中国物理B ›› 2011, Vol. 20 ›› Issue (10): 107101-107101.doi: 10.1088/1674-1056/20/10/107101
胡盛东1, 罗小蓉2, 张波2, 李肇基2, 吴丽娟3
Wu Li-Juan(吴丽娟)a)b)† , Hu Sheng-Dong(胡盛东) c), Luo Xiao-Rong(罗小蓉)a), Zhang Bo(张波)a), and Li Zhao-Ji(李肇基) a)
摘要: A new partial SOI (silion-on-insulator) (PSOI) high voltage P-channel LDMOS (lateral double-diffused metal-oxide semiconductor) with an interface hole islands (HI) layer is proposed and its breakdown characteristics are investigated theoretically. A high concentration of charges accumulate on the interface, whose density changes with the negative drain voltage, which increase the electric field (EI) in the dielectric buried oxide layer (BOX) and modulate the electric field in drift region . This results in the enhancement of the breakdown voltage (BV). The values of EI and BV of an HI PSOI with a 2-μm thick SOI layer over a 1-μm thick buried layer are 580V/μm and -582 V, respectively, compared with 81.5 V/μm and -123 V of a conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect (SHE). Moreover, in comparison with the conventional device, the proposed device exhibits low on-resistance.
中图分类号: (Theories and models of many-electron systems)