductor (LDMOS) with self-adaptive interface charge (SAC) layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer (EI) and increase breakdown voltage (BV). The BV and EI of SAC LDMOS increase to 612 V and 600 V/μm from 204 V and 90.7 V/μm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of η which present the enhanced ability of interface charge on EI are defined and analysed.

Key words: self-adaptive interface charge, inversion holes, dielectric layer electric field, breakdown voltage

中图分类号:  (Theories and models of many-electron systems)

  • 71.10.-w
73.20.-r (Electron states at surfaces and interfaces) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))