中国物理B ›› 2011, Vol. 20 ›› Issue (10): 106801-106801.doi: 10.1088/1674-1056/20/10/106801

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Effects of V/III ratio on the growth of a-plane GaN films

谢自力, 李弋, 刘斌, 张荣, 修向前, 陈鹏, 郑有炓   

  1. Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China
  • 收稿日期:2010-11-24 修回日期:2011-05-28 出版日期:2011-10-15 发布日期:2011-10-15
  • 基金资助:
    Project supported by the Special Funds for Major State Basic Research Project of China (Grant No. 2011CB301900), High Technology Research Program of China (Grant No. 2009AA03A198), the National Natural Science Foundation of China (Grant Nos. 60990311, 60721063, 60906025, 60936004, 60731160628, and 60820106003), the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK2008019, BK2010385, BK2009255, and BK2010178), and the Research Funds from NJUYangzhou Institute of Opto-electronics, China.

Effects of V/III ratio on the growth of a-plane GaN films

Xie Zi-Li(谢自力)†, Li Yi(李弋), Liu Bin(刘斌), Zhang Rong(张荣), Xiu Xiang-Qian(修向前), Chen Peng(陈鹏), and Zheng You-Liao(郑有炓)   

  1. Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronics Science and Engineering, Nanjing University, Nanjing 210093, China
  • Received:2010-11-24 Revised:2011-05-28 Online:2011-10-15 Published:2011-10-15
  • Supported by:
    Project supported by the Special Funds for Major State Basic Research Project of China (Grant No. 2011CB301900), High Technology Research Program of China (Grant No. 2009AA03A198), the National Natural Science Foundation of China (Grant Nos. 60990311, 60721063, 60906025, 60936004, 60731160628, and 60820106003), the Natural Science Foundation of Jiangsu Province of China (Grant Nos. BK2008019, BK2010385, BK2009255, and BK2010178), and the Research Funds from NJUYangzhou Institute of Opto-electronics, China.

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摘要： The non-polar a-plane GaN is grown on an r-plane sapphire substrate directly without a buffer layer by metal-organic chemical vapour deposition and the effects of V/III ratio growth conditions are investigated. Atomic force microscopy results show that triangular pits are formed at a relatively high V/III ratio, while a relatively low V/III ratio can enhance the lateral growth rate along the c-axis direction. The higher V/III ratio leads to a high density of pits in comparison with the lower V/III ratio. The surface morphology is improved greatly by using a low V/III ratio of 500 and the roughness mean square of the surface is only 3.9 nm. The high resolution X-ray diffraction characterized crystal structural results show that the rocking curve full width at half maximum along the m axis decreases from 0.757° to 0.720°, while along the c axis increases from 0.220° to 0.251° with the V/III increasing from 500 μmol/min to 2000 μmol/min, which indicates that a relatively low V/III ratio is conducible to the c-axis growth of a-plane GaN.

Abstract: The non-polar a-plane GaN is grown on an r-plane sapphire substrate directly without a buffer layer by metal-organic chemical vapour deposition and the effects of V/III ratio growth conditions are investigated. Atomic force microscopy results show that triangular pits are formed at a relatively high V/III ratio, while a relatively low V/III ratio can enhance the lateral growth rate along the c-axis direction. The higher V/III ratio leads to a high density of pits in comparison with the lower V/III ratio. The surface morphology is improved greatly by using a low V/III ratio of 500 and the roughness mean square of the surface is only 3.9 nm. The high resolution X-ray diffraction characterized crystal structural results show that the rocking curve full width at half maximum along the m axis decreases from 0.757° to 0.720°, while along the c axis increases from 0.220° to 0.251° with the V/III increasing from 500 μmol/min to 2000 μmol/min, which indicates that a relatively low V/III ratio is conducible to the c-axis growth of a-plane GaN.

Key words: V/III ratio, a-plane GaN, non-polar, metal-organic chemical vapour deposition

中图分类号:  (Diffusion of adsorbates, kinetics of coarsening and aggregation)

  • 68.43.Jk
66.30.H- (Self-diffusion and ionic conduction in nonmetals) 68.37.Hk (Scanning electron microscopy (SEM) (including EBIC)) 68.55.A- (Nucleation and growth)